MITSUBISHI RD12MVS1_10

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD12MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
0.2+/-0.05
(0.22)
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
2.0+/-0.05
High Power Gain:
Pout>11.5W, Gp>[email protected]=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
2
3.5+/-0.05
FEATURES
1.0+/-0.05
4.9+/-0.15
1
INDEX MARK
(Gate)
0.2+/-0.05
For output stage of high power amplifiers in
VHF band mobile radio sets.
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
0.9+/-0.1
APPLICATION
(0.25)
(0.22)
3
(0.25)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
VGS=0V
VDS=0V
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
Zg=Zl=50Ω
Tc=25°C
Junction to Case
UNIT
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Load VSWR tolerance
MIN.
1.8
11.5
55
LIMITS
TYP. MAX.
10
1
4.4
12
57
Not destroy
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
17 Aug 2010
1/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD12MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
CHANNEL DISSIPATION Pch(W)
...
60
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
50
8
Ids(A),GM(S)
40
On PCB(*1) with Heat-sink
30
On PCB(*1)
with throgh hole
and Heat-sink
20
Ids
6
4
GM
2
10
0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
0
Vds-Ids CHARACTERISTICS
3
4
Vgs(V)
5
6
7
160
Ta=+25°C
Vgs=7.5V
8
120
Vgs=6.0V
Ciss(pF)
6
5
Vgs=5.5V
4
Vgs=5.0V
3
Ta=+25°C
f=1MHz
140
7
Ids(A)
2
Vds VS. Ciss CHARACTERISTICS
9
Vgs=4.5V
100
80
60
2
Vgs=4.0V
40
1
Vgs=3.5V
20
0
0
0
2
4
6
Vds(V)
8
10
0
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
180
20
Ta=+25°C
f=1MHz
160
Ta=+25°C
f=1MHz
18
16
140
14
Crss(pF)
120
Coss(pF)
1
100
80
60
12
10
8
6
40
4
20
2
0
0
0
5
10
Vds(V)
15
20
0
RD12MVS1
5
10
Vds(V)
15
20
17 Aug 2010
2/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD12MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175M Hz
14
80
ηd
30
60
Gp
20
40
10
20
0
5
10
15
Pin(dBm)
20
25
50
4
30
0
Ids(A),GM(S)
2
5
1
Idd(A)
Po(W)
10
10
-25°C
+75°C
4
2
0
0
8
V dd(V )
20
1000
6
Idd
3
6
800
+25°C
V ds=10V
Tc=-25~+75°C
4
0
400
600
Pin(mW)
8
Po
15
200
V gs -Ids CHARACTORISTICS 2
5
4
40
Idd
0
30
25
20
60
6
V dd-Po CHARACTERISTICS @f=175M Hz
Ta=25°C
f=175MHz
Pin=0.3W
Icq =700mA
Zg=ZI=50 ohm
70
2
0
0
ηd
8
80
Ta=25°C
f=175MHz
Vdd=7.2V
Idq =1.0A
10
Idd
-5
90
Po
12
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
40
Po
Pout(W) , Idd(A)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
ηd(%)
Pin-Po CHARACTERISTICS @f=175M Hz
0
12
RD12MVS1
2
4
V gs(V )
6
8
17 Aug 2010
3/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD12MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
Vdd
Vgg
C2
C3
C1
W
47pF
RF-in
35mm
W
Contact
3.5mm
4.7kΩ
3mm
L1
10.8nH
330pF
100pF
4mm
Contact
3.5mm 6.0mm 5.0mm
20mm
12mm
15pF
L2
43.7nH
RD12MVS1
24pF
33pF
RF-out
25mm 330pF
68pF
Note: Board material - Teflon substrate
L: Enameled wire
Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm L1:4Turns,D:0.43mm,φ1.66mm(outside diameter)
W: line width=1.0mm
L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)
Chip Condencer :GRM40
C1, C2: 1000pF
Copper board spring t=0.1mm
C3: 10uF, 50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
f=175MHz Zin*
RD12MVS1
17 Aug 2010
4/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD12MVS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
25
50
75
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
(mag)
0.824
0.816
0.817
0.829
0.837
0.845
0.852
0.860
0.870
0.876
0.886
0.891
0.902
0.903
0.909
0.907
0.912
0.923
0.928
0.934
0.932
0.936
0.932
0.935
0.939
0.939
0.943
0.945
0.943
0.939
0.943
0.948
0.951
0.953
0.952
0.954
0.944
0.951
0.954
0.955
(ang)
-159.3
-169.0
-171.7
-172.8
-173.4
-173.9
-174.0
-174.3
-175.0
-175.0
-175.6
-175.8
-175.9
-176.2
-176.7
-177.6
-177.9
-178.3
-178.5
-178.6
-178.8
-179.2
179.6
179.1
179.2
179.4
179.1
178.7
177.5
177.2
176.9
176.8
177.1
176.7
176.1
175.4
174.4
174.6
175.0
175.0
S21
(mag)
(ang)
26.397
93.4
13.193
85.2
8.716
79.3
6.537
74.5
5.110
68.5
4.117
64.2
3.402
60.8
2.896
57.2
2.525
53.2
2.175
48.9
1.897
46.5
1.675
43.6
1.496
41.0
1.348
38.3
1.208
35.7
1.087
33.7
0.996
31.6
0.912
29.7
0.836
27.9
0.748
25.8
0.707
23.6
0.647
23.2
0.591
20.8
0.562
20.0
0.520
17.4
0.485
15.5
0.460
15.6
0.435
15.5
0.407
13.3
0.380
12.2
0.358
10.8
0.327
8.6
0.308
8.0
0.314
8.5
0.284
7.0
0.269
9.7
0.254
6.7
0.250
6.0
0.232
1.9
0.227
7.8
RD12MVS1
S12
(mag)
0.018
0.016
0.016
0.016
0.016
0.015
0.016
0.012
0.014
0.013
0.012
0.012
0.014
0.012
0.009
0.009
0.009
0.004
0.008
0.007
0.005
0.006
0.004
0.003
0.003
0.003
0.003
0.002
0.004
0.001
0.004
0.002
0.003
0.003
0.006
0.003
0.007
0.006
0.003
0.003
S22
(ang)
-3.3
1.4
-10.9
-14.1
-18.2
-18.3
-15.1
-30.4
-29.9
-24.5
-39.4
-53.1
-32.9
-32.2
-29.2
-21.6
-32.5
-37.2
-25.9
-21.3
-46.6
-25.0
-40.9
-33.6
17.7
25.4
51.4
5.7
5.6
-16.1
58.8
-6.7
40.4
77.0
46.5
64.5
60.3
69.7
80.3
86.7
(mag)
0.761
0.765
0.778
0.787
0.800
0.796
0.810
0.836
0.858
0.855
0.859
0.860
0.886
0.898
0.898
0.893
0.903
0.910
0.917
0.925
0.922
0.922
0.939
0.939
0.938
0.930
0.932
0.946
0.949
0.940
0.935
0.943
0.945
0.948
0.946
0.950
0.946
0.952
0.959
0.950
(ang)
-160.3
-168.1
-170.7
-170.3
-171.7
-172.3
-172.3
-172.2
-172.2
-173.0
-173.3
-173.4
-174.5
-174.6
-175.0
-175.6
-175.7
-176.6
-176.8
-177.3
-177.6
-177.6
-178.0
-178.9
-179.3
-179.5
-179.9
-179.9
179.3
179.0
178.8
178.2
177.5
176.8
176.7
176.7
176.0
175.7
175.0
174.8
17 Aug 2010
5/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to arise
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters for
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact to
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RD12MVS1
17 Aug 2010
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
rights, belonging to Mitsubishi Electric Corporation or a third party.
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in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these
materials.
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information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric
Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information
before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical
errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
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under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
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RD12MVS1
17 Aug 2010
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