VSK.170PbF, .250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A FEATURES • • • • • • • • • High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT DESCRIPTION MAGN-A-PAKTM This new VSK series of MAGN-A-PAKTM modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 170/250 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) VSK.170.. 85 °C 170 250 377 555 50 Hz 5100 8500 60 Hz 5350 8900 50 Hz 131 361 60 Hz 119 330 1310 3610 IT(RMS) ITSM I2 t I2√t VDRM/VRRM TJ VSK.250.. UNITS A kA2s kA2√s Up to 1600 V - 40 to 130 °C Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 VSK.170VSK.250- Document Number: 94417 Revision: 22-Apr-08 For technical questions, contact: [email protected] IRRM/IDRM AT 130 °C MAXIMUM mA 50 www.vishay.com 1 VSK.170PbF, .250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle on-state non-repetitive, surge current ITSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2√t for fusing 250 A 85 85 °C 377 555 5100 8500 5350 8900 4300 7150 4500 7500 131 361 119 330 92.5 255 84.4 233 t = 0.1 to 10 ms, no voltage reapplied 1310 3610 No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied No voltage reapplied t = 8.3 ms t = 10 ms Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms I2√t 170 t = 10 ms t = 10 ms I2 t VSK.250 As AC switch t = 8.3 ms Maximum I2t for fusing VSK.170 Low level value or threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.89 0.97 High level value of threshold voltage VT(TO)2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.12 1.00 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.34 0.60 High level value on-state slope resistance rt2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.96 0.57 ITM = π x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.44 IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500 IL Anode supply = 12 V, resistive load = 1 Ω, gate pulse: 10 V, 100 µs, TJ = 25 °C 1000 1000 VSK.170 VSK.250 Maximum on-state voltage drop Maximum holding current Maximum latching current VTM UNITS A kA2s kA2√s V mΩ V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/µs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/µs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω UNITS 1.0 2.0 µs 50 - 150 BLOCKING PARAMETER Maximum peak reverse and off-state leakage current SYMBOL IRRM, IDRM TEST CONDITIONS TJ = TJ maximum VSK.170 VSK.250 50 UNITS mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/µs www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94417 Revision: 22-Apr-08 VSK.170PbF, .250PbF Series SCR/SCR and SCR/Diode Vishay High Power Products TM (MAGN-A-PAK Power Modules), 170/250 A TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 PGM tp ≤ 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp ≤ 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp ≤ 5 ms, TJ = TJ maximum 5.0 TJ = - 40 °C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger VGT Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C W A V 3.0 TJ = TJ maximum UNITS 2.0 350 TJ = - 40 °C Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C mA 200 Maximum required DC gate current to trigger IGT TJ = TJ maximum 100 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/µs Maximum rate of rise of turned-on current THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS VSK.170 VSK.250 TJ - 40 to 130 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.17 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 0.02 UNITS °C K/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight 4 to 6 Nm 500 g 17.8 oz. Case style MAGN-A-PAK ΔR CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94417 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 VSK.170PbF, .250PbF Series Maximum Allowable Case Temperature (°C) 130 SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A VSK.170.. Series RthJC (DC) = 0.17 K/W 120 110 Conduction Angle 100 90 30° 80 60° 90° 120° 70 180° 60 0 40 80 120 160 200 Maximum Average On-state Power Loss (W) Vishay High Power Products 350 DC 180° 120° 90° 60° 30° 300 250 200 RMS Limit 150 Conduction Period 100 VSK.170.. Series Per Junction TJ = 125°C 50 0 0 50 Average On-state Current (A) 110 Conduction Period 90 30° 60° 90° 120° 70 180° DC 60 0 50 100 150 200 250 Peak Half Sine Wave On-state Current (A) VSK.170.. Series R thJC (DC) = 0.17 K/W 80 200 250 300 Fig. 4 - On-State Power Loss Characteristics 300 5000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 4000 3500 3000 2500 VSK.170.. Series Per Junction 2000 1 10 100 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 300 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Maximum Average On-state Power Loss (W) 130 100 150 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 120 100 180° 120° 90° 60° 30° 250 200 RMS Limit 150 100 Conduction Angle 50 VSK.170.. Series Per Junction TJ = 125°C 0 0 40 80 120 160 200 5000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied 4500 4000 3500 3000 2500 VSK.170.. Series Per Junction 2000 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94417 Revision: 22-Apr-08 VSK.170PbF, .250PbF Series 400 A =0 W K/ R th S 8 0. 0 W K/ .04 K/ W K/ W -D 0.3 5 K/W e lt 250 K/ W K/ W 2 0. 3 0. 2 0.1 300 0. 25 W K/ 180° 120° 90° 60° 30° 350 16 0. aR Maximum Total On-state Power Loss (W) SCR/SCR and SCR/Diode Vishay High Power Products TM (MAGN-A-PAK Power Modules), 170/250 A 200 Conduction Angle 150 100 VSK.170.. Series Per Module TJ = 130°C 50 0 0 0 100 150 200 250 300 350 400 50 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics W K/ -D e lt a R 100 K/ W K/ W 0.35 2 x VSK.170.. Series Single Phase Bridge Connected TJ = 130°C 200 2K /W 0. 2 5K /W 400 300 . 02 =0 0 .2 A 500 0. 1 6 W K/ 180° (Sine) 180° (Rect) 600 K/ W W K/ 700 0.1 0. 08 K/ W 04 0. 1 800 S R th 0. 900 06 0. Maximum Total Power Loss (W) 1000 K/ W 0 0 50 100 150 200 250 300 0 350 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-State Power Loss Characteristics 600 3 x VSK.170.. Series Three Phase Bridge Connected TJ = 130°C 400 200 0. 1 K/ W 0. 1 2K /W 0. 1 6 K/ W 0.25 K/ W aR 800 8K /W el t -D 120° (Rect) W K/ 1000 K/ W .01 0.0 =0 SA R th 1200 W K/ 0. 05 1400 03 0. Maximum Total Power Loss (W) 1600 0 0 100 200 300 400 Total Output Current (A) 0 500 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94417 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 VSK.170PbF, .250PbF Series 130 SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A VSK.250.. Series RthJC(DC) = 0.125 K/W 120 110 Conduction Angle 100 90 30° 60° 80 90° 120° 70 180° 60 0 50 100 150 200 250 300 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products 500 DC 180° 120° 90° 60° 30° 450 400 350 300 250 RMS Limit 200 150 Conduction Period 100 VSK.250.. Series Per Junction TJ = 130°C 50 0 0 50 Average On-state Current (A) Average On-state Current (A) Fig. 10 - Current Ratings Characteristics VSK.250.. Series RthJC (DC) = 0.125 K/W 120 110 Conduction Period 100 90 30° 60° 90° 80 120° 180° 70 DC 60 0 100 200 300 400 Fig. 13 - On-State Power Loss Characteristics 7500 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) 130 RMS Limit 150 Conduction Angle VSK.250.. Series Per Junction TJ = 130°C 50 0 0 50 100 150 200 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 4500 VSK.250.. Series Per Junction 4000 3500 1 10 250 9000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 4000 VSK.250.. Series Per Junction 3000 0.01 Fig. 12 - On-State Power Loss Characteristics 0.1 1 Pulse Train Duration (s) Average On-state Current (A) www.vishay.com 6 100 Fig. 14 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) 180° 120° 90° 60° 30° 100 6500 Number Of Equal Amplitude Half Cycle Current Pulses (N) 350 200 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130°C 5500 500 Fig. 11 - Current Ratings Characteristics 250 7000 6000 Average On-state Current (A) 300 100 150 200 250 300 350 400 Fig. 15 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] Document Number: 94417 Revision: 22-Apr-08 VSK.170PbF, .250PbF Series 700 =0 /W 5K SA R th 0.0 .02 16 K/ W W K/ 0.2 0 0.3 R 300 a K/ W 0.2 5K /W e lt 400 -D Conduction angle K/ W W K/ 500 0. 08 0. 12 180° 120° 90° 60° 30° 600 0. Maximum Total On-state Power Loss (W) SCR/SCR and SCR/Diode Vishay High Power Products TM (MAGN-A-PAK Power Modules), 170/250 A K/ W 200 VSK.250.. Series Per Module TJ = 130°C 100 0 0 100 200 300 400 500 0 600 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-State Power Loss Characteristics A hS =0 K/ W Rt . 01 W K/ K/ W -D e lt 0 .1 aR 800 /W 2K W K/ 180° (Sine) 180° (Rect) K/ W 0.0 0.0 6 1000 0. 04 03 0. 05 1200 0. Maximum Total Power Loss (W) 1400 K/ W 0.1 2K /W 0 .16 K/ W 600 400 2 x VSK.250.. Series Single Phase Bridge Connected TJ = 130°C 200 0 .3 K /W 0 0 100 200 300 400 500 0 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-State Power Loss Characteristics =0 K/ W 0.1 K/ W 0. 1 2K /W 0.1 6K /W 0.2 0K /W -D e lt aR 3 x VSK.250.. Series Three Phase Bridge Connected TJ = 130°C .01 800 200 SA 1000 400 R th 120° (Rect) 600 W K/ K/ W 0 .0 8K /W 1400 1200 K/ W 03 0. 1600 05 W K/ 0. 06 04 0. 1800 0. Maximum Total Power Loss (W) 2000 0.25 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 700 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-State Power Loss Characteristics Document Number: 94417 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 7 VSK.170PbF, .250PbF Series Typical Reverse Recovery Charge - Qrr (µC) SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A Vishay High Power Products Instantaneous Forward Current (V) 10000 Tj = 25°C Tj = 130°C 1000 VSK.170 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) VSK.170.. Series TJ = 130 °C Per Junction 1600 ITM = 800 A 1400 500 A 1200 300 A 200 A 1000 100 A 800 50 A 600 400 200 0 5 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 21 - Reverse Recovery Charge Characteristics Typical Reverse Recovery Charge - Qrr (µC) Fig. 19 - On-State Voltage Drop Characteristics 10000 Instantaneous Forward Current (V) 1800 Tj = 25°C Tj = 130°C 1000 VSK.250 Series Per Junction 100 2400 VSK.250.. Series 2200 TT ==130 130°C°C JJ PerJunction Junction 2000 Per ITM = 800 A 500 A 300 A 1800 200 A 1600 100 A 1400 1200 50 A 1000 800 600 400 200 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous Forward Voltage (V) 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 20 - On-State Voltage Drop Characteristics Fig. 22 - Reverse Recovery Charge Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1µs b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 µs 10 (1) (2) (3) (4) PGM PGM PGM PGM = = = = 10W, tp = 4ms 20W, tp = 2ms 40W, tp = 1ms 60W, tp = 0.66ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 VSK.170/250 Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 23 - Gate Characteristics www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 94417 Revision: 22-Apr-08 VSK.170PbF, .250PbF Series Transient Thermal Impedance Z thJC (K/W) SCR/SCR and SCR/Diode Vishay High Power Products TM (MAGN-A-PAK Power Modules), 170/250 A 1 Steady State Value: R thJC = 0.17 K/W R thJC = 0.125 K/W 0.1 VSK.170.. Series (DC Operation) VSK.250.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 24 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK T 250 1 2 3 - 16 PbF 4 5 1 - Module type 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94417 Revision: 22-Apr-08 For technical questions, contact: [email protected] www.vishay.com 9 VSK.170PbF, .250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A CIRCUIT CONFIGURATION VSKH... VSKT... VSKL... ~ ~ ~ ~ ~ ~ + + + + + + - - - K1G1 G2 K2 VSKU... - - Available from 400 V to 1600 V K1G1 VSKK... VSKV... VSKN... + + - - + + - - - + + - - + - K1G1 G2 K2 + + K1G1 G2 K2 - + + G2 K2 Available on 1600 V Contact factory for different requirement LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 http://www.vishay.com/doc?95086 For technical questions, contact: [email protected] Document Number: 94417 Revision: 22-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1