CNY74-2H/CNY74-4H Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel FEATURES • CNY74-2H includes 2 isolator channels • CNY74-4H includes 4 isolator channels • Isolation test voltage VISO = 5000 VRMS • Test class 25/100/21 DIN 40 045 • Low coupling capacitance of typical 0.3 pF C E C E • Current transfer ratio (CTR) of typical 100 % 9 • Low temperature coefficient of CTR • Wide ambient temperature range 1 A C C A • Coupling system U 16 PIN • Lead (Pb)-free component 8 PIN 17188 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C DESCRIPTION APPLICATIONS The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-pin, resp. 16-pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. • Galvanically separated circuits, non-interacting switches AGENCY APPROVALS • UL1577, file no. E76222 system code U, double protection • CSA22.2 bulletin 5A ORDER INFORMATION PART REMARKS CNY74-2H CTR 50 to 600 %, DIP-8 CNY74-4H CTR 50 to 600 %, DIP-16 Note CNY74-2H and CNY74-4M are marked as CNY74-2 and CNY74-4 respectively. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 µs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current Power dissipation Junction temperature Document Number: 83526 Rev. 1.5, 07.-Dec-07 tp/T = 0.5, tp ≤ 10 ms IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C For technical questions, contact: [email protected] www.vishay.com 1 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1 min VISO (2) 5000 VRMS Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C COUPLER AC isolation test voltage (RMS) 2 mm from case, t ≤ 10 s Soldering temperature Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Related to standard climate 23/50 DIN 50014. (3) Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF 1.25 1.6 V Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0 A, E = 0 ICEO t=2s VISO(2) VIO = 1000 V, 40 % relative humidity RIO(2) INPUT Forward voltage OUTPUT Collector dark current 100 nA COUPLER DC isolation test voltage Isolation resistance Collector emitter saturation voltage Cut-off frequency 5000 V Ω 1012 IF = 10 mA, IC = 1 mA VCEsat VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz f = 1 MHz Ck 0.3 pF Coupling capacitance 0.3 V Note (1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. (2) Related to standard climate 23/50 DIN 50014. CURRENT TRANSFER RATIO PARAMETER IC/IF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT VCE = 5 V, IF = 5 mA CTR 50 100 600 % VCE = 5 V, IF = 10 mA CTR 60 120 MIN. TYP. % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td 3.0 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5.0 µs Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) ton 9.0 µs Turn-off time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 2) toff 18.0 µs www.vishay.com 2 For technical questions, contact: [email protected] MAX. UNIT Document Number: 83526 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel IF +5V IF IF 0 Vishay Semiconductors 0 IC IC = 2 mA; adjusted through input amplitude tp t 100 % 90 % RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 Oscilloscope RL = 1 M CL = 20 pF 10 % 0 100 tp td tr t on (= t d + tr) 95 10804 tr td t on ts Pulse Duration Delay Time Rise Time Turn-on Time ts tf t off (= ts + tf) tf t off t Storage Time Fall Time Turn-off Time 96 11698 Fig. 1 - Test Circuit, Non-Saturated Operation IF Fig. 3 - Switching Times +5V IF = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 2 - Test Circuit, Saturated Operation TYPICAL CHARACTERISTICS 1000 300 Coupled device IF - Forward Current (mA) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 250 200 Phototransistor 150 IR-diode 100 50 0 10 1 0.1 0 96 11700 100 40 80 Tamb - Ambient Temperature (°C) Fig. 4 - Total Power Dissipation vs. Ambient Temperature Document Number: 83526 Rev. 1.5, 07.-Dec-07 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 120 96 11862 VF - Forward Voltage (V) Fig. 5 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 3 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel 2.0 100 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 0 - 25 25 50 5 mA 1 mA 0.1 100 10 Fig. 9 - Collector Current vs. Collector Emitter Voltage VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 100 10 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 1 0 25 50 75 1 Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) 100 VCE = 5 V 10 1 0.1 1 10 100 IF - Forward Current (mA) Fig. 8 - Collector Current vs. Forward Current 100 10 IC - Collector Current (mA) 95 11028 Fig. 7 - Collector Dark Current vs. Ambient Temperature 0.01 0.1 0 100 Tamb - Ambient Temperature (°C) 95 11026 IC - Collector Current (mA) 1 VCE - Collector Emitter Voltage (V) 1.0 VCE = 20 V IF = 0 1000 www.vishay.com 4 2 mA 1 95 10985 10000 95 11027 10 mA 10 75 Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature ICEO - Collector Dark Current, with Open Base (nA) IF = 50 mA 0.1 0 Tamb - Ambient Temperature (°C) 95 11025 20 mA IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio Vishay Semiconductors 1000 VCE = 5 V 100 10 1 0.1 95 11029 1 10 100 IF - Forward Current (mA) Fig. 11 - Current Transfer Ratio vs. Forward Current For technical questions, contact: [email protected] Document Number: 83526 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H ton/toff - Turn-on/Turn-off Time (µs) Optocoupler, Phototransistor Output, Multichannel 50 Customer Code / Identification / Option Saturated Operation VS = 5 V RL = 1 kΩ 40 30 UL Logo toff 20 Product Code XXXXX XXXXX V D E VDE Logo V XXXY 68 Plant Code 10 Vishay Logo ton 0 5 0 10 15 Date Code (year, week) Package Code 17939 20 IF - Forward Current (mA) 95 11031 Fig. 12 - Turn-on/off Time vs. Forward Current ton/toff- Turn-on /Turn-off Time (µs) Vishay Semiconductors Fig. 14 - Marking Example 10 8 Non Saturated Operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 2 0 95 11030 4 6 8 IC - Collector Current (mA) Fig. 13 - Turn-on/off Time vs. Collector Current PACKAGE DIMENSIONS in millimeters < 9.8 3.6 ± 0.1 7.62 nom. 4.4 ± 0.2 9.5 ± 0.2 6.3 ± 0.1 3.3 0.25 ± 0.05 0.53 ± 0.05 1.32 ± 0.05 9 ± 0.8 2.54 nom. 3 x 2.54 = 7.62 8 7 6 5 1 2 3 4 Weight: ca. 0.55 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board technical drawings according to DIN specifications 14784 Document Number: 83526 Rev. 1.5, 07.-Dec-07 For technical questions, contact: [email protected] www.vishay.com 5 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 7.62 nom. 3.6 ± 0.1 4.4 ± 0.2 < 20 6.3 ± 0.1 3.3 19.7 ± 0.2 05 0.25 ± 0. 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. 7 x 2.54 = 17.78 16 15 14 13 12 11 10 9 Weight: ca. 1.08 g Creepage Distance: > 6 mm Air Path: > 6 mm after Mounting on PC Board technical drawings according to DIN specifications 14783 1 www.vishay.com 6 2 3 4 5 6 7 8 For technical questions, contact: [email protected] Document Number: 83526 Rev. 1.5, 07.-Dec-07 CNY74-2H/CNY74-4H Optocoupler, Phototransistor Output, Multichannel Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83526 Rev. 1.5, 07.-Dec-07 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1