VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A FEATURES • High current capability • High surge capability RoHS COMPLIANT • Industrial standard package • 3000 VRMS isolating voltage with non-toxic substrate • Lead (Pb)-free • Designed and qualified for industrial level TYPICAL APPLICATIONS SUPER MAGN-A-PAKTM • Motor starters • DC motor controls - AC motor controls PRODUCT SUMMARY IT(AV) or IF(AV) 500 A • Uninterruptable power supplies MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) or IF(AV) TC IT(RMS) TC ITSM or IFSM I2 t UNITS 500 A 82 °C 785 A 82 °C 50 Hz 17.8 60 Hz 18.7 kA 50 Hz 1591 60 Hz 1452 I2√t VDRM/VRRM TStg VALUES Range 15 910 kA2√s 800 to 1600 V - 40 to 150 TJ kA2s - 40 to 130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.500 VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: [email protected] IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 www.vishay.com 1 VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 A Maximum average on-state current at case temperature IT(AV), IF(AV) 180° conduction, half sine wave 82 °C Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 785 A t = 10 ms 17.8 Maximum peak, one-cycle, non-repetitive on-state surge current ITSM, IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 18.7 15.0 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 15.7 1591 1452 1125 VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.85 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.93 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.36 High level value on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.32 Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 VTM VFM Maximum holding current IH Maximum latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1027 15 910 Low level value or threshold voltage Maximum on-state or forward voltage drop kA 500 1000 kA2√s V mΩ V mA SWITCHING PARAMETER SYMBOL Maximum rate of rise of turned-on current dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 2.0 Typical turn-off time tq ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω 200 µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL TEST CONDITIONS VALUES UNITS dV/dt TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/µs RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (SUPER MAGN-A-PAK Power Modules), 500 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current +IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS VALUES TJ = TJ maximum, tp ≤ 5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 3.0 TJ = TJ maximum, tp ≤ 5 ms 20 5.0 TJ = 25 °C, Vak 12 V TJ = TJ maximum UNITS W A V 200 mA 3.0 V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 130 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink RthC-hs DC operation °C 0.065 K/W SMAP to heatsink Mounting torque ± 10 % busbar to SMAP 0.02 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Approximate weight 6-8 Nm 12-15 1500 Case style See dimensions - link at the end of datasheet g SUPER MAGN-A-PAK ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: [email protected] www.vishay.com 3 VSK.500-..PbF Series 130 VSK.500.. Series R thJC (DC) = 0.065 K/ W 120 110 Conduc tion Angle 100 90 30° 80 60° 90° 120° 70 180° 60 0 100 200 300 400 500 600 Maximum Average On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A DC 180° 120° 90° 60° 30° 900 800 700 600 500 400 RMS Limit Conduction Period 300 VSK.500.. Series Per Junc tion TJ = 130°C 200 100 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 130 VSK.500.. Series R thJC (DC) = 0.065 K/ W 120 110 Conduction Period 100 90 80 30° 60° 90° 120° 180° 70 DC 60 0 100 200 300 400 500 600 700 800 900 180° 120° 90° 60° 30° 400 RMSLimit 300 Conduc tion Angle 200 VSK.500.. Series Per Junction TJ= 130°C 100 0 0 100 200 300 400 14000 @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 12000 11000 10000 9000 VSK.500.. Series Per Junction 8000 7000 10 100 500 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 700 500 At Any Rated Loa d Cond ition And With Rated VRRM Ap p lied Following Surge. Initial TJ = 130°C 15000 1 Fig. 2 - Current Ratings Characteristics 600 16000 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) Maximum Average On-state Power Loss (W) 1000 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Vishay High Power Products 18000 16000 14000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Control Of Cond uc tion Ma y Not Be Maintained. Initial TJ = 130°C No Voltage Reapplied Rated VRRMReapplied 12000 10000 8000 VSK.500.. Series Per Junction 6000 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series A = W K/ W K/ S R th 09 0. 750 700 180° 650 120° 0. 16 90° 600 K/ 60° W 550 0.2 30° K 500 Conduction Angle /W 450 400 0.3 K/ W 350 0.4 300 K/ W 250 0.6 K 200 /W 150 VSK.500.. Series Per Module 100 TJ = 130°C 50 0 0 100 200 300 400 500 600 700 800 0 20 12 0. 07 0. W K/ e lt -D a R Maximum Total On-state Power Loss (W) Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (SUPER MAGN-A-PAK Power Modules), 500 A 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Total RMSOutput Current (A) Fig. 7 - On-State Power Loss Characteristics 0. 02 K/ W 1000 2 x VSK.500.. Series Single Phase Bridge Connected T J = 130°C 500 R K/ W 0.0 8K /W 0.12 K/ W 0.2 K /W ta el -D 1500 W K/ 0.0 5 01 0. 2000 K/ W = 0. 03 A hS 180° (Sine) 180° (Rect) 2500 Rt Maximum Total Power Loss (W) 3000 0 0 200 400 600 800 1000 0 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics R 4000 120° (Rect) 3500 SA th Maximum Total Power Loss (W) 4500 0. 02 K/ W 0.0 3K /W 3000 2500 2000 1500 3 x VSK.500.. Series Three Phase Bridge Connected T J = 130°C 1000 500 = 0. 01 K/ W -D el ta R 0.0 5K /W 0.08 K/ W 0.2 K/ W 0 0 250 500 750 0 1000 1250 1500 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94420 Revision: 20-Mar-08 For technical questions, contact: [email protected] www.vishay.com 5 VSK.500-..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (SUPER MAGN-A-PAKTM Power Modules), 500 A TJ= 25°C 1000 TJ= 130°C VSK.500.. Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 0.1 Transient Thermal Impedance Z thJC (K/ W) Instantaneous On-state Current (A) 10000 VSK.500.. Series Per Junc tion 0.01 Steady State Value: RthJC = 0.065 K/ W (DC Operation) 0.001 0.001 4.5 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM (2) PGM (3) PGM (4) PGM = 10W, = 20W, = 40W, = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms (a) (b) VGD IGD 0.1 0.001 0.01 Tj=-40 °C 1 Tj=25 °C Tj=130 °C Instantaneous Gate Voltage (V) 100 (1) VSK.500.. Series 0.1 (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94420 Revision: 20-Mar-08 VSK.500-..PbF Series Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TM (SUPER MAGN-A-PAK Power Modules), 500 A ORDERING INFORMATION TABLE Device code VSK T 500 1 2 3 - 16 PbF 4 5 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT VSKH VSKL 1 1 1 ~ ~ + + 2 3 ~ + 2 - 3 2 - 3 - 4 (K1) 7 (K2) 4 (K1) 7 (K2) 5 (G1) 6 (G2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94420 Revision: 20-Mar-08 http://www.vishay.com/doc?95283 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1