FAIRCHILD BC636TFR_09

BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
a
Symbol
= 25°C unless otherwise noted
Parameter
Value
Units
-45
V
VCER
Collector-Emitter Voltage at RBE=1KΩ
VCES
Collector-Emitter Voltage
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
ICP
Peak Collector Current
-1.5
A
IB
Base Current
-100
mA
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
IC= -10mA, IB=0
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
IEBO
Emitter Cut-off Current
VEB= -5V, IC=0
hFE1
hFE2
hFE3
DC Current Gain
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
Min.
Typ.
Max.
Units
-0.1
μA
-10
μA
-45
V
25
40
25
250
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
-0.5
V
VBE (on)
Base-Emitter On Voltage
VCE= -2V, IC= -500mA
-1
V
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA,
f=50MHz
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
100
MHz
www.fairchildsemi.com
1
BC636 — PNP Epitaxial Silicon Transistor
March 2009
BC636 — PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking
Device
Package
BC636
BC636
TO-92
BC636
BC636BU
TO-92
BC636
BC636TA
TO-92
BC636
BC636TAR
TO-92
BC636
BC636TF
TO-92
BC636
BC636TFR
TO-92
BC636
BC636_J35Z
TO-92
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
2
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-500
1000
VCE = - 2V
IB = - 1.6 mA
-400
IB = - 1.4 mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = - 1.8 mA
IB = - 1.2 mA
IB = - 1.0 mA
-300
IB = - 0.8 mA
IB = - 0.6 mA
-200
IB = - 0.4 mA
-100
IB = - 0.2 mA
-0
100
10
-0
-10
-20
-30
-40
-50
-1
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
-1000
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
VCE = - 2V
-100
-10
-1
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
100
Cob[pF], CAPACITANCE
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
3
BC636 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC636 — PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
14.47 ±0.40
0.46 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
0.38 –0.05
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60 ±0.20
(R2.29)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com