NTE NTE5640

NTE5640 thru NTE5643
TRIAC, 2.5A
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C, Note 1), VDROM
NTE5640 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5641 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5642 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5643 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 360°), IT(RMS) . . . . . . . . . . . . . . . . . 2.5A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 30A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Fusing Current (For TRIAC Protection, T = 1.25 to 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A2s
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings and TC = +25°C unless otherwise specified)
Parameter
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
IDROM
VDROM = Max Rating, TJ = +100°C,
Gate Open, Note 1
–
–
0.75
mA
iT = 5A (Peak), Note 1
–
–
2.2
V
Gate Open
–
–
15
mA
vD = VDROM, TC = +100°C, Note 1
–
7
–
V/µs
VTM
IH
Critical
dv/dt
DC Gate–Trigger Current
IGT
vD = 6V, RL = 39Ω, All Quads
–
–
25
mA
DC Gate–Trigger Voltage
VGT
vD = 6V, RL = 39Ω
–
–
2.2
V
vD = VDROM, IGT = 80mA, tr = 0.1µs,
iT = 10A (Peak)
–
2.2
–
µs
Gate–Controlled Turn–On Time
tgt
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
.500 (12.7)
Min
.019 (0.5) Dia
Gate
MT1
MT2
45°
.031 (.793)