BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 °C in a common source test circuit. Gp ηD (W) (dB) - 14 Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) (MHz) (MHz) (V) (mA) (W) 2-tone 2170 2170.1 28 450 36 2-carrier W-CDMA[1] 2115 2165 28 [1] 3GPP test model 1; 64 channels with 66 % clippings [2] Measured within 10 kHz bandwidth 450 - 6 15 IMD ACPR IMD3 (%) (dBc) (dBc) (dBc) 34 −24 - - - −42[2] −38 21 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Excellent back off linearity n Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and IDq of 450 mA: u Average output power = 6 W u Gain = 15 dB u Efficiency = 21 % u ACPR = −42 dBc (at 3.84 MHz) u IMD3 = −38 dBc n Easy power control n Excellent ruggedness n High power gain n Excellent thermal stability n Designed for broadband operation (2000 MHz to 2200 MHz) n Internally matched for ease of use n ESD protection BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range n Broadcast drivers 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 [1] 2 3 3 2 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number BLF3G22-30 Package Name Description Version - flanged ceramic package; 2 mounting holes; 2 leads SOT608A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage - ±15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 2 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Rth(j-case) thermal resistance from junction to case [1] Typ Th = 25 °C [1] Unit 1.85 K/W Thermal resistance is determined under specified RF operating conditions 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.7 mA 65 - - V V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 70 mA 2.0 - 3.0 IDSS drain leakage current VGS = 0 V; VDS = 26 V - - 1.5 µA IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V 9 - - A IGSS gate leakage current VGS = ±15 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 3.5 A - 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 2.5 A - 0.3 - Ω Crs feedback capacitance - 1.7 - pF Max Unit VGS = 0 V; VDS = 26 V; f = 1 MHz 7. Application information Table 7. Symbol Application information Parameter Conditions Min Typ Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; IDq = 450 mA Gp power gain PL(PEP) = 30 W - 14 - dB RLin ηD input return loss PL(PEP) = 30 W - −15 - dB drain efficiency PL(PEP) = 30 W - 33 - % IMD3 third order intermodulation distortion PL(PEP) = 30 W - −24 - dBc PL(PEP) < 6 W - < −50 - dBc Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping; f1 = 2115 MHz; f2 = 2165 MHz; IDq = 450 mA Gp power gain PL(AV) = 6 W 13 15 - dB RLin input return loss PL(AV) = 6 W - −10 −8 dB ηD drain efficiency PL(AV) = 6 W 18 21 - % IMD3 third order intermodulation distortion PL(AV) = 6 W - −38 −35 dBc ACPR adjacent channel power ratio PL(AV) = 6 W - −42 −38 dBc [1] Measured within 10 kHz bandwidth. BLF3G22-30_1 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 3 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF3G22-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 450 mA; PL = 30 W (CW); f = 2170 MHz. 7.2 One-tone 001aag535 20 Gp (dB) 16 50 ηD (%) 40 Gp 12 30 8 20 ηD 4 0 10−1 1 10 0 102 10 PL(AV) (W) VDS = 28 V; IDq = 450 mA; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz Fig 1. Power gain and drain efficiency as functions of average load power; typical values 7.3 Two-tone 001aag536 20 Gp (dB) 16 50 ηD (%) 40 Gp 12 30 8 20 10 4 ηD 0 10−1 1 0 102 10 PL(PEP) (W) VDS = 28 V; IDq = 450 mA; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical values BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 4 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 001aag541 0 IMD (dBc) 001aag542 0 IMD3 (dBc) −30 −30 (1) (2) IMD3 −60 −60 (3) IMD5 IMD7 −90 10−1 1 102 10 −90 10−1 PL(PEP) (W) 1 102 10 PL(PEP) (W) VDS = 28 V; IDq = 450 mA; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz VDS = 28 V; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz (1) IDq = 400 mA (2) IDq = 450 mA (3) IDq = 500 mA Fig 3. Intermodulation distortion as function of peak envelope load power; typical values Fig 4. IMD3 as function of peak envelope load power; typical values BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 5 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 7.4 Two-carrier W-CDMA Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping; peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF; channel spacing = 10 MHz; bandwidth = 3.84 MHz. 001aag537 20 Gp (dB) 16 50 ηD (%) 40 Gp 001aag538 0 IMD3, ACPR (dBc) −20 12 30 8 20 −40 4 IMD3 10 ηD ACPR 0 26 30 0 38 42 PL(AV) (W) 34 −60 26 VDS = 28 V; IDq = 450 mA; Th = 25 °C; f1 = 2115 MHz; f2 = 2165 MHz 30 34 38 42 PL(AV) (W) VDS = 28 V; IDq = 450 mA; Th = 25 °C; f1 = 2115 MHz; f2 = 2165 MHz Fig 5. Power gain and drain efficiency as functions of average load power; typical values Fig 6. IMD3 and ACPR as functions of average load power; typical values. 7.5 Input impedance and load impedances measured under CW conditions 001aag539 12 001aag540 8 RL ZL (Ω) Zi (Ω) 4 Ri 8 0 4 Xi −4 XL −8 0 2 2.05 2.1 2.15 2.2 2 f (GHz) 2.1 2.15 2.2 f (GHz) VDS = 28 V; IDq = 450 mA; PL = 30 W; Th ≤ 25 °C Fig 7. Input impedance as function of frequency (series components); typical values VDS = 28 V; IDq = 450 mA; PL = 30 W; Th ≤ 25 °C Fig 8. Load impedance as function of frequency (series components); typical values BLF3G22-30_1 Product data sheet 2.05 © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 6 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 8. Test information L1 VDD C8 C7 L11 C6 C13 C17 C14 C19 C20 VGate R1 L6 C11 C3 input 50 Ω L2 L3 C4 C1 L4 L5 L7 L8 C5 L9 C9 L10 C10 output 50 Ω C12 C2 L12 C16 C18 C15 mld944 Fig 9. Class-AB test circuit BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 7 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 40 mm 40 mm 60 mm BLF3G22-30 testjig input C8 BLF3G22-30 testjig output C13 R1 C17 C6 C20 C14 L1 C19 C7 C3 C4 C11 C12 C5 C1 C9 C2 C10 C15 C18 C16 BLF3G22-30 testjig input BLF3G22-30 testjig output 001aag543 Dimensions in mm. The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 2.2); thickness = 0.79 mm. The other side is unetched and serves as a ground plane. See Table 8 for list of components. Fig 10. Component layout for 2.17 GHz class-AB test circuit BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 8 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor Table 8. List of components (see Figure 9 and Figure 10) Component Description Value C1, C2, C9, C10 Tekelec variable capacitor; type 37271 0.6 pF to 4.5 pF C3, C4, C11, C12 multilayer ceramic chip capacitor [1] 6.8 pF C5 multilayer ceramic chip capacitor [1] 2.2 pF C6, C7, C13, multilayer ceramic chip capacitor C14, C15, C16 [1] 12 pF C8 tantalum capacitor C17, C18 multilayer ceramic chip capacitor Dimensions 10 µF 1.5 µF [2] TDK C3225X7R1H155M 1 nF C19 multilayer ceramic chip capacitor C20 electrolytic capacitor 100 µF; 63 V L1 handmade; enamelled 1 mm copper wire - 2 loops; 4 mm in diameter L2 stripline [3] 50 Ω 12 mm × 2.4 mm L3 stripline [3] 43 Ω 18 mm × 3 mm stripline [3] 29 Ω 4 mm × 5 mm stripline [3] 10 Ω 5 mm × 18.4 mm L6 stripline [3] 56 Ω 34.4 mm × 2 mm L7 stripline [3] 9Ω 10 mm × 20 mm stripline [3] 29 Ω 4 mm × 5 mm stripline [3] 41 Ω 20 mm × 3.2 mm L10 stripline [3] 50 Ω 5 mm × 2.4 mm L11, L12 stripline [3] 17 Ω 24.5 mm × 10 mm L4 L5 L8 L9 Catalogue No. [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (εr = 2.2); thickness = 0.79 mm. BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 9 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 10.21 10.29 10.01 10.03 inches 0.182 0.148 0.285 0.006 0.275 0.004 0.402 0.405 0.394 0.395 OUTLINE VERSION D D1 F H p Q q U1 U2 w1 w2 10.21 10.29 10.01 10.03 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.402 0.405 0.394 0.395 0.045 0.620 0.035 0.580 0.130 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 E E1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 SOT608A Fig 11. Package outline SOT608A BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 10 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency UHF Ultra High Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF3G22-30_1 20070621 Product data sheet - - BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 11 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF3G22-30_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 21 June 2007 12 of 13 BLF3G22-30 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 One-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . 6 Input impedance and load impedances measured under CW conditions . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 June 2007 Document identifier: BLF3G22-30_1