FDD8447L_F085 N-Channel PowerTrench® MOSFET 40V, 50A, 11.0mΩ Features Applications Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control Qualified to AEC Q101 Power Train Management RoHS Compliant Solenoid and Motor Drivers Electronic Transmission Primary Switch for 12V and 24V Systems D D G S G D-PAK TO -252 (TO-252) ©2009 Fairchild Semiconductor Corporation FDD8447L_F085 Rev. A1 S 1 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET February 2009 Symbol Drain to Source Voltage VDSS VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 80oC, VGS = 10V) 50 (Note 1) Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 2) 40 mJ Power Dissipation 65 W Dreate above 25oC 0.43 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case 2.3 o C/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 o C/W Package Marking and Ordering Information Device Marking FDD8447L Device FDD8447L_F085 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V - - 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V - - ±100 nA VGS = VDS, ID = 250µA V On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance 1.0 1.9 3.0 ID = 14A, VGS = 10V - 7.0 8.5 ID = 11A, VGS = 4.5V - 8.5 11.0 ID = 14A, VGS = 10V, TJ = 125°C - 10.4 14.0 ID = 14A, VDS = 5V - 58 - VDS = 20V, VGS = 0V, f = 1MHz - 1970 - pF - 250 - pF pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 150 - Rg Gate Resistance f = 1MHz - 1.27 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 37 52 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDD8447L_F085 Rev. A1 2 VDD = 20V ID = 14A VGS = 10V - 20 28 - 6 - nC - 7 - nC www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units - 12 21 ns - 12 21 ns - 38 61 ns - 9 18 ns - 0.8 1.2 V - 22 29 ns - 11 14 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 20 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 14A IF = 14A, dISD/dt = 100A/µs Notes: 1: Starting TJ = 25oC to 175oC. 2: Starting TJ = 25oC, L = 0.05mH, IAS = 40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8447L_F085 Rev. A1 3 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 70 1.0 60 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJC 50 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 CURRENT LIMITED BY PACKAGE D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.001 -5 10 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 4. Peak Current Capability FDD8447L_F085 Rev. A1 4 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 400 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 1ms 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 100 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 100 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 60 40 TJ = 175oC TJ = -55oC 20 80 VGS = 10V VGS = 6V 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V VGS = 4.5V VGS = 3.5V VGS = 4V 40 VGS = 3V 20 o TJ = 25 C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.0 4.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 40 ID = 14A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 30 20 o TJ = 175 C 10 TJ = 25oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8447L_F085 Rev. A1 2.5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 14A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 VGS = VDS ID = 250µA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 4000 CAPACITANCE (pF) Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 13. Capacitance vs Drain to Source Voltage FDD8447L_F085 Rev. A1 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature ID = 1mA 10 ID = 14A 8 VDD = 10V VDD = 20V 6 VDD = 30V 4 2 0 0 8 16 24 Qg, GATE CHARGE(nC) 32 40 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET Typical Characteristics FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 FDD8447L_F085 Rev. A1 7 www.fairchildsemi.com FDD8447L_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.