ONSEMI 2N3700

2N3700
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
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COLLECTOR
3
Temperature Range Screening
2
BASE
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
80
Vdc
Collector −Base Voltage
VCBO
140
Vdc
Emitter −Base Voltage
VEBO
7.0
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
PT
500
mW
Total Device Dissipation @ TC = 25°C
PT
1.0
W
TJ, Tstg
−65 to
+200
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
TO−18
CASE 206AA
STYLE 1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Note 1)
Characteristic
RqJA
325
°C/W
Thermal Resistance, Junction to Case
RqJC
150
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This number assumes a substrate of 1 oz. thick copper and a copper area of
550 mm2.
ORDERING INFORMATION
Device
Package
Shipping
TO−18
Bulk
JAN2N3700
JANTX2N3700
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1
Publication Order Number:
2N3700/D
2N3700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
50
90
100
50
15
300
−
300
300
−
−
−
0.2
0.5
−
1.1
−
12
5.0
20
Unit
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 10 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 1.0 Adc, VCE = 10 Vdc) (Note 2)
Collector −Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
Small−Signal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
|hfe|
2. Pulse Test: See section 4 of MIL−STD−750.
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2
pF
−
2N3700
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA−01
ISSUE O
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
0.007 (0.18MM) A B S C
3X
DETAIL X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.41
0.53
--0.76
0.41
0.48
0.91
1.17
0.71
1.22
12.70
19.05
6.35
--45_BSC
2.54 BSC
--1.27
1.37 BSC
--0.76
2.54
---
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
--0.030
0.016
0.019
0.036
0.046
0.028
0.048
0.500
0.750
0.250
--45 _BSC
0.100 BSC
--0.050
0.054 BSC
--0.030
0.100
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N3700/D