BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Features • • • Free−Wheeling Diode Built−In Flat DC Current Gain Fast Switching Times and Tight Distribution “6 Sigma” Process Providing Tight and Reproducible Parameter Spreads Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Machine Model, C; >400 V Human Body Model, 3B; >8000 V These are Pb−Free Packages Two Versions MARKING DIAGRAMS 4 1 2 • BUD42D−1: Case 369D for Insertion Mode • BUD42D, BUD42DT4: Case 369C for Surface Mount Mode 3 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS Rating Value Unit VCEO 350 Vdc Collector−Base Breakdown Voltage VCBO 650 Vdc Collector−Emitter Breakdown Voltage VCES 650 Vdc Emitter−Base Voltage VEBO 9 Vdc Collector Current − Continuous − Peak (Note 1) IC Adc ICM 4.0 8.0 Base Current − Continuous − Peak (Note 1) IB IBM 1.0 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 25 0.2 W W/_C TJ, Tstg −65 to +150 _C hFE hFE 13 16 − − Operating and Storage Temperature TYPICAL GAIN Typical Gain @ IC = 1 A, VCE = 2 V Typical Gain @ IC = 0.3 A, VCE = 1 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%10 © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 5 1 2 1 Collector 3 Base Emmitter 4 Collector 4 1 AYWW BU D42DG Symbol Collector−Emitter Sustaining Voltage 4 Collector AYWW BU D42DG • • • • 2 3 DPAK CASE 369D STYLE 1 1 2 3 Base Collector Emmitter A Y WW BUD43D G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Publication Order Number: BUD42D/D BUD42D THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case RqJC 5.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 71.4 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 seconds ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 350 430 − 650 780 − 9.0 12 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO Vdc Vdc Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) @ TC = 25°C @ TC = 125°C ICEO − − − − 100 200 mAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C ICES − − − − 10 200 mAdc − − 100 Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VBE(sat) − 0.85 1.2 Vdc Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) VCE(sat) − 0.2 1.0 Vdc 8.0 10 13 12 − − − 0.9 1.5 4.6 − 6.55 − − 0.8 − − 2.8 3.2 − − DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) hFE − DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1.0 Adc) VEC V SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 ms) Turn−Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Toff Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = −2 V) Tf ms ms DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 IC = 400 mA IB1 = 40 mA VCC = 300 V IC = 1 A IB1 = 200 mA VCC = 300 V VCE(dsat) @ 1 ms @ TC = 25°C @ TC = 125°C @ 3 ms @ TC = 25°C @ TC = 125°C − − 0.75 1.3 − − @ 1 ms @ TC = 25°C @ TC = 125°C − − 2.1 4.7 − − @ 3 ms @ TC = 25°C @ TC = 125°C − − 0.35 0.6 − − http://onsemi.com 2 V BUD42D TYPICAL STATIC CHARACTERISTICS 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 TJ = 125°C TJ = 25°C 10 TJ = -20°C 1 TJ = 125°C TJ = 25°C 10 TJ = -20°C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.001 Figure 1. DC Current Gain @ VCE = 1 V 10 IC/IB = 5 VCE , VOLTAGE (VOLTS) TJ = 25°C VCE , VOLTAGE (VOLTS) 10 Figure 2. DC Current Gain @ VCE = 5 V 3 2A 2 1.5 A 1A 1 IC = 0.2 A 0 0.001 0.01 1 TJ = 125°C 0.1 TJ = 25°C TJ = -20°C 0.4 A 0.1 1 IB, BASE CURRENT (AMPS) 0.01 0.001 10 Figure 3. Collector Saturation Region 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. Collector−Emitter Saturation Voltage 100 10 IC/IB = 8 IC/IB = 10 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 1 TJ = -20°C TJ = 25°C 0.1 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 1 TJ = 25°C 0.1 0.01 0.001 10 TJ = -20°C Figure 5. Collector−Emitter Saturation Voltage 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 3 10 BUD42D TYPICAL STATIC CHARACTERISTICS 10 10 1 IC/IB = 8 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = -20°C TJ = 125°C 0.1 0.001 1 TJ = 125°C TJ = 25°C 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) TJ = -20°C 0.1 0.001 10 Figure 7. Base−Emitter Saturation Region 10 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS) 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 8. Base−Emitter Saturation Region 10 1 TJ = 25°C TJ = -20°C TJ = 125°C 0.1 0.001 TJ = 25°C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 VEC(V) = -20°C VEC(V) = 125°C 0.1 0.01 10 Figure 9. Base−Emitter Saturation Region VEC(V) = 25°C 0.1 1 REVERSE EMITTER-COLLECTOR CURRENT Figure 10. Forward Diode Voltage http://onsemi.com 4 10 BUD42D TYPICAL SWITCHING CHARACTERISTICS 1000 900 800 100 BVCER (VOLTS) C, CAPACITANCE (pF) Cib TJ = 25°C f(test) = 1 MHz Cob 10 ICER = 10 mA 700 600 ICER = 100 mA lC = 25 mH 500 400 TC = 25°C 1 300 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 10000 RBE (W) Figure 11. Capacitance Figure 12. BVCER = f(RBE) 800 9 IBon = IBoff VCC = 300 V PW = 40 ms IBon = IBoff VCC = 300 V PW = 40 ms 700 600 6 500 t, TIME (ns) t, TIME (ns) 1000 100 hFE = 10 400 hFE = 5 300 hFE = 5 3 200 TJ = 125°C TJ = 25°C 100 TJ = 125°C TJ = 25°C 0 0 0 1 0.5 1.5 IC, COLLECTOR CURRENT (AMPS) 2 0 Figure 13. Resistive Switching, ton 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 14. Resistive Switching, toff 4 4 TJ = 125°C TJ = 125°C TJ = 25°C 2 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH 3 t, TIME ( μ s) IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH 3 t, TIME ( μ s) hFE = 10 TJ = 25°C 2 1 1 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 0.5 Figure 15. Inductive Storage Time, tsi @ hFE = 5 1.5 1 IC, COLLECTOR CURRENT (AMPS) Figure 16. Inductive Storage Time, tsi @ hFE = 10 http://onsemi.com 5 2 BUD42D TYPICAL SWITCHING CHARACTERISTICS 250 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C 300 TJ = 125°C t, TIME (ns) t, TIME (ns) 200 tc 200 TJ = 25°C IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 mH 150 tfi 100 100 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 0 0.5 2 1 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5 2 Figure 18. Inductive Fall Time, tfi @ hFE = 10 5 500 4 t, TIME ( m s) t, TIME (ns) 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C IC = 1 A 3 300 TJ = 25°C 200 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) IC = 0.3 A 2 1 2 3 Figure 19. Inductive Cross Over Time, tc @ hFE = 10 5 6 7 8 9 hFE, FORCED GAIN 10 11 12 Figure 20. Inductive Storage Time, tsi 300 300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH IC = 0.3 A CROSS-OVER TIME (ns) t fi , FALL TIME (ns) 4 200 IC = 1 A IC = 0.3 A IC = 1 A 200 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 100 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 2 Figure 21. Inductive Fall Time, tf 4 6 hFE, FORCED GAIN 8 Figure 22. Inductive Cross Over Time, tc http://onsemi.com 6 10 BUD42D TYPICAL SWITCHING CHARACTERISTICS 3 di/dt = 10 A/ms, TC = 25°C t fr , FORWARD RECOVERY TIME (ns) t, TIME ( m s) 2.5 440 IB 1 & 2 = 200 mA IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 500 mA 2 50 mA 100 mA 1.5 1 420 400 380 360 340 320 300 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 0 1 0.5 1.5 IF, FORWARD CURRENT (AMPS) 0 2 Figure 23. Inductive Storage Time, tsi 2 Figure 24. Forward Recovery Time, tfr 10 IC VCE 90% IC 8 Dyn 1 ms tfi tsi Dyn 3 ms 6 10% IC 10% Vclamp Vclamp 0V 90% IB IB tc 4 1 ms IB 3 ms 90% IB1 2 0 0 TIME Figure 25. Dynamic Saturation Voltage Measurements 2 4 TIME 6 Figure 26. Inductive Switching Measurements http://onsemi.com 7 8 BUD42D TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A COMMON 50 W MJE210 500 mF IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA MTP12N10 150 W 3W 1 mF -Voff VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED VF VFRM tfr IF 0.1 VF 10% IF Figure 27. tfr Measurement http://onsemi.com 8 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 BUD42D MAXIMUM RATINGS 5 1 ms IC , COLLECTOR CURRENT (AMPS) 5 ms 10 ms 1 ms dc EXTENDED SOA IC , COLLECTOR CURRENT (AMPS) 10 1 0.1 0.01 TJ = 125°C GAIN ≥ 4 LC = 500 mH 4 3 2 VBE(off) = -5 V 1 VBE = 0 V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 300 Figure 28. Forward Bias Safe Operating Area VBE(off) = -1.5 V 400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 700 Figure 29. Reverse Bias Safe Operating Area POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 0.4 0.2 THERMAL DERATING 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 30. Power Derating Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on http://onsemi.com 9 BUD42D 1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 0.1 0.01 1 10 100 1000 t, TIME (ms) Figure 31. Thermal Response ORDERING INFORMATION Package Shipping† BUD42D−1G DPAK Straight Lead (Pb−Free) 75 Units / Rail BUD42DT4G DPAK (Pb−Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 10 BUD42D PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− BUD42D PACKAGE DIMENSIONS DPAK STRAIGHT LEAD CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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