MBR40L60CT SWITCHMODE™ Power Rectifier 60 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 60 VOLTS 1 2, 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 4 Mechanical Characteristics: • • • • • MARKING DIAGRAM Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB CASE 221A STYLE 6 1 2 3 A Y WW B40L60 G AKA MAXIMUM RATINGS Please See the Table on the Following Page AYWW B40L60G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: MBR40L60CT/D MBR40L60CT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 20 40 A IFSM 240 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −65 to +175 °C > 400 > 8000 V Symbol Value Unit RqJC RqJA 1.8 70 Typ Max 0.56 0.53 0.75 0.69 0.61 0.58 0.81 0.74 210 95 550 175 Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 130°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V mA mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBR40L60CTG Package Type Shipping† TO−220AB (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 MBR40L60CT 100 IF, AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 125°C 10 150°C 85°C 1 TJ = 25°C 0.1 0 125°C 10 1 TJ = 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.0E+00 150°C IR, REVERSE CURRENT (A) 125°C 1.0E−02 85°C 1.0E−03 1.0E−04 1.0E−01 125°C 1.0E−02 85°C IR, REVERSE CURRENT (A) 150°C 1.0E−01 1.0E−03 1.0E−05 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 1.0E−06 0 Figure 3. Typical Reverse Current 32 28 SQUARE WAVE 20 16 12 8 4 90 100 110 120 130 140 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 6 RqJC = 1.8°C/W dc 10 Figure 4. Maximum Reverse Current IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 36 0 80 TJ = 25°C 1.0E−04 TJ = 25°C 1.0E−05 24 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 1.0E+00 1.0E−06 0 85°C 150°C 150 RqJA = 70°C/W 5 dc 4 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg Figure 6. Current Derating, Ambient per Leg http://onsemi.com 3 10000 40 TJ = 150°C 35 TJ = 25°C 30 25 C, CAPACITANCE (pF) PF, AVERAGE POWER DISSIPATION (W) MBR40L60CT SQUARE WAVE 20 15 dc 10 1000 100 5 0 0 5 10 15 20 25 30 35 IO, AVERAGE FORWARD CURRENT (A) 10 40 0 10 20 Figure 7. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 8. Capacitance 10 D= 0.5 0.2 1 0.1 0.05 0.1 P(pk) t1 0.01 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Case for MBR40L60CT 100 D= 0.5 10 1 0.2 0.1 0.02 0.05 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 10. Thermal Response Junction−to−Ambient for MBR40L60CT http://onsemi.com 4 100 1000 MBR40L60CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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