MBRA210LT3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2 AMPERES 10 VOLTS Features • • • • • • • Ultra Low VF 1st in the Market Place with a 10 VR Schottky Rectifier Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Optimized for Low Forward Voltage Pb−Free Package is Available SMA CASE 403D PLASTIC Mechanical Characteristics: • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3A MARKING DIAGRAM B2L1 AYWW G B2L1 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MBRA210LT3 MBRA210LT3G Package Shipping † SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 4 1 Publication Order Number: MBRA210LT3/D MBRA210LT3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 10 V Average Rectified Forward Current (At Rated VR, TL = 110°C) IO 2.0 A IFSM 160 A Tstg, TC TJ −55 to +125 °C dv/dt 10,000 V/ms Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient Symbol Min Pad 1 Inch Pad Unit RqJL RqJA 22 150 15 81 °C/W VF TJ = 25°C TJ = 100°C V 0.260 0.325 0.350 0.15 0.23 0.26 TJ = 25°C TJ = 100°C 0.25 0.70 40 60 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current IR (VR = 5.0 V) (VR = 10 V) mA 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. 100 VF @ 125°C 25°C 10 100°C 75°C 1 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 0.1 VF @ 125°C 25°C 10 100°C 75°C 1 0.1 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.05 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.15 0.25 0.35 0.45 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.55 MBRA210LT3 IR, REVERSE CURRENT (AMPS) 1.0E−01 IR @ 125°C 100°C 1.0E−02 75°C 1.0E−03 1.0E−04 25°C 1.0E−05 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) 3.5 RATED VOLTAGE APPLIED RqJL = 22 °C/W TJ = 125°C 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 90 95 100 105 110 115 120 125 130 TL, LEAD TEMPERATURE (°C) 0.9 0.8 TJ = 125°C dc 0.7 0.6 SQUARE WAVE 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 25°C f = 1 MHz 1000 100 1 2 3 4 2.5 3 Figure 5. Forward Power Dissipation 10,000 0 2 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating − Junction to Lead C, CAPACITANCE (pF) IF, AVERAGE FORWARD CURRENT (AMPS) dc PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Reverse Current 5 6 7 8 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance http://onsemi.com 3 9 10 3.5 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) MBRA210LT3 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Thermal Response, Junction to Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 1 0.1 0.02 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 MBRA210LT3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. HE E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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