MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Symbol MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 Collector Current − Continuous VCEO VCBO VEBO Value 2 EMITTER Unit Vdc 300 200 3 Vdc 300 200 1 2 Vdc 6.0 6.0 IC 500 mAdc SOT−23 (TO−236) CASE 318 STYLE 6 Symbol Max Unit MARKING DIAGRAMS 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA PD 1D M G G 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M1E M G G 1 1D = MMBTA42LT M1E = MMBTA43LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 10 1 Publication Order Number: MMBTA42LT1/D MMBTA42LT1G, MMBTA43LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 25 40 − − 40 40 − − − − 0.5 0.5 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) MMBTA42 MMBTA43 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBTA42 MMBTA43 Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MMBTA42 MMBTA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MMBTA42 MMBTA43 ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Both Types Both Types (IC = 30 mAdc, VCE = 10 Vdc) MMBTA42 MMBTA43 Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42 MMBTA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE VCE(sat) − Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42 MMBTA43 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 Ccb pF MMBTA42LT1G, MMBTA43LT1G TYPICAL CHARACTERISTICS 1000 1.2 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V TJ = 150°C 25°C 100 −55°C 10 0.1 1 10 100 −55°C 1 10 100 Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current −55°C 25°C 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 1 10 100 1.0 0.9 0.8 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.2 0.1 IC/IB = 10 0 0.1 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current Figure 4. Base−Emitter On Voltage vs. Collector Current 0 −0.4 100 VCE = 10 V −0.8 −1.2 −1.6 −2.0 qVB, for VBE 10 Cobo 1 −55°C to 150°C −2.4 −2.8 0.1 TJ = 25°C f = 1 MHz Cibo C, CAPACITANCE (pF) qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.2 Figure 1. DC Current Gain 0.5 0.4 25°C 0.4 IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.6 0.6 IC, COLLECTOR CURRENT (mA) 0.9 0.7 150°C 0.8 0.0 0.1 1.0 0.8 IC/IB = 10 1.0 1 100 10 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Capacitance http://onsemi.com 3 1000 MMBTA42LT1G, MMBTA43LT1G fTau, CURRENT−GAIN BANDWIDTH (MHz) TYPICAL CHARACTERISTICS 100 VCE = 20 V TJ = 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. Current−Gain — Bandwidth Product http://onsemi.com 4 100 MMBTA42LT1G, MMBTA43LT1G ORDERING INFORMATION Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA42LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA43LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MMBTA42LT1G, MMBTA43LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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