ONSEMI NJT4030PT1G

NJT4030P
Bipolar Power Transistors
PNP Silicon
Features
 Collector --Emitter Sustaining Voltage -





VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain -= 200 (Min) @ IC = 1.0 Adc
hFE
= 100 (Min) @ IC = 3.0 Adc
Low Collector --Emitter Saturation Voltage -VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
SOT--223 Surface Mount Packaging
Epoxy Meets UL 94, V--0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
SOT--223
CASE 318E
STYLE 1
AYW
4030PG
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb--Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
 Semiconductor Components Industries, LLC, 2010
September, 2010 -- Rev. 1
1
Publication Order Number:
NJT4030P/D
NJT4030P
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
40
Vdc
Collector--Base Voltage
VCB
40
Vdc
Emitter--Base Voltage
VEB
6.0
Vdc
Base Current -- Continuous
IB
1.0
Adc
Collector Current -- Continuous
Collector Current -- Peak
IC
3.0
5.0
Adc
Total Power Dissipation
Total PD @ TA = 25C mounted on 1” sq. (645 sq. mm) Collector pad on FR--4 bd material
Total PD @ TA = 25C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR--4 bd material
PD
Collector--Emitter Voltage
Operating and Storage Junction Temperature Range
TJ, Tstg
2.0
0.80
– 55 to + 150
W
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction--to--Case
-- Junction--to--Ambient on 1” sq. (645 sq. mm) Collector pad on FR--4 bd material
-- Junction--to--Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR--4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Symbol
Max
RθJA
RθJA
64
155
TL
260
Unit
C/W
C
ORDERING INFORMATION
Package
Shipping†
NJT4030PT1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
NJT4030PT3G
SOT--223
(Pb--Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NJT4030P
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
--
--
6.0
--
--
--
--
100
--
--
100
----
----
0.150
0.200
0.500
--
--
1.0
--
--
1.0
220
200
100
----
-400
--
--
40
--
--
130
--
--
160
--
Unit
OFF CHARACTERISTICS
Collector--Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter--Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCB = 40 Vdc)
ICBO
Emitter Cutoff Current
(VBE = 6.0 Vdc)
IEBO
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
Collector--Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 5.0 mAdc)
(IC = 1.0 Adc, IB = 10 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base--Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base--Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.5 Adc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 5.0 Vdc, f = 1.0 MHz)
Cib
Current--Gain -- Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.
2. fT = |hFE|  ftest
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3
pF
pF
MHz
NJT4030P
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (C)
Figure 1. Power Derating
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4
125
150
NJT4030P
TYPICAL CHARACTERISTICS
700
VCE = 1 V
150C
500
400
25C
300
--40C
200
100
150C
500
400
25C
300
--40C
200
100
0
0.001
0.01
0.1
1
0
10
1
Figure 3. DC Current Gain
10
--40C
0.1
0.01
0.001
0.01
0.1
1
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
1
150C
IC/IB = 50
150C
25C
0.01
10
0.001
VBE(on), EMITTER--BASE VOLTAGE (V)
IC = 2 A
1A
0.5 A
0.1 A
1.0E--02
0.1
1
10
Figure 5. Collector--Emitter Saturation Voltage
1
1.0E--04 1.0E--03
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Collector--Emitter Saturation Voltage
0.1
--40C
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
0.1
Figure 2. DC Current Gain
25C
0.01
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.001
0.001
IC, COLLECTOR CURRENT (A)
1
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
VCE = 4 V
600
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
1.0E--01
1.0E+00
1.2
1.1
VCE = 2 V
1.0
0.9
--40C
0.8
0.7
0.6
25C
0.5
0.4
0.3
0.2
0.1
0
150C
0.001
IB, BASE CURRENT (A)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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5
10
NJT4030P
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
IC/IB = 10
VBE(sat), EMITTER--BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER--BASE
SATURATION VOLTAGE (V)
TYPICAL CHARACTERISTICS
--40C
25C
150C
0.001
0.01
0.1
1
10
1.1
1.0
IC/IB = 50
0.9
--40C
0.8
0.7
0.6
25C
0.5
0.4
0.3
0.2
0.1
0
150C
0.001
0.01
Figure 8. Base--Emitter Saturation Voltage
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
100
250
200
150
100
50
0
0
1
2
3
4
5
40
20
0
5
10
15
20
25
30
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
35
10
TJ = 25C
ftest = 1 MHz
VCE = 10 V
140
120
100
80
60
40
20
0
60
VEB, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
160
TJ = 25C
ftest = 1 MHz
80
0
6
200
180
10
Figure 9. Base--Emitter Saturation Voltage
TJ = 25C
ftest = 1 MHz
300
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
350
0.1
0.001
0.01
0.1
1
0.5 ms
1 ms
1
10 ms
100 ms
0.1
0.01
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR--EMITTER VOLTAGE (V)
Figure 12. Current--Gain Bandwidth Product
Figure 13. Safe Operating Area
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6
100
NJT4030P
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
θ
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
θ
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
----------1.75
2.00
7.00
7.30
10
--
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
-----0.069
0.276
--
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-----0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
Sales Representative
NJT4030P/D