NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • • • • • • http://onsemi.com (3) hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device (2) Q1 Q2 (4) (5) (6) NST3946DP6T5G* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD Class 2 B Symbol Max Unit PD 240 1.9 mW mW/°C RqJA 520 °C/W PD 280 2.2 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 446 °C/W Characteristic (Dual Heated) (Note 3) Symbol Max Unit PD 350 2.8 mW mW/°C RqJA 357 °C/W PD 420 3.4 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Electrostatic Discharge (1) HBM MM *Q1 PNP Q2 NPN 6 Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) 2 3 SOT−963 CASE 527AD PLASTIC MARKING DIAGRAM L Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) 4 1 THERMAL CHARACTERISTICS Characteristic (Single Heated) 5 1 L M G MG G = Device Code (180° Clockwise Rotation) = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NST3946DP6T5G Package Shipping† SOT−963 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specifications Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 1 Publication Order Number: NST3946DP6/D NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 40 −40 − − 60 −40 − − 6.0 −5.0 − − − − 50 −50 40 70 100 60 30 − − 300 − − 60 80 100 60 30 − − 300 − − − − 0.2 0.3 − − −0.25 −0.4 0.65 − 0.85 0.95 −0.65 − −0.85 −0.95 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) (NPN) (PNP) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) (NPN) (PNP) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) (NPN) (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) (NPN) (PNP) V(BR)CEO V(BR)CBO V(BR)EBO ICEX Vdc Vdc Vdc nAdc ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) hFE (NPN) (PNP) VCE(sat) (NPN) (PNP) VBE(sat) (NPN) (PNP) 4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. http://onsemi.com 2 − Vdc Vdc NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 200 250 − − − − 4.0 4.5 − − 8.0 10.0 − − 5.0 4.0 Unit SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (NPN) (PNP) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (PNP) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (NPN) (PNP) fT MHz Cobo pF Cibo pF NF dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (NPN) (PNP) td − − 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = −10 mAdc, IB1 = −1.0 mAdc) (NPN) (PNP) tr − − 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = −3.0 Vdc, IC = −10 mAdc) (NPN) (PNP) ts − − 275 250 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) (NPN) (PNP) tf − − 50 50 ns ns NPN TRANSISTOR 400 IC/IB = 10 0.23 VCE(sat) = 150°C hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.28 0.18 25°C 0.13 −55°C 0.08 0.03 350 150°C (5.0 V) 300 150°C (1.0 V) 250 25°C (5.0 V) 200 25°C (1.0 V) 150 −55°C (5.0 V) 100 −55°C (1.0 V) 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 3 1 NST3946DP6T5G NPN TRANSISTOR 1.0 0.9 1.1 IC/IB = 10 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 8.0 Cibo, INPUT CAPACITANCE (pF) IC = 100 mA 1.6 1.4 80 mA 1.2 1.0 0.8 60 mA 0.6 40 mA 20 mA 0.0001 0.001 0.01 7.5 7.0 6.5 6.0 5.5 Cib 5.0 4.5 4.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 3.0 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −55°C 0.8 IC, COLLECTOR CURRENT (A) 1.8 0.2 0 0.9 IC, COLLECTOR CURRENT (A) 2.0 0.4 VCE = 2.0 V 1.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5.0 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 4 30 4.5 5.0 NST3946DP6T5G PNP TRANSISTOR 0.35 350 IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.40 VCE(sat) = 150°C 0.30 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C (5.0 V) 300 150°C (1.0 V) 250 200 25°C (5.0 V) 150 100 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 8. Collector Emitter Saturation Voltage vs. Collector Current 0.0001 0.01 0.001 0.1 IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current http://onsemi.com 5 1 NST3946DP6T5G PNP TRANSISTOR 0.9 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 1.0 1.1 IC/IB = 10 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Turn−On Voltage vs. Collector Current 9.0 100 mA 0.9 0.8 80 mA 0.7 60 mA 0.6 40 mA 0.5 0.4 0.3 20 mA 0.2 IC = 10 mA 0.0001 0.001 0.01 8.0 7.0 6.0 Cib 5.0 4.0 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 12. Saturation Region Figure 13. Input Capacitance 6.0 Cobo, OUTPUT CAPACITANCE (pF) 0.1 0 VCE = 2.0 V 1.0 IC, COLLECTOR CURRENT (A) 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Cob 0 5.0 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 14. Output Capacitance http://onsemi.com 6 30 4.5 5.0 NST3946DP6T5G PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE C D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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