BAT54TB6/ATB6/CTB6/STB6/DTB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS VOLTAGE 30 Volts POWER 200mWatts SOT-563 FEATURES Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed Very Low VF: 0.347V (Typ) at IF = 10mA In compliance with EU RoHS 2002/95/EC directives PRELIMINARY MECHANICAL DATA Case : SOT-563 plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.003 gram Marking : BAT54TB6 BAT54ATB6 TH TJ BAT54CTB6 BAT54STB6 TY T6 BAT54DTB6 TL ABSOLUTE RATINGS (each diode) Parameter Symbol Value Units VR 30 V VRRM 30 V IF 0.2 A Symbol Value Units Power Dissipation (Note 1) PTOT 200 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 Junction Temperature TJ -55 to 125 O Storage Temperature TSTG -55 to 150 O Maximum Reverse Voltage Peak Reverse Voltage Continuous Forward Current THERMAL CHARACTERISTICS Parameter O C/W C C NOTE: 1. FR-4 Board = 70 x 60 x 1mm. BAT54TB6 REV.0.3-JAN.15.2010 BAT54ATB6 BAT54CTB6 BAT54STB6 BAT54DTB6 PAGE . 1 BAT54TB6/ATB6/CTB6/STB6/DTB6 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) Parameter Symbol Reverse Breakdown Voltage V(BR) I R=100 uA MIN. TYP. MAX. Units 30 - - V IR VR=25 V - - 2.0 μA Forward Voltage VF I F=0.1mA I F=1.0mA I F=10mA I F=30mA I F=100mA - 0.347 - 0.24 0.32 0.40 0.50 1.00 V Total Capacitance CT VR=1V, f=1.0MHZ - - 10 pF Reverse Current mA ELECTRICAL CHARACTERISTICS CURVES 10 T J =75 C I R , Reverse Current(uA) O 1.0 J J 0.1 J T J =25 C O J 0.01 T J =-25 C O J 0.001 5 0 10 15 20 25 30 V R , Reverse Voltage(V) Fig. 1- Typical Reverse Leakage Fig. 2- Forward Characteristics 14 12 CT, Total Capacitance (pF) PRELIMINARY Test Condition 10 8 6 4 2 0 0 10 20 30 VR, Reverse Voltage (V) Fig. 3- Typical Total capacitance REV.0.3-JAN.15.2010 PAGE . 2