MMDT2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR VOLTAGE 60 Volts 200 mW POWER FEATURES • Complementary Pair • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • One MMDT2222A-Type NPN One MMDT2907A-Type PNP • Ideal for Low Power Amplification and Switching • Also Available in Lead Free Version • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363 • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Approx Weight: 0.006 grams • Device Marking : S0A 6 5 4 1 2 3 Fig.55 Maximum Ratings MMDT2222A Section @ TA=25OC unless otherwise specified Characteristic Symbol MMDT2222A Units Collector-Base Voltage V C BO 75 V Collector-Emitter Voltage V C EO 40 V Emitter-Base Voltage V EBO 6.0 V Collector Current-Continuous IC 600 mA Power Dissipation Pd 225 mW RΘJA 625 TJ,TSTG -55 to +150 Thermal Resistance, Junction to Ambient Operation and Storage and Temperature Range STAD-APR.25.2007 O C/W O C PAGE . 1 MMDT2227A Maximum Ratings MMDT2907A Section @ TA=25OC unless otherwise specified Characteristic Symbol MMDT2907A Units Collector-Base Voltage V C BO -60 V Collector-Emitter Voltage V C EO -60 V Emitter-Base Voltage V EBO -5.0 V Collector Current-Continuous IC -600 mA Power Dissipation Pd 200 mW RΘJA 625 TJ,TSTG -55 to +150 Thermal Resistance, Junction to Ambient Operation and Storage and Temperature Range STAD-APR.25.2007 O C/W O C PAGE . 2 MMDT2227A Electrical Characteristics, MMDT222A Section @ TA=25OC unless otherwise specified Characteristic Symbol Min. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 - V IC=-10µA,IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 - V IC=10mA,IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 - V IE=-10µA,IC=0 Collector Cutoff Current ICBO - 10 nA µA VCB=60V,IE=0 VCB=60V,IE=0,TA=150OC Collector Cutoff Current ICEX - 10 nA VCE=60V,VEB(OFF)=3.0V Emitter Cutoff Current IEBO - 100 nA VEB=3.0V,IC=0 Base Cutoff Current IBL - 20 nA VCE=60V,VEB(OFF)=3.0V hFE 35 50 75 100 40 50 50 300 - - IC=100µA,VCE=10V IC=1.0mA,VCE=10V IC=10mA,VCE=10V IC=150mA,VCE=10V IC=500mA,VCE=10V IC=10mA,VCE=10V,TA=-55OC IC=150mA,VCE=1.0V Collector-Emitter Saturation Voltage VCE(SAT) - 0.3 1.0 V IC=150mA,IB=15mA IC=500mA,IB=50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 - 1.2 2.0 V IC=150mA,IB=15mA IC=500mA,IB=50mA Output Capacitance C obo - 8 pF VCB=10V,f=1.0MHz,IE=0 Input Capacitance C i bo - 25 pF VEB=0.5V,f=1.0MHz,IC=0 fT 300 - MHz VCE=-20V,IC=20mA, f=100MHz NF - 4.0 dB VCE=10V,IC=100µA, RS=1.0kΩ,f=1.0KHz td - 10 ns tr - OFF CHARACTERISTICS(Note 2) ON CHARACTERISTICS(Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time STAD-APR.25.2007 VCC=30V,IC=150mA, VBE(OFF)=-0.5V,IB1=15mA 25 ns PAGE . 3 MMDT2227A Electrical Characteristics, MMDT2907A Section @ TA=25OC unless otherwise specified Characteristic Symbol Min. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 - V IC=-10µA,IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 - V IC=-10mA,IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - V IE=-10µA,IC=0 Collector Cutoff Current ICBO - -10 nA µA VCB=-50V,IE=0 VCB=-50V,IE=0,TA=125OC Collector Cutoff Current ICEX - -50 nA VCE=-30V,VEB(OFF)=-0.5V IBL - -50 nA VCE=-30V,VEB(OFF)=-0.5V hFE 75 100 100 100 50 300 - - IC=-100µA,VCE=-10V IC=-1.0mA,VCE=-10V IC=-10mA,VCE=-10V IC=-150mA,VCE=-10V IC=-500mA,VCE=-10V Collector-Emitter Saturation Voltage VCE(SAT) - -0.4 -1.6 V IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA Base-Emitter Saturation Voltage VBE(SAT) - -1.3 -2.6 V IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA Output Capacitance C obo - 8 pF VCB=-10V,f=1.0MHz,IE=0 Input Capacitance C i bo - 30 pF VEB=-2.0V,f=1.0MHz,IC=0 fT 200 - MHz VCE=-20V,IC=-50mA, f=100MHz Turn-On Time ton - 45 ns IC=-150mA,VCC=-30V, IB1=-15mA Delay Time td - 10 ns tr - OFF CHARACTERISTICS(Note 2) Base Cutoff Current ON CHARACTERISTICS(Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Rise Time STAD-APR.25.2007 VCC=-30V,IC=-150mA, IB1=-15mA 40 ns PAGE . 4 MMDT2227A 2.0 CAPACITANCE (pF) 20 VCE COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.0 0.1 1.0 Cibo 10 5.0 Cobo REVERSE VOLTS (V) Fig. 3 (2907A) Typical Capacitance STAD-APR.25.2007 -30 VCE COLLECTOR-EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 20 -10 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 2 (2222A) Typical Collector Saturation Region 30 -1.0 IC = 10mA 1.6 REVERSE VOLTS (V) Fig. 1 (2222A) Typical Capacitance 1.0 -0.1 IC = 1mA 0 0.001 50 10 IC = 30mA 1.8 1.6 IC = 10mA 1.4 IC = 300mA IC = 100mA IC = 1mA 1.2 IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB BASE CURRENT (mA) Fig. 4 (2907A) Typical Collector Saturation Region PAGE . 5 MMDT2227A MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 6