FAIRCHILD FFPF20UP30DNTU

FFPF20UP30DN
20 A, 300 V, Ultrafast Dual Diode
Features
Description
• Ultrafast Recovery trr = 45 ns (@ IF = 10 A)
• Max Forward Voltage, VF = 1.3 V (@ TC = 25°C)
The FFPF20UP30DN is an ultrafast dual diode with low
forward voltage drop and rugged UIS capability. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power switching
applications. It is specially suited for use in switching power
supplies and industrial applicationa as welder and UPS
application.
• Reverse Voltage, VRRM = 300 V
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Free-Wheeling Diode for Motor Application
1
3
2
1
1. Anode 2. Cathode 3. Anode
TO-220F
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings
Symbol
(per diode) Ta = 25°C unless otherwise noted
Rating
Parameter
Unit
VRRM
Peak Repetitive Reverse Voltage
300
V
VRWM
Working Peak Reverse Voltage
300
V
VR
DC Blocking Voltage
300
V
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
Thermal Characteristics T
a
Symbol
RθJC
10
A
100
A
- 65 to +150
°C
@ TC = 125°C
= 25°C unless otherwise noted
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
Unit
4.0
°C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FFPF20UP30DNTU
FFPF20UP30DN
TO-220F
Tube
N/A
N/A
30
©2005 Fairchild Semiconductor Corporation
FFPF20UP20DN Rev. C1
1
www.fairchildsemi.com
FFPF20UP30DN — Ultrafast Dual Diode
November 2013
Symbol
(per diode) Ta = 25°C unless otherwise noted
Parameter
Min.
Typ.
Max.
Unit
IF = 10 A
IF = 10 A
TC = 25 °C
TC = 150 °C
-
-
1.3
1.2
V
V
VR = 300 V
VR = 300 V
TC = 25 °C
TC = 150 °C
-
-
100
500
µA
µA
trr
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V IF
= 10 A, diF/dt = 200 A/µs, VR = 195 V
TC = 25 °C
TC = 25 °C
-
-
35
45
ns
ns
ta
tb
Qrr
IF =10 A, diF/dt = 200 A/µs, VR = 195 V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
11
13
20
-
ns
ns
nC
WAVL
Avalanche Energy (L = 20 mH)
20
-
-
mJ
VF
*
IR
*
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
FFPF20UP30DN Rev. C1
2
www.fairchildsemi.com
FFPF20UP30DN — Ultrafast Dual Diode
Electrical Characteristics
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
10
20
Reverse Current , I R [µA]
Forward Current , IF [A]
10
o
TC = 100 C
o
TC = 25 C
1
0.1
0.0
0.5
1.0
1.5
1
o
TC = 100 C
0.1
o
TC = 25 C
0.01
0.001
2.0
0
50
100
Figure 5. Typical Junction Capacitance
Reverse Recovery Time , trr [ns]
Capacitance , Cj [pF]
100
1
10
100
IF = 10 A
o
Tc = 25 C
32
28
24
100
200
Reverse Voltage , VR [V]
IF = 10 A
o
TC = 25 C
4
3
2
1
200
300
400
500
diF/dt [A/µs]
©2005 Fairchild Semiconductor Corporation
400
500
Figure 8. Forward Current Deration Curve
Average Rectified Forward Current, IF(AV) [A]
5
300
diF/dt [A/µs]
Figure 7. Typical Reverse Recovery Current
Reverse Recovery Current , Irr [A]
300
36
Typical Capacitance
at 0V = 197. 2 pF
FFPF20UP30DN Rev. C1
250
Figure 6. Typical Reverse Recovery Time
400
0
100
200
Reverse Voltage , VR [V]
Forward Voltage , VF [V]
10
0.1
150
3
14
12
10
8
DC
6
4
2
0
100
110
120
130
140
150
o
Case Temperature, TC [ C]
www.fairchildsemi.com
FFPF20UP30DN — Ultrafast Dual Diode
Typical Performance Characteristics
FFPF20UP30DN — Ultrafast Dual Diode
Package Dimensions
Figure 9. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2005 Fairchild Semiconductor Corporation
FFPF20UP30DN Rev. C1
4
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2009 Fairchild Semiconductor Corporation
FFPF20UP30DN Rev. C1
5
www.fairchildsemi.com
FFPF20UP30DN — Ultrafast Dual Diode
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