TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description ■ UL recognized (File # E90700) The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. ■ VDE recognized (File #102497 for white package) – Add option V (e.g., TIL111VM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematic ANODE 1 CATHODE 2 NC 3 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Package Outlines 6 BASE 5 COLLECTOR 4 EMITTER www.fairchildsemi.com TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units Storage Temperature All -40 to +150 °C TOPR Operating Temperature All -40 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C All 250 mW 2.94 mW/°C All 60 mA TIL111M 3 V TOTAL DEVICE TSTG PD Derate above 25°C EMITTER IF DC/Average Forward Input Current VR Reverse Input Voltage IF(pk) PD MOC8100M, TIL117M 6 Forward Current – Peak (300µs, 2% Duty Cycle) All 3 A LED Power Dissipation @ TA = 25 °C All 120 mW 1.41 mW/°C Derate above 25°C DETECTOR VCEO Collector-Emitter Voltage All 30 V VCBO Collector-Base Voltage All 70 V VECO Emitter-Collector Voltage TIL111M, TIL117M 7 V VEBO Emitter-Base Voltage All 7 Detector Power Dissipation @ TA = 25 °C All PD Derate above 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 150 mW 1.76 mW/°C www.fairchildsemi.com 2 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Absolute Maximum Ratings Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER VF IR Input Forward Voltage IF = 16mA TA = 25°C IF = 10mA for MOC8100M, IF = 16mA; for TIL117M TA = 0°C–70°C TA = -55°C TIL111M 1.2 1.4 MOC8100M, TIL117M 1.2 1.4 1.32 TA = +100°C Reverse Leakage Current VR = 3.0V VR = 6.0V V 1.10 TIL111M, TIL117M 0.001 10 µA MOC8100M 0.001 10 µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 All 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 10µA, IF = 0 All 70 120 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IF = 0 All 7 10 V BVECO Emitter-Collector Breakdown Voltage IF = 100µA, IF = 0 TIL111M, TIL117M 7 10 V Collector-Emitter Dark Current VCE = 10V, IF = 0 TIL111M, TIL117M 1 50 nA VCE = 5V, TA = 25°C MOC8100M 0.5 25 nA VCE = 30V, IF = 0, TA = 70°C TIL117M, MOC8100M 0.2 50 µA ICEO ICBO ICBO CCE Collector-Base Dark Current Capacitance VCB = 10V TIL111M, TIL117M 20 nA VCB = 5V MOC8100M 10 nA VCE = 0V, f = 1MHz All 8 pF *All Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 3 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) Transfer Characteristics Symbol Parameter Test Conditions Device Min Typ* Max Unit TIL117M 50 % MOC8100M 50 % DC CHARACTERISTICS CTRCE Current Transfer Ratio, Collector to Emitter IF = 10mA, VCE = 10V IF = 1mA, VCE = 5V IF = 1mA, VCE = 5V, TA = 0°C to +70°C IC(ON) On-State Collector Current (Phototransistor Operation) IF = 16mA, VCE = 0.4V On-State Collector Current (Photodiode Operation) IF = 16mA, VCB = 0.4V VCE (SAT) Collector-Emitter Saturation Voltage 30 TIL111M 2 mA 7 µA IC = 500µA, IF = 10mA TIL117M 0.4 IC = 2mA, IF = 16mA TIL111M 0.4 IC = 100µA, IF = 1mA MOC8100M 0.5 IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) MOC8100M 20 V AC CHARACTERISTICS TON Turn-On Time TOFF Turn-Off Time tr TIL117M 10 MOC8100M 20 TIL117M 10 Rise Time MOC8100M 2 TIL117M 2 tf Fall Time tr Rise Time (Phototransistor Operation) tf Fall Time (Phototransistor Operation) IC(ON) = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) TIL111M µs µs µs 10 µs Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 VAC(rms) RISO Isolation Resistance VI-O = 500 VDC 1011 Ω CISO Isolation Capacitance VI-O = 0, f = 1MHz 0.2 pF *All Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 4 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 5 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Safety and Insulation Ratings Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized CTR vs. Forward Current 1.8 1.6 VCE = 5.0V TA = 25˚C 1.7 1.6 Normalized to IF = 10mA 1.2 1.5 1.0 NORMALIZED CTR VF – FORWARD VOLTAGE (V) 1.4 1.4 TA = -55°C 1.3 TA = 25°C 1.2 0.8 0.6 0.4 TA = 100°C 0.2 1.1 0.0 1.0 1 10 0 100 2 4 6 8 10 12 14 16 18 20 IF – FORWARD CURRENT (mA) IF – LED FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 Fig. 4 CTR vs. RBE (Unsaturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.2 IF = 5mA NORMALIZED CTR 1.0 IF = 10mA 0.8 IF = 20mA 0.6 0.4 Normalized to: IF = 10mA TA = 25˚C 0.2 -60 -40 1.0 0.9 IF = 20mA 0.8 IF = 10mA IF = 5mA 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5.0V 0.1 0.0 10 -20 0 20 40 60 80 100 1000 RBE – BASE RESISTANCE (kΩ) 100 TA – AMBIENT TEMPERATURE (˚C) Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 VCE = 0.3V IF = 20mA 0.7 0.6 0.5 IF = 10mA 0.4 0.3 IF = 5mA 0.2 0.1 0.0 10 100 1000 RBE – BASE RESISTANCE (kΩ) 100 TA = 25˚C 10 1 IF = 2.5mA 0.1 IF = 20mA 0.01 IF = 5mA 0.001 0.01 IF = 10mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 6 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Characteristics Fig. 7 Switching Speed vs. Load Resistor 1000 Fig. 8 Normalized ton vs. RBE IF = 10mA VCC = 10V TA = 25˚C NORMALIZED ton – (ton(RBE) / ton(open)) 5.0 SWITCHING SPEED (µs) 100 Tf Toff 10 Ton Tr 1 VCC = 10V IC = 2mA RL = 100Ω 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 100 0.1 0.1 1 10 1000 10000 100000 RBE – BASE RESISTANCE (kΩ) 100 R – LOAD RESISTOR (kΩ) Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE ICEO – COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff – (toff(RBE) / toff(open)) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 VCC = 10V IC = 2mA RL = 100Ω 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCE = 10V TA = 25°C 1000 100 10 1 0.1 0.01 0.001 0 20 40 60 80 100 RBE – BASE RESISTANCE (kΩ) TA – AMBIENTTEMPERATURE (°C) TEST CIRCUIT WAVEFORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2mA Figure 11. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 7 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Characteristics (Continued) Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 8 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option TIL111M S TIL111SM SR2 TIL111SR2M T TIL111TM 0.4" Lead Spacing V TIL111VM VDE 0884 TV TIL111TVM VDE 0884, 0.4" Lead Spacing SV TIL111SVM VDE 0884, Surface Mount SR2V TIL111SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 TIL111 2 X YY Q 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 9 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 10 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers Carrier Tape Specification Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 www.fairchildsemi.com 11 TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.