SAMSUNG K7N643645M

K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
72Mb NtRAMTM Specification
100TQFP/165FBGA with Pb/Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Document Title
2Mx36 & 4Mx18-Bit Pipelined NtRAMTM
Revision History
History
Draft Date
Remark
0.0
1. Initial document.
Sep. 30. 2002
Advance
0.1
1. Delete the speed bins (FT : 7.5ns, 8.5ns / PP : 200MHz)
Oct. 8. 2002
Preliminary
0.2
1. Change to the New JTAG scan order.
Feb. 25, 2003
Preliminary
0.3
1. Add the comment about Vdd/Vddq wide by note on page 13.
Mar. 10, 2003
Preliminary
0.4
1. Delete the 119 BGA package type.
Aug. 18, 2004
Preliminary
0.5
1. Delete the 1.8V and 3.3V Vdd voltage level
( Change the part number to K7N6436(18)45M from K7N6436(18)31M )
Oct. 20, 2004
Preliminary
0.6
1. Add the overshoot timing
Feb. 16, 2006
Final
1.0
1. Change ordering information
Apr. 03, 2006
Final
1.1
1. Add the current in the DC Elecrical Characteristics
Feb. 27, 2007
Final
1.2
1. change standby current value
Mar. 25, 2008
Final
1.3
1. Correct typo
Sep. 03, 2008
Final
Rev. No.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-2-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
72Mb NtRAM (Pipelined) Ordering Information
Org.
4Mx18
2Mx36
VDD (V)
Speed (ns)
Access Time (ns)
Part Number
RoHS Avail.
2.5
4.0
2.6
K7N641845M-P(Q,E,F)1C(I)225
√
2.5
6.0
3.5
K7N641845M-P(Q,E,F)1C(I)216
√
2.5
4.0
2.6
K7N643645M-P(Q,E,F)1C(I)225
√
2.5
6.0
3.5
K7N643645M-P(Q,E,F)1C(I)216
√
Note 1. P(Q,E,F) [Package type] : 100TQFP ; P-Pb Free, Q-Pb, 165FBGA ; E-Pb Free, F-Pb
2. C(I) [Operating Temperature] : C-Commercial, I-Industrial
-3-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
2Mx36 & 4Mx18-Bit Pipelined NtRAMTM
FEATURES
GENERAL DESCRIPTION
• 2.5V ±5% Power Supply.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A.
• 165FBGA(11x15 ball aray) with body size of 15mmx17mm.
The K7N643645M and K7N641845M are 75,497,472-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, pipelined SRAM output data is temporarily
stored by an edge triggered output register and then released
to the output buffers at the next rising edge of clock.
The K7N643645M and K7N641845M are implemented with
SAMSUNG′s high performance CMOS technology and is available in 100pin TQFP and 165FBGA packages. Multiple power
and ground pins minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Symbol
-25
-16
Unit
tCYC
4.0
6.0
ns
Clock Access Time
tCD
2.6
3.5
ns
Output Enable Access Time
tOE
2.6
3.5
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:20]or
A [0:21]
CKE
ADDRESS
REGISTER A2~A20 or A2~A21
CONTROL
LOGIC
CLK
BURST
ADDRESS
COUNTER
A0~A1
ADV
WE
BWx
(x=a,b,c,d or a,b)
CONTROL
REGISTER
CS1
CS2
CS2
WRITE
ADDRESS
REGISTER
K
A′0~A′1
WRITE
ADDRESS
REGISTER
2Mx36, 4Mx18
MEMORY
ARRAY
K
DATA-IN
REGISTER
K
DATA-IN
REGISTER
CONTROL
LOGIC
K
OUTPUT
REGISTER
BUFFER
OE
ZZ
36 or 18
DQa0 ~ DQd7 or DQa0 ~ DQb8
DQPa ~ DQPd
NtRAMTM and No Turnaround Random Access Memory are trademarks of Samsung.
-4-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
VSS
CLK
WE
CKE
OE
ADV
A18
A17
A8
A9
88
87
86
85
84
83
82
81
BWa
93
89
BWb
94
90
BWc
95
CS2
BWd
96
VDD
CS2
97
91
CS1
98
92
A6
A7
99
100 Pin TQFP
(20mm x 14mm)
38
39
40
41
42
43
44
45
46
47
48
49
50
N.C.
N.C.
VSS
VDD
A20
A19
A10
A11
A12
A13
A14
A15
A16
35
A2
37
34
A3
A0
33
A4
36
32
A1
31
K7N643645M(2Mx36)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
DQPc
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
VDD
VDD
VDD
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb7
DQb6
VDDQ
VSSQ
DQb5
DQb4
DQb3
DQb2
VSSQ
VDDQ
DQb1
DQb0
VSS
VDD
VDD
ZZ
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa
PIN NAME
SYMBOL
PIN NAME
A0 - A20
Address Inputs
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx(x=a,b,c,d)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
TQFP PIN NO.
SYMBOL
32,33,34,35,36,37,42,
43,44,45,46,47,48,49,
50,81,82,83,84,99,
100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
PIN NAME
TQFP PIN NO.
VDD
VSS
Power Supply(2.5V)
Ground
14,15,16,41,65,66,91
17,40,67,90
N.C.
No Connect
38,39
DQa0~a7
DQb0~b7
DQc0~c7
DQd0~d7
DQPa~Pd
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
VDDQ
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V)
Output Ground
5,10,21,26,55,60,71,76
VSSQ
Note : 1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-5-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
VSS
CLK
WE
CKE
OE
ADV
A19
A18
A8
A9
90
89
88
87
86
85
84
83
82
81
BWa
93
CS2
BWb
94
VDD
N.C.
95
91
CS2
N.C.
97
92
CS1
98
96
A6
A7
99
100 Pin TQFP
(20mm x 14mm)
39
40
41
42
43
44
45
46
N.C.
VSS
VDD
A21
A20
A11
A12
A13
50
38
N.C.
A17
37
A0
49
36
A1
A16
35
A2
48
34
A3
A15
33
A4
47
32
A14
31
K7N641845M(4Mx18)
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
LBO
N.C.
N.C.
N.C.
VDDQ
VSSQ
N.C.
N.C.
DQb8
DQb7
VSSQ
VDDQ
DQb6
DQb5
VDD
VDD
VDD
VSS
DQb4
DQb3
VDDQ
VSSQ
DQb2
DQb1
DQb0
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
100
PIN CONFIGURATION(TOP VIEW)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A10
N.C.
N.C.
VDDQ
VSSQ
N.C.
DQa0
DQa1
DQa2
VSSQ
VDDQ
DQa3
DQa4
VSS
VDD
VDD
ZZ
DQa5
DQa6
VDDQ
VSSQ
DQa7
DQa8
N.C.
N.C.
VSSQ
VDDQ
N.C.
N.C.
N.C.
PIN NAME
SYMBOL
PIN NAME
A0 - A21
Address Inputs
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
TQFP PIN NO.
SYMBOL
32,33,34,35,36,37,42,
43,44,45,46,47,48,49,
50,80,81,82,83,84,99,
100
85
88
89
87
98
97
92
93,94
86
64
31
PIN NAME
TQFP PIN NO.
VDD
VSS
Power Supply(2.5V)
Ground
14,15,16,41,65,66,91
17,40,67,90
N.C.
No Connect
1,2,3,6,7,25,28,29,30,
38,39,51,52,53,56,57,
75,78,79,95,96
DQa0~a8
DQb0~b8
Data Inputs/Outputs
Data Inputs/Outputs
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
VDDQ
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V)
Output Ground
5,10,21,26,55,60,71,76
VSSQ
NOTE : A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-6-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
165-PIN FBGA PACKAGE CONFIGURATIONS(TOP VIEW)
K7N643645M(2Mx36)
1
2
3
4
5
6
7
8
9
10
11
A
NC**
A
CS1
BWc
BWb
CS2
CKE
ADV
A
A
NC
B
NC
A
CS2
BWd
BWa
CLK
WE
OE
A
A
NC**
C
DQPc
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
DQPb
D
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
E
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
F
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
G
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
H
NC
VDD
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
ZZ
J
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
K
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
L
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
M
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
N
DQPd
NC
VDDQ
VSS
NC
NC
NC
VSS
VDDQ
NC
DQPa
P
NC
A
A
A
TDI
A1*
TDO
A
A
A
NC
R
LBO
A
A
A
TMS
A0*
TCK
A
A
A
A
Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
** Checked NoConnect(NC) pins are resered for higher density address, i.e. 11B for 128Mb and 1A for 256Mb.
PIN NAME
SYMBOL
PIN NAME
A
Address Inputs
A0,A1
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx
(x=a,b,c,d)
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
OE
ZZ
LBO
Output Enable
Power Sleep Mode
Burst Mode Control
TCK
TMS
TDI
TDO
JTAG Test Clock
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Data Output
SYMBOL
PIN NAME
VDD
VSS
Power Supply
Ground
N.C.
No Connect
DQa
DQb
DQc
DQd
DQPa~Pd
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
VDDQ
Output Power Supply
-7-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
165-PIN FBGA PACKAGE CONFIGURATIONS(TOP VIEW)
K7N641845M(4Mx18)
1
2
3
4
5
6
7
8
9
10
11
A
NC**
A
CS1
BWb
NC
CS2
CKE
ADV
A
A
A
B
NC
A
CS2
NC
BWa
CLK
WE
OE
A
A
NC**
C
NC
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
DQPa
D
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
H
NC
VDD
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
ZZ
J
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
L
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
M
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
N
DQPb
NC
VDDQ
VSS
NC
NC
NC
VSS
VDDQ
NC
NC
P
NC
A
A
A
TDI
A1*
TDO
A
A
A
NC
R
LBO
A
A
A
TMS
A0*
TCK
A
A
A
A
Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
** Checked NoConnect(NC) pins are resered for higher density address, i.e. 11B for 128Mb and 1A for 256Mb.
PIN NAME
SYMBOL
PIN NAME
A
Address Inputs
A0,A1
ADV
WE
CLK
CKE
CS1
CS2
CS2
BWx
(x=a,b)
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
OE
ZZ
LBO
Output Enable
Power Sleep Mode
Burst Mode Control
TCK
TMS
TDI
TDO
JTAG Test Clock
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Data Output
SYMBOL
PIN NAME
VDD
VSS
Power Supply
Ground
N.C.
No Connect
DQa
DQb
DQPa, Pb
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
VDDQ
Output Power Supply
-8-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
FUNCTION DESCRIPTION
The K7N643645M and K7N641845M are NtRAMTM designed to sustain 100% bus bandwidth by eliminating turnaround cycle when
there is transition from Read to Write, or vice versa.
All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAMTM latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables(CS1, CS2, CS2)
are active .
Output Enable(OE) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables(CS1, CS2, CS2) are active, the write enable input signals WE are driven
high, and ADV driven low.The internal array is read between the first rising edge and the second rising edge of the clock and the data
is latched in the output register. At the second clock edge the data is driven out of the SRAM. Also during read operation OE must
be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The pipelined NtRAMTM uses a late-late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required two cycle
later.
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up
time.
BURST SEQUENCE TABLE
LBO PIN
HIGH
First Address
Fourth Address
(Interleaved Burst, LBO=High)
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
0
1
1
Case 3
A0
1
0
1
0
A1
1
1
0
0
Case 4
A0
0
1
0
1
BQ TABLE
LBO PIN
A1
1
1
0
0
A0
1
0
1
0
(Linear Burst, LBO=Low)
LOW
First Address
Fourth Address
Case 1
A1
0
0
1
1
Case 2
A0
0
1
0
1
A1
0
1
1
0
Case 3
A0
1
0
1
0
A1
1
1
0
0
Case 4
A0
0
1
0
1
A1
1
0
0
1
A0
1
0
1
0
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.
-9-
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
STATE DIAGRAM FOR NtRAMTM
WRITE
READ
READ
BEGIN
READ
BEGIN
WRITE
DS
RE
AD
I
WR
DS
W
R
IT
E
ST
BUR
D
DS
TE
EA
R
BURST
DS
BURST
READ
BURST
WRITE
COMMAND
READ
WRI
DESELECT
DS
BURST
TE
BUR
ST
D
REA
DS
WRITE
BURST
ACTION
DESELECT
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
- 10 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
CS1
CS2
CS2
ADV
WE
BWx
OE
CKE
CLK
ADDRESS ACCESSED
OPERATION
H
X
X
L
X
X
X
L
↑
N/A
Not Selected
X
L
X
L
X
X
X
L
↑
N/A
Not Selected
X
X
H
L
X
X
X
L
↑
N/A
Not Selected
X
X
X
H
X
X
X
L
↑
N/A
Not Selected Continue
L
H
L
L
H
X
L
L
↑
External Address
Begin Burst Read Cycle
X
X
X
H
X
X
L
L
↑
Next Address
Continue Burst Read Cycle
L
H
L
L
H
X
H
L
↑
External Address
NOP/Dummy Read
X
X
X
H
X
X
H
L
↑
Next Address
Dummy Read
L
H
L
L
L
L
X
L
↑
External Address
Begin Burst Write Cycle
X
X
X
H
X
L
X
L
↑
Next Address
Continue Burst Write Cycle
L
H
L
L
L
H
X
L
↑
N/A
NOP/Write Abort
X
X
X
H
X
H
X
L
↑
Next Address
Write Abort
X
X
X
X
X
X
X
H
↑
Current Address
Ignore Clock
Notes : 1. X means "Don′t Care".
2. The rising edge of clock is symbolized by (↑).
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
WRITE TRUTH TABLE(x36)
WE
BWa
BWb
BWc
BWd
OPERATION
H
X
X
X
X
READ
L
L
H
H
H
WRITE BYTE a
L
H
L
H
H
WRITE BYTE b
L
H
H
L
H
WRITE BYTE c
L
H
H
H
L
WRITE BYTE d
L
L
L
L
L
WRITE ALL BYTEs
L
H
H
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
WRITE TRUTH TABLE(x18)
WE
BWa
BWb
OPERATION
H
X
X
READ
L
L
H
WRITE BYTE a
L
H
L
WRITE BYTE b
L
L
L
WRITE ALL BYTEs
L
H
H
WRITE ABORT/NOP
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
- 11 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
ASYNCHRONOUS TRUTH TABLE
OPERATION
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 3.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
Storage Temperature
PD
1.6
W
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS(0°C ≤ TA ≤ 70°C)
PARAMETER
Supply Voltage
Ground
SYMBOL
MIN
Typ.
MAX
UNIT
VDD
2.375
2.5
2.625
V
VDDQ
2.375
2.5
2.625
V
VSS
0
0
0
V
*Note : VDD and VDDQ must be supplied with identical vlotage levels.
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDITION
TYP
MAX
UNIT
CIN
VIN=0V
-
TBD
pF
COUT
VOUT=0V
-
TBD
pF
*Note : Sampled not 100% tested.
- 12 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
DC ELECTRICAL CHARACTERISTICS(VDD=2.5V ±5%, TA=0°C to +70°C)
PARAMETER
SYMBOL
Input Leakage Current(except ZZ)
IIL
VDD=Max ; VIN=VSS to VDD
Output Leakage Current
IOL
Output Disabled,
Operating Current
ICC
ISB
TEST CONDITIONS
ISB1
ISB2
MAX
UNIT
-2
+2
µA
µA
-2
+2
VDD=Max IOUT=0mA
-25
-
470
Cycle Time ≥ tCYC Min
-16
-
350
Device deselected, IOUT=0mA,
-25
-
200
-16
-
200
-
170
mA
-
170
mA
ZZ≤VIL, f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V
Standby Current
MIN
Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
All Inputs=fixed (VDD-0.2V or 0.2V)
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH
mA
NOTES
1,2
mA
Output Low Voltage
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage
VOH
IOH=-1.0mA
2.0
-
V
Input Low Voltage
VIL
-0.3*
0.7
V
Input High Voltage
VIH
1.7
VDD+0.3**
V
3
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
Overshoot Timing
Undershoot Timing
20% tCYC(MIN)
VIH
VDDQ+1.0V
VDDQ+0.5V
VSS
VDDQ
VSS-0.5V
VSS-1.0V
20% tCYC(MIN)
VIL
TEST CONDITIONS
(TA=0 to 70°C, VDD=2.5V ±5%, unless otherwise specified)
PARAMETER
Input Pulse Level
Input Rise and Fall Time(Measured at 20% to 80%)
Input and Output Timing Reference Levels
Output Load
VALUE
0 to 2.5V
1.0V/ns
VDDQ/2
See Fig. 1
Output Load(B),
(for tLZC, tLZOE, tHZOE & tHZC)
+2.5V
Output Load(A)
Dout
RL=50Ω
Zo=50Ω
VL=VDDQ/2
30pF*
Dout
1538Ω
1667Ω
5pF*
* Including Scope and Jig Capacitance
Fig. 1
- 13 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
AC TIMING CHARACTERISTICS
(VDD=2.5V ±5%, TA=0 to 70°C)
PARAMETER
SYMBOL
-25
-16
MIN
MAX
MIN
MAX
UNIT
Cycle Time
tCYC
4.0
-
6.0
-
ns
Clock Access Time
tCD
-
2.6
-
3.5
ns
Output Enable to Data Valid
tOE
-
2.6
-
3.5
ns
Clock High to Output Low-Z
tLZC
1.5
-
1.5
-
ns
Output Hold from Clock High
tOH
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
tLZOE
0
-
0
-
ns
Output Enable High to Output High-Z
tHZOE
-
2.6
-
3.0
ns
Clock High to Output High-Z
tHZC
-
2.6
-
3.0
ns
Clock High Pulse Width
tCH
1.7
-
2.2
-
ns
Clock Low Pulse Width
tCL
1.7
-
2.2
-
ns
Address Setup to Clock High
tAS
1.2
-
1.5
-
ns
CKE Setup to Clock High
tCES
1.2
-
1.5
-
ns
Data Setup to Clock High
tDS
1.2
-
1.5
-
ns
Write Setup to Clock High (WE, BWX)
tWS
1.2
-
1.5
-
ns
Address Advance Setup to Clock High
tADVS
1.2
-
1.5
-
ns
Chip Select Setup to Clock High
tCSS
1.2
-
1.5
-
ns
Address Hold from Clock High
tAH
0.3
-
0.5
-
ns
CKE Hold from Clock High
tCEH
0.3
-
0.5
-
ns
Data Hold from Clock High
tDH
0.3
-
0.5
-
ns
Write Hold from Clock High (WE, BWX)
tWH
0.3
-
0.5
-
ns
Address Advance Hold from Clock High
tADVH
0.3
-
0.5
-
ns
Chip Select Hold from Clock High
tCSH
0.3
-
0.5
-
ns
ZZ High to Power Down
tPDS
2
-
2
-
cycle
ZZ Low to Power Up
tPUS
2
-
2
-
cycle
Notes : 1. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges
when ADV is sampled low and CS is sampled low.
All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
3. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
4. To avoid bus contention, At a given voltage and temperature tLZC is more than tHZC.
The specs as shown do not imply bus contention because tLZC is a Min. parameter that is worst case at totally different test conditions
(0°C,2.625V) than tHZC, which is a Max. parameter(worst case at 70°C,2.375V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
- 14 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pending operations are completed. similarly, when exiting SLEEP MODE during tPUS, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
ZZ ≥ VIH
Current during SLEEP MODE
MIN
ISB2
MAX
170
ZZ active to input ignored
tPDS
2
ZZ inactive to input sampled
tPUS
2
ZZ active to SLEEP current
tZZI
ZZ inactive to exit SLEEP current
tRZZI
UNITS
mA
cycle
cycle
2
cycle
0
SLEEP MODE WAVEFORM
K
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
DON′T CARE
- 15 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
This part contains an IEEE standard 1149.1 Compatible Test Access Port(TAP). The package pads are monitored by the Serial Scan
circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not
driven out of the SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up,
therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without
interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an
undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be
tied to VDD through a resistor. TDO should be left unconnected.
JTAG Block Diagram
JTAG Instruction Coding
IR2 IR1 IR0
0
SRAM
CORE
TDI
BYPASS Reg.
TDO
Identification Reg.
Instruction Reg.
Control Signals
TMS
TCK
TAP Controller
0
0
TDO Output
Notes
EXTEST
Instruction
Boundary Scan Register
1
0
0
1
IDCODE
Identification Register
3
0
1
0
SAMPLE-Z
Boundary Scan Register
2
0
1
1
BYPASS
Bypass Register
4
1
0
0
SAMPLE
Boundary Scan Register
5
1
0
1
RESERVED
Do Not Use
6
1
1
0
BYPASS
Bypass Register
4
1
1
1
BYPASS
Bypass Register
4
NOTE :
1. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs. This instruction is not IEEE 1149.1 compliant.
2. Places DQs in Hi-Z in order to sample all input data regardless of other
SRAM inputs.
3. TDI is sampled as an input to the first ID register to allow for the serial shift
of the external TDI data.
4. Bypass register is initiated to VSS when BYPASS instruction is invoked. The
Bypass Register also holds serially loaded TDI when exiting the Shift DR
states.
5. SAMPLE instruction dose not places DQs in Hi-Z.
6. This instruction is reserved for future use.
TAP Controller State Diagram
1
Test Logic Reset
0
0
Run Test Idle
1
1
1
Select DR
0
1
Capture DR
0
Shift DR
1
Exit2 DR
1
Update DR
0
- 16 -
Select IR
0
1
Capture IR
0
0
1
Exit1 DR
0
Pause DR
1
1
1
0
0
Shift IR
1
0
Exit1 IR
0
Pause IR
1
Exit2 IR
1
Update IR
1
0
0
0
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
SCAN INFORMATION (165 FBGA )
SCAN REGISTER DEFINITION
Part
Instruction Register
Bypass Register
ID Register
Boundary Scan
2Mx36
3 bits
1 bits
32 bits
89 bits
4Mx18
3 bits
1 bits
32 bits
89 bits
ID REGISTER DEFINITION
Part
Revision Number
(31:28)
Part Configuration
(27:18)
Vendor Definition
(17:12)
Samsung JEDEC Code
(11: 1)
2Mx36
0000
01001 00100
XXXXXX
00001001110
1
4Mx18
0000
01010 00011
XXXXXX
00001001110
1
Start Bit(0)
BOUNDARY SCAN EXIT ORDER
BIT
PIN ID
BIT
PIN ID
BIT
PIN ID
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
6N
7N
10N
11P
8P
8R
9R
9P
10P
10R
11R
11H
11N
11M
11L
11K
11J
10M
10L
10K
10J
9H
10H
11G
11F
11E
11D
10G
10F
10E
10D
11C
11A
11B
10A
10B
9A
9B
10C
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
8A
8B
7A
7B
6B
6A
5B
5A
4A
4B
3B
3A
2A
2B
2C
1B
1A
1C
1D
1E
1F
1G
2D
2E
2F
2G
1H
3H
1J
1K
1L
1M
2J
2K
2L
2M
1N
2N
1P
79
80
81
82
83
84
85
86
87
88
89
1R
2R
3P
3R
2P
4R
4P
5N
6P
6R
Internal
BIT
PIN ID
Note: 1. NC and Vss pins included in the scan exit order are read as "X" ( i.e. don′t care).
- 17 -
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
JTAG DC OPERATING CONDITIONS
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
Parameter
VDD
2.375
2.5
2.625
V
Input High Level
VIH
1.7
-
VDD+0.3
V
Input Low Level
VIL
-0.3
-
0.7
V
Output High Voltage
VOH
2.0
-
-
V
Output Low Voltage
VOL
-
-
0.4
V
Note
NOTE : The input level of SRAM pin is to follow the SRAM DC specification.
JTAG AC TEST CONDITIONS
Symbol
Min
Unit
Input High/Low Level
Parameter
VIH/VIL
2.5/0
V
Input Rise/Fall Time
TR/TF
1.0/1.0
ns
VDDQ/2
V
Input and Output Timing Reference Level
Note
JTAG AC Characteristics
Symbol
Min
Max
Unit
TCK Cycle Time
Parameter
tCHCH
50
-
ns
TCK High Pulse Width
tCHCL
20
-
ns
TCK Low Pulse Width
tCLCH
20
-
ns
TMS Input Setup Time
tMVCH
5
-
ns
TMS Input Hold Time
tCHMX
5
-
ns
TDI Input Setup Time
tDVCH
5
-
ns
TDI Input Hold Time
tCHDX
5
-
ns
SRAM Input Setup Time
tSVCH
5
-
ns
SRAM Input Hold Time
tCHSX
5
-
ns
Clock Low to Output Valid
tCLQV
0
10
ns
Note
JTAG TIMING DIAGRAM
TCK
tCHCH
tCHCL
tMVCH
tCHMX
tDVCH
tCHDX
tSVCH
tCHSX
tCLCH
TMS
TDI
PI
(SRAM)
tCLQV
TDO
- 18 -
Rev. 1.3 September 2008
- 19 -
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
A1
tADVH
tCSH
tWH
tAH
tLZOE
tOE
Q1-1
A2
tHZOE
tCEH
Q2-1
tCD
tOH
tCYC
Q2-2
tCL
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tADVS
tCSS
tWS
tAS
tCES
tCH
Q2-3
A3
TIMING WAVEFORM OF READ CYCLE
Q2-4
Q3-1
Q3-2
Q3-3
Undefined
Don′t Care
Q3-4
tHZC
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Rev. 1.3 September 2008
- 20 -
Data Out
Data In
OE
ADV
CS
WRITE
Address
CKE
Clock
Q0-4
tHZOE
D1-1
A2
tCYC
tCL
D2-1
D2-2
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Q0-3
A1
tCES tCEH
tCH
D2-3
A3
TIMING WAVEFORM OF WRTE CYCLE
D2-4
D3-1
tDS
D3-2
tDH
D3-3
Undefined
Don′t Care
D3-4
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Rev. 1.3 September 2008
- 21 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
tOE
tLZOE
A2
Q1
A3
tDS
D2
tDH
Q3
A4
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
A1
tCES tCEH
A5
Q4
A6
D5
A7
TIMING WAVEFORM OF SINGLE READ/WRITE
tCH
Q6
tCYC
tCL
A8
Q7
A9
Undefined
Don′t Care
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Rev. 1.3 September 2008
- 22 -
Data In
A1
tCES tCEH
tCD
tLZC
A2
Q1
tHZC
A3
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
tDS
A4
D2
TIMING WAVEFORM OF CKE OPERATION
tDH
tCH
Q3
tCYC
tCL
A5
Q4
A6
Undefined
Don′t Care
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Rev. 1.3 September 2008
- 23 -
Data In
Data Out
OE
ADV
CS
WRITE
Address
CKE
Clock
A1
tCEH
tOE
tLZOE
A2
Q1
Q2
tHZC
A3
NOTES : WRITE = L means WE = L, and BWx = L
CS = L means CS1 = L, CS2 = H and CS2 = L
CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L
tCES
D3
tDS tDH
A4
tCD
tLZC
TIMING WAVEFORM OF CS OPERATION
Q4
A5
tCH
tCYC
tCL
D5
Undefined
Don′t Care
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
PACKAGE DIMENSIONS
100-TQFP-1420A
Units ; millimeters/Inches
0~8°
22.00 ±0.30
0.10
0.127 +- 0.05
20.00 ±0.20
16.00 ±0.30
0.10 MAX
14.00 ±0.20
(0.83)
0.50 ±0.10
#1
0.65
(0.58)
0.30 ±0.10
0.10 MAX
1.40 ±0.10 1.60 MAX
0.50 ±0.10
- 24 -
0.05 MIN
Rev. 1.3 September 2008
K7N643645M
K7N641845M
2Mx36 & 4Mx18 Pipelined NtRAMTM
165 FBGA PACKAGE DIMENSIONS
15mm x 17mm Body, 1.0mm Bump Pitch, 11x15 Ball Array
A
B
Top View
C
D
Side View
A
F
E
G
B
Bottom View
∅H
E
Symbol
Value
Units
Symbol
Value
Units
A
17 ± 0.1
mm
Note
E
1.0
mm
B
15 ± 0.1
mm
F
14.0
mm
C
1.3 ± 0.1
mm
G
10.0
mm
D
0.35 ± 0.05
mm
H
0.50 ± 0.05
mm
- 25 -
Note
Rev. 1.3 September 2008