SAMSUNG S1T8507C

COMPANDER
S1T8507C
INTRODUCTION
20−DIP−300A
S1T8507C is a automatic gain control system that is used for dynamic
range compression and expansion.
By companding the signal , this can reduce the noise components.
S1T8507C includes compressor, expander, pre-amp, filter amp, limiter
and mute/bypath logic.
FEATURES
20−SOP−375
•
Wide Supply Voltage ( 2.4 to 7V )
•
Easy Gain Control
•
Mute/Bypath Logic
•
Data In/Out Pin
ORDERING INFORMATION
Device
Package
S1T8507C01-D0B0
20−DIP−300A
S1T8507C01-S0B0
20−SOP−375
Operating Temperature
−20°C to +70°C
1
S1T8507C
COMPANDER
BLOCK DIAGRAM
AGIC
CRC
DI
CO
FI
5
6
4
3
2
Filter Amp
Rectifier
Compressor
Output Buffer
Bypath
+
Variable
Resistor
1
Fo
11
CMUTE
12
BYPATH
13
EMUTE
20
Vcc
Compressor
Mute
5.1K
3.3K
CPI-
7
Summing
Amp
CPI+
8
Limiter
+
Logic
CB
Bypath
EPI- 16
EPI+ 15
Variable
Resistor
Summing
Amp
Rectifier
Expandor
Mute
+
Bias Circuit
17
18
19
9
14
10
DO
ERC
EO
CB
EB
GND
PIN CONFIGURATION
FO
1
20
Vcc
FI
2
19
EO
CO
3
18
ERC
DI
4
17
DO
AGIC
5
16
EPI-
CRC
6
15
EPI+
CPI-
7
14
EB
CPI+
8
13
EMUTE
CB
9
12
BYPATH
10
11
CMUTE
GND
2
KA8507
S1T8507C
COMPANDER
S1T8507C
PIN DESCRIPTION
Pin No
Symbol
1
FO
2
FI
3
Description
Pin No
Symbol
Description
Filter Amp Output
11
CMUTE
Compressor Mute
Filter Amp Input
12
BYPATH
No companding
CO
Compressor Output
13
EMUTE
Expander Mute
4
DI
Data Input
14
EB
5
AGIC
AC Gain Infinity Capacitor
15
EPI +
Expander Non-Inverting Input
6
CRC
Compressor Rectifier Capacitor
16
EPI −
Expander Inverting Input
7
CPI −
Compressor Inverting Input
17
DO
8
CPI +
Compressor Non-Inverting Input
18
ERC
9
CB
Compressor Reference Bias
19
EO
Expander Output
10
GND
Ground
20
VCC
Supply Voltage
Expander Reference Bias
Data Output
Expander Rectifier Capacitor
ABSOLUTE MAXIMUM RATINGS
Characteristic
Supply Voltage
Power Dissipation
S1T8507C01-D0B0
S1T8507C01-S0B0
Symbol
Value
Unit
VCC
10
V
1000
mW
PD
410
Operating Temperature
TOPR
− 20 to + 70
°C
Storage Temperature
TSTG
− 55 to + 150
°C
3
S1T8507C
COMPANDER
ELECTRICAL CHARACTERISTICS
(VCC = 3V, f = 1kHz, Ta = 25°C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
−
−
2.4
7.0
V
−
4.0
6.5
mA
DC ELECTRICAL CHARACTERISTICS
Operating Voltage
VCC
Operating Current
ICC
No Signal
Standard Input Voltage (0dB)
VI (COMP)
VCC = 300mVrms = 0dB
8.0
12.5
17.0
mVrms
Gain Difference
∆GV1 (COMP)
Vin = −20dB
−0.5
0
+0.5
dB
∆GV2 (COMP)
Vin = −40dB
−1.0
0
+1.0
Bypath Gain Difference
∆GVB (COMP)
Vin = 0dB, BYPATH = GND
−1.5
0
+1.5
dB
Output Distortion
THD COMP
Vin = 0dB
−
0.5
1.0
%
Noise Output Voltage
VNO (COMP)
Rg = 620ohm
−
3.0
5.5
mVrms
Mute Attenuation Ratio
ATT MUTE
Vin = 0dB, CMUTE = GND
60
80
−
dB
Limiting Voltage
VLIM (COMP)
1.15
1.35
1.50
Vp-p
mVrms
COMPRESSOR PART
−
EXPANDER PART
Standard Output Level (0dB)
VO (EXP)
Vin = 30mVrms = 0dB
110
130
160
∆GV1 (EXP)
Vin = −10dB-0.5
−0.5
0
+0.5
∆GV2 (EXP)
Vin = −20dB
−1.0
0
+1.0
∆GV3 (EXP)
Vin = −30dB
−1.5
0
+2.0
Bypath Gain Difference
∆GVB (EXP)
Vin = 0dB, BYPATH = GND
−2.5
0
+0.5
dB
Output Distortion
THD EXP
Vin = 0dB
−
0.5
1.5
%
Noise Output Voltage
VNO (EXP)
Rg = 620ohm
−
10.0
30.0
µVrms
Mute Attenuation Ratio
ATT MUTE
Vin = 0dB, EMUTE = GND
60
80
−
dB
Max. Output Voltage
VOEXP (MAX)
THD = 10%
700
800
−
mVrms
Gain Difference
4
dB
COMPANDER
S1T8507C
TEST CIRCUIT
1µ F
1
+
FO
Vcc
20
+
COMP OUT
Vcc
10uF
10K
100K
2
FI
EO
19
EXP OUT
+
1.0uF
10K
1 µF
+
CO
ERC
18
+
3
2.2uF
DI
DO
KA8507
S1T8507C
22uF
+
5
AGIC
17
50pF
51K
EPI-
16
+
4
10K
+
1.0uF
474
2.2uF
6
CRC
EPI+
15
620
EXP IN
100K
7
CPI-
EB
14
+
+
9.1K
4.7uF
0.47uF
474
8
CPI+
9
CB
10
GND
EMUTE
13
BYPATH
12
CMUTE
11
620
+
COMP
IN
SW3
SW2
4.7uF
SW1
5
Vcc
+
47µF
Speaker
33K
TO TX
Modulation
104
20
1
+
101
Filter
Amp
5.6K 132
19
2
390K
473
Exp
120K
18
3
+
-
+
4
17
2.2µF
39K
Data output
473
10K
+
22µF
0.47µF
16
5
+
Comp
+
-
33K
33K
473
15
6
47K
7
+
+
8
13
10µF
1 µF
3.3K
REG
14
Expander
input
104
-
+
22
µF
2.2µF
51K
+
8.2K
9
2.2K
REG
LOGIC
12
Expander
Mute
223
103
11
10
MIC
Compressor
Mute
6
COMPANDER
S1T8507C
APPLICATION CIRCUIT
(HAND SET)