2SA1179N / 2SC2812N Ordering number : EN7198A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)55 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 Collector Current V IC (--)150 mA ICP IB (--)300 mA Base Current (--)30 mA Collector Dissipation PC 200 mW Collector Current (Pulse) Junction Temperature Tj Storage Temperature Tstg 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Gain-Bandwidth Product Output Capacitance fT Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Conditions VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA Ratings min 200 2SC2812N : VCE=6V, IC=1mA 2SA1179N : VCE=--6V, IC=--10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A typ max Unit (--)0.1 µA (--)0.1 µA 400 100 MHz (180) MHz (4.0)3.0 (--0.15)0.1 pF (--)0.5 V (--)1.0 V (--)55 V (--)50 V (--)5 V Marking : 2SA1179N : M / 2SC2812N : L * : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws: Rank 6 hFE 200 to 400 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637 No.7198-1/4 2SA1179N / 2SC2812N Package Dimensions 0.45 0.55 0.13 1.3 2.4 3 0 to 0.1 0.55 2 1 0.2 MIN unit : mm (typ) 7053-001 0.95 1.3 MAX 1.9 2.93 1.0 1 : Base 2 : Emitter 3 : Collector SANYO : CPA IC -- VCE IC -- VCE 20 2SA1179N µA --50 A --45µ A --40µ A --35µ 0 3 -- µA --25µA --12 --8 --20µA --15µA --10µA --4 2SC2812N 50µA 45µA Collector Current, IC -- mA Collector Current, IC -- mA --16 --5µA 16 40µA 35µA 30µA 12 25µA 20µA 8 15µA 4 10µA 5µA IB=0µA 0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 --50 10 20 30 40 IT04196 IC -- VBE 240 2SA1179N VCE= --6V 2SC2812N VCE=6V --200 --120 --80 --25°C --160 --40 160 120 Ta=75° C 25°C --25°C Collector Current, IC -- mA 200 Ta=75° C 25°C Collector Current, IC -- mA 50 Collector-to-Emitter Voltage, VCE -- V IT04195 IC -- VBE --240 IB=0µA 0 80 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT04197 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT04198 No.7198-2/4 2SA1179N / 2SC2812N hFE -- IC 1000 hFE -- IC 1000 2SA1179N VCE= --6V 7 2SC2812N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 5 Ta=75°C 25°C 3 --25°C 2 5 Ta=75°C 3 --25°C 25°C 2 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 2SA1179N VCE= --6V 3 2 100 7 5 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 IT04200 f T -- IC 2SC2812N VCE=6V 5 3 2 100 7 5 3 1.0 3 2 3 5 7 2 10 3 5 7 Cob -- VCB 2 2SC2812N f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 IT04202 2SA1179N f=1MHz 10 7 5 3 2 10 7 5 3 2 1.0 1.0 7 5 7 5 7 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 IT04203 2 --0.1 7 5 3 3 5 7 --10 2 3 5 2 1.0 3 7 --100 Collector Current, IC -- mA 2 3 5 IT04205 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 7 7 100 IT04204 VCE(sat) -- IC 5 2SA1179N IC / IB= --10 2 --1.0 5 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 Collector Current, IC -- mA IT04201 Cob -- VCB 2 3 7 5 3 --1.0 2 Collector Current, IC -- mA f T -- IC 7 Gain-Bandwidth Product, f T -- MHz 100 0.1 5 7--100 2 3 IT04199 2SC2812N IC / IB=10 3 2 0.1 7 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 IT04206 No.7198-3/4 2SA1179N / 2SC2812N ASO 10 s op 0m DC 7 5 s m 0.1 100µs s 1m IC=0.15A 2 10 Collector Current, IC -- A 10µs ICP=0.3A 3 er ati on 3 2 0.01 7 5 3 2 Ta=25°C Mounted on a glass epoxy board (20✕30✕1.6mm) For PNP, the minus sign is omitted. 0.001 0.1 2 3 PC -- Ta 250 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- mW 7 5 200 150 100 50 0 5 7 100 IT04207 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT04208 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No.7198-4/4