SANYO 2SA1416_10

2SA1416 / 2SC3646
Ordering number : EN2005B
SANYO Semiconductors
DATA SHEET
2SA1416 / 2SC3646
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Features
•
•
•
•
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)120
(--)100
V
(--)6
V
Collector Current
VEBO
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
500
mW
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Mounted on a ceramic board (250mm2✕0.8mm)
V
1.3
W
150
°C
--55 to +150
°C
Marking 2SA1416 : AB
2SC3646 : CB
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/5
2SA1416 / 2SC3646
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
fT
VCE=(--)5V, IC=(--)100mA
Gain-Bandwidth Product
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)400mA, IB=(--)40mA
(--0.2)0.1
(--0.6)0.4
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)400mA, IB=(--)40mA
(--)0.85
(--)1.2
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
Turn-ON Time
ton
See specified Test Circuit.
(80)80
Storage Time
tstg
See specified Test Circuit.
(700)850
ns
Fall Time
tf
See specified Test Circuit.
(40)50
ns
100*
400*
VCE=(--)10V, IC=(--)100mA
120
MHz
(13)8.5
pF
(--)6
V
V
V
ns
*: The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
Package Dimensions
unit : mm (typ)
7007B-004
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
RB
RL
VR
50Ω
+
100μF
+
470μF
--5V
50V
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
No.2005-2/5
2SA1416 / 2SC3646
IC -- VCE
--1.0
A
0m
--3
2SA1416
5m
A
0m
--2
--5mA
--0.6
--3mA
--0.4
--2mA
--1mA
--0.2
--1
--2
--3
--4
10mA
5mA
0.6
3mA
2mA
0.4
1mA
IB=0mA
0
mA
--300
--1.0mA
--200
--0.5mA
--100
IB=0mA
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V
1.0mA
200
0.5mA
100
IB=0mA
0
10
20
30
40
50
ITR03529
IC -- VBE
1.2
2SC3646
VCE=5V
--0.4
0.6
°C
25°C
--25°C
°C
25°C
--25°C
--0.6
0.8
0.4
Ta=7
5
Collector Current, IC -- A
1.0
Ta=7
5
Collector Current, IC -- A
300
Collector-to-Emitter Voltage, VCE -- V
--0.2
0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR03530
hFE -- IC
1000
5
DC Current Gain, hFE
25°C
--25°C
7
5
7
--1.0
2
3
ITR03532
1.2
ITR03531
Ta=75°C
25°C
--25°C
7
5
2
2
3
5
5 7 --0.1
Collector Current, IC -- A
1.0
2SC3646
VCE=5V
100
3
3
0.8
2
2
2
0.6
hFE -- IC
3
3
7 --0.01
0.4
Base-to-Emitter Voltage, VBE -- V
5
2
100
0.2
7
Ta=75°
C
3
0
1000
2SA1416
VCE=--5V
7
DC Current Gain, hFE
1.5mA
ITR03528
--0.8
10
2SC3646
2SA1416
VCE=--5V
--1.0
0
5
ITR03527
400
0
--50
IC -- VBE
--1.2
4
2.0mA
2.5
Collector Current, IC -- mA
Collector Current, IC -- mA
A
--1.5mA
3
IC -- VCE
500
--2.0m
0
0
2
Collector-to-Emitter Voltage, VCE -- V
2SA1416
mA
--2.5
--400
1
ITR03526
IC -- VCE
--500
20mA
15mA
0.8
0
--5
Collector-to-Emitter Voltage, VCE -- V
A
25m
A
30m
0.2
IB=0mA
0
0
2SC3646
A
Collector Current, IC -- A
Collector Current, IC -- A
A
--10m
--
--2
--0.8
IC -- VCE
1.0
A
15m
10
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR03533
No.2005-3/5
2SA1416 / 2SC3646
f T -- IC
2
2SA1416 / 2SC3646
f=1MHz
7
2SA1416
100
7
2SC3646
5
Cob -- VCB
100
2SA1416 / 2SC3646
VCE=10V
5
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
3
3
2
3
2
2SA
141
2SC
364
7
3
10
7 0.01
2
3
5
7
2
0.1
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
--100
5°C
7
Ta=
5
--25°C
25°C
3
7
3
2
3
--0.1
Collector Current, IC -- A
2
--0.01
5
7
5
7
--1.0
3
2
Ta=--25°C
7
25°C
5
3
7
2
--0.01
3
75°C
5 7 --0.1
2
3
Collector Current, IC -- A
5
7
--1.0
DC
op
tio
n
0.1
7
5
For PNP, minus sign is omitted
2SA1416 / 2SC3646
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2✕0.8mm)
7 1.0
Ta=75°C
5
3
--25°C
25°C
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
ITR03537
VBE(sat) -- IC
2SC3646
IC / IB=10
5
3
2
1.0
Ta=--25°C
7
5
25°C
7 0.01
2
3
75°C
5
7 0.1
2
3
5
7
2
1.0
ITR03535
Collector Current, IC -- A
PC -- Ta
1.4
0m
s
era
5
7
1.6
10 1ms
ms
10
3
2
0.01
7
5
100
3
2
Collector Dissipation, PC -- W
IC=1A
2
2
2SA1416 / 2SC3646
ICP=2A
3
7 100
2
ITR03539
3
ITR03534
ASO
1.0
7
5
5
Collector Current, IC -- A
5
3
2
3
7
5
--1.0
2
10
5
10
2SA1416
IC / IB=10
7
7
2SC3646
IC / IB=10
ITR03536
VBE(sat) -- IC
--10
5
VCE(sat) -- IC
2
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
3
7
5
7
2
1000
2SA1416
IC / IB=10
7
7 1.0
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
For PNP, minus sign is omitted
2
7
1.0
ITR03538
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
6
5
For PNP, minus sign is omitted
Collector Current, IC -- A
6
10
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE --
1.3
M
ou
1.2
nt
ed
1.0
on
ac
er
am
ic
0.8
bo
ar
No h
0.5
d(
25
0.6
0.4
0m
m2
✕
eat s
ink
0.8
m
2
7 100
V ITR03540
0
m
)
0.2
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR03541
No.2005-4/5
2SA1416 / 2SC3646
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2005-5/5