2SA1708 / 2SC4488 Ordering number : EN3094A SANYO Semiconductors DATA SHEET 2SA1708 / 2SC4488 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) : 2SA1708 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)120 (--)100 V VEBO IC (--)6 V (--)1 A (--)2 A Collector Dissipation ICP PC 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=(--)100V, IE=0A (--)100 nA Emitter Cutoff Current VEB=(--)4V, IC=0A (--)100 nA DC Current Gain hFE VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product fT Cob VCE=(--)10V, IC=(--)100mA Output Capacitance VCB=(--)10V, f=1MHz 100* 400* 120 (13)8.5 MHz pF Continued on next page. * : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS No.3094-1/5 2SA1708 / 2SC4488 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Strage Time Ratings Conditions min IC=(--)400mA, IB=(--)40mA IC=(--)400mA, IB=(--)40mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ Unit typ max (--0.2)0.1 (--0.6)0.4 V (--)0.85 (--)1.2 V (--)120 V (--)100 V IE=(--)10μA, IC=0A See specified Test Circuit. (--)6 V ton tstg See specified Test Circuit. (700)850 ns tf See specified Test Circuit. (40)50 ns Fall Time Package Dimensions (80)80 ns Switching Time Test Circuit unit : mm (typ) 7519-003 IB1 IB2 2.5 6.9 OUTPUT INPUT 1.45 1.0 PW=20μs D.C.≤1% RL + + 50Ω 1.0 4.5 RB VR 1.0 100μF VBE= --5V 1 2 4.0 1.0 0.6 0.5 0.9 3 VCC=50V 10IB1= --10IB2= IC=400mA (For PNP, the polarity is reversed.) 0.45 2.54 2.54 470μF 1 : Emitter 2 : Collector 3 : Base SANYO : NMP IC -- VCE 2SA1708 mA 5 --1 0 --2 A A --5mA -- --3mA --0.4 --2mA --1mA --0.2 0 0 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V A 25m 0.8 0.6 5mA 3mA 2mA 0.4 1mA IB=0mA 0 --5 ITR04322 20mA 15mA 10mA 0.2 IB=0mA --1 A 30m mA --10 --2 m 30 --0.6 2SC4488 5m --0.8 IC -- VCE 1.0 mA Collector Current, IC -- A Collector Current, IC -- A --1.0 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V ITR04323 No.3094-2/5 2SA1708 / 2SC4488 IC -- VCE 2.0mA -- --400 Collector Current, IC -- mA --1.5mA --300 --1.0mA --200 --0.5mA --100 IB=0mA 0 0 --10 --20 --30 0.5mA 100 IB=0mA 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR04325 IC -- VBE 1.2 2SA1708 VCE= --5V 2SC4488 VCE=5V Collector Current, IC -- A 1.0 --0.8 --0.6 Ta=75 °C 25°C --25°C Collector Current, IC -- A 1.0mA 200 ITR04324 --0.4 --0.2 0.8 0.6 0.4 0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 0 --1.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 2SC4488 VCE=5V 7 5 5 Ta=75°C 25°C DC Current Gain, hFE 3 2 --25°C 100 7 5 3 25°C Ta=75°C 2 --25°C 100 7 5 3 3 2 2 10 1.2 ITR04327 hFE -- IC 1000 2SA1708 VCE= --5V 7 0.2 ITR04326 hFE -- IC 1000 DC Current Gain, hFE 300 0 --1.0 10 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 7 0.01 3 3 5 7 0.1 2 100 7 5 3 2 3 5 7 1.0 2 3 ITR04329 f T -- IC 3 2SA1708 VCE= --10V 2 Collector Current, IC -- A f T -- IC 3 2 ITR04328 Gain-Bandwidth Product, f T -- MHz 7 --0.01 Gain-Bandwidth Product, f T -- MHz 1.5mA --50 IC -- VBE --1.2 400 0 --40 Collector-to-Emitter Voltage, VCE -- V 2SC4488 2.0mA Ta=75 °C 25°C --25°C Collector Current, IC -- mA --2 IC -- VCE 500 2SA1708 .5mA 2.5 mA --500 2SC4488 VCE=10V 2 100 7 5 3 2 10 10 7 --0.01 2 3 5 7 --0.1 2 Collector Current, IC -- A 3 5 7 --1.0 ITR04330 7 0.01 2 3 5 7 0.1 2 Collector Current, IC -- A 3 5 7 1.0 ITR04331 No.3094-3/5 2SA1708 / 2SC4488 Cob -- VCB 100 5 3 2 10 7 5 3 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- 2 10 7 5 7 7 --100 2 V ITR04332 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 5°C 7 2 5 5°C Ta=7 3 3 5 7 10 2 3 5 7 100 2 ITR04333 VCE(sat) -- IC 1000 2SA1708 IC / IB=10 7 2 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 7 --1.0 2SC4488 IC / IB=10 7 5 3 2 100 7 25°C Ta=75°C 5 3 C --25° --25°C 2 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 0.01 7 --1.0 2 ITR04334 Collector Current, IC -- A 5 3 2 Ta= --25°C 7 25°C 75°C 5 7 0.1 2 3 5 7 1.0 2 ITR04335 VBE(sat) -- IC 2SC4488 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 10 2SA1708 IC / IB=10 --1.0 2 Collector Current, IC -- A VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 3 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 1.0 2 7 0.01 IC=1.0A 0m s 5 DC 3 2 op era tio n 0.1 5 3 2 0.01 5 5 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 7 1.0 2 3 5 7 10 5 7 0.1 2 3 5 7 2 1.0 ITR04337 PC -- Ta 1.2 2SA1708 / 2SC4488 10 1m ms s 10 3 Collector Current, IC -- A ASO ICP=2.0A 2 ITR04336 2SA1708 / 2SC4488 Collector Dissipation, PC -- W 3 Collector Current, IC -- A 2SC4488 f=1MHz 7 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 Cob -- VCB 100 2SA1708 f=1MHz 1.0 0.8 0.6 0.4 0.2 0 2 3 5 Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR04338 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 ITR04339 No.3094-4/5 2SA1708 / 2SC4488 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No.3094-5/5