SANYO 2SA2210_12

2SA2210
Ordering number : ENA0667A
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
2SA2210
High-Current Switching Applications
Applications
•
Relay drivers, lamp drivers, motor drivers.
Features
•
•
Adoption of MBIT processes
Low collector-to-emitter saturation voltage
•
•
Large current capacitance
High-speed switching
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current (Pulse)
VEBO
IC
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector Current
Tc=25°C
Unit
--50
V
--50
V
--6
V
--20
A
--25
A
--3
A
2
W
30
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7529-002
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity
: 50 pcs./magazine
4.7
10.16
3.18
Electrical Connection
15.87
2
A
3.23
1
A2210
2.76
1.47 MAX
DETAIL-A
0.8
1
2
3
LOT No.
3
12.98
(0.84)
0.5
FRAME
EMC
2.54
2.54
( 1.0)
15.8
Marking
6.68
3.3
2.54
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220F-3SG
http://semicon.sanyo.com/en/network
21512 TKIM TC-00002708/30707FA TI IM TC-00000565 No. A0667-1/5
2SA2210
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
VCE= --2V, IC= --1A
VCE= --10V, IC= --1A
Storage Time
VCE(sat)
VBE(sat)
Unit
max
150
--10
μA
--10
μA
450
140
MHz
215
--200
IC= --7A, IB= --350mA
IC= --100μA, IE=0A
IC= --1mA, RBE=∞
V(BR)CBO
V(BR)CEO
pF
--500
mV
--1.2
IE= --100μA, IC=0A
tstg
tf
Fall Time
typ
VCB= --10V, f=1MHz
IC= --7A, IB= --350mA
V(BR)EBO
ton
Turn-On Time
min
VCB= --40V, IE=0A
VEB= --4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
V
--50
V
--50
V
--6
V
See specified Test Circuit
60
ns
See specified Test Circuit
270
ns
See specified Test Circuit
20
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
RB
RL
+
+
50Ω
100μF
470μF
VBE=5V
VCC= --20V
IC=20IB1= --20IB2= --7A
IC -- VCE
--12
--10
--8
--
-mA
600
0mA
--40
A
m
500
Collector Current, IC -- A
--14
--100mA
--6
--4
0mA
0mA
--10
A
--80m
A
--20
--9
A
--200m
mA
00m --9
A 00m
A --80
0
--16
mA
0mA --4
00m --30
0m
A
--70
0
--30
--10
Collector Current, IC -- A
--18
IC -- VCE
--10
--8
--7
--6
--5
--4
--50
0m
A
--20
--60mA
--40mA
--120mA
--160mA 40mA
--1
--20mA
--180mA
--3
--2
--2
--1
IB=0mA
0
0
--0.5
--1.0
--1.5
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
--2.0
IT12019
0
--0.2
--0.4
--0.6
--0.8
Collector-to-Emitter Voltage, VCE -- V
--1.0
IT12020
No. A0667-2/5
2SA2210
IC -- VBE
--30
5
DC Current Gain, hFE
--15
C
25°
--25
°C
2
Base-to-Emitter Voltage, VBE -- V
Gain-Bandwidth Product, fT -- MHz
--1.0V
--0.7V
3
2
10
--0.01 2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
Collector Current, IC -- A
3
2
100
7
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
100
7
3
5
7 --1.0
2
3
5
7 --10
2
Collector-to-Base Voltage, VCB -- V
3
5
5 7 --0.1
2
3
5 7 --1.0
2
3
2
--0.1
7
5
3
2
C
Ta= --25°
75°C
25°C
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
IC / IB=20
2
°C
75
=
Ta
--0.1
7
5
2
Ta= --25°C
75°C
2
25°C
--0.01
--0.01
2
C
5°
--2
C
5°
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10
2 3
IT12027
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
5 7 --10
2 3
IT12026
VBE(sat) -- IC
3
IC / IB=50
--1.0
7
5
5 7 --10
IT12024
VCE(sat) -- IC
IT12025
2
3
IC / IB=20
7
5
--0.01
7
VCE(sat) -- IC
5
3
3
5
--0.01
2
2
Collector Current, IC -- A
7
7
5
IT12022
5
--1.0
1000
2 3
VCE= --10V
IT12023
f=1MHz
5
--0.1
5 7 --10
fT -- IC
10
--0.01
5
Cob -- VCB
2
2 3
°C
2V
5V
--0.
0V
-2.
=E
VC
.
--0
DC Current Gain, hFE
2
5
5 7 --1.0
7
3
7
2 3
1000
5
100
5 7 --0.1
Collector Current, IC -- A
Ta=25°C
7
3
IT12021
hFE -- IC
1000
Output Capacitance, Cob -- pF
10
--0.01 2
--1.4
C
--1.2
5°
--1.0
°C
--0.8
5
75
--0.6
7
--2
--0.4
--25°C
100
25
--0.2
2
3
0
0
Ta=75°C
25°C
3
Ta
=
--10
Ta
=7
5 °C
Collector Current, IC -- A
--20
--5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
VCE= --2V
7
--25
3
hFE -- IC
1000
VCE= --2V
2
--1.0
Ta= --25°C
7
5
75°C
25°C
3
2
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Collector Current, IC -- A
2 3
5
IT12028
No. A0667-3/5
2SA2210
Forward Bias A S O
5
0m
s
10
m
s
S
--1.0
7
5
1m
s
on
ati
er
op
3
2
Collector Dissipation, PC -- W
10
μs
00
=5
PT
IC= --20A
--10
7
5
DC
/B
3
2
it
m
Li
Collector Current, IC -- A
3
2
--0.1
7
5
3
2
Tc=25°C
Single pulse
--0.01
--0.1
2
3
PC -- Ta
2.5
ICP= --25A
2.0
1.5
1.0
0.5
0
5
7 --1.0
2
3
5
7 --10
2
3
Collector-to-Emitter Voltage, VCE -- V
5
7
IT12029
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12030
PC -- Tc
35
Collector Dissipation, PC -- W
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12031
No. A0667-4/5
2SA2210
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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This catalog provides information as of February, 2012. Specifications and information herein are subject
to change without notice.
PS No. A0667-5/5