SANYO 2SB1121_11

2SB1121 / 2SD1621
Ordering number : EN1787B
SANYO Semiconductors
DATA SHEET
2SB1121 / 2SD1621
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Driver Applications
Applications
•
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1121
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)30
(--)25
V
(--)6
V
Collector Current
VEBO
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
500
mW
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Mounted on a ceramic board (250mm2✕0.8mm)
V
1.3
W
150
°C
--55 to +150
°C
Marking 2SB1121 : BD
2SD1621 : DD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
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31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/3045MW, TS No.1787-1/4
2SB1121 / 2SD1621
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)20V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
hFE1
VCE=(--)2V, IC=(--)100mA
hFE2
VCE=(--)2V, IC=(--)1.5A
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)1.5A, IB=(--)75mA
(--0.35)0.18
(--0.6)0.4
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)1.5A, IB=(--)75mA
(--)0.85
(--)1.2
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)25
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
Turn-ON Time
ton
See specified Test Circuit.
(60)60
Storage Time
tstg
See specified Test Circuit.
(350)550
ns
Fall Time
tf
See specified Test Circuit.
(25)25
ns
DC Current Gain
*: The 2SB1121 / 2SD1621 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
Package Dimensions
unit : mm (typ)
7007B-004
140 to 280
200 to 400
100*
560*
65
150
MHz
(32)19
pF
V
V
V
ns
U
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
VR
RB
OUTPUT
IB2
24Ω
50Ω
+
100μF
--5V
+
470μF
12V
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed)
No.1787-2/4
2SB1121 / 2SD1621
IC -- VCE
40m
A
--10mA
--8mA
--1.2
--6mA
--0.8
--4mA
--2mA
--0.4
0
--200
--400
--600
4mA
400
600
DC Current Gain, hFE
2SB1
121
5
3
10
0.6
0.8
1.0
21
7
0.4
0.4
2SB11
100
2
Base-to-Emitter Voltage, VBE -- V
2SD162
1
2
0.8
0.2
7
5
0.01
1.2
2
3
5 7 0.1
f T -- IC
Output Capacitance, Cob -- pF
2SD16
21
2
2SB
1121
100
7
5
3
3
5 7 1.0
2
3
5 7 10
ITR08871
Cob -- VCB
2
3
2
Collector Current, IC -- A
ITR08870
2SB1121 / 2SD1621
VCE=10V
For PNP, minus sign is omitted
1000
ITR08869
hFE -- IC
3
1.2
800
2SB1121 / 2SD1621
VCE=2V
For PNP, minus sign is omitted
5
1.6
5
IB=0mA
200
7
2.0
7
2mA
1000
2SD162
1
Collector Current, IC -- A
0.8
Collector-to-Emitter Voltage, VCE -- mV
IC -- VBE
0
Gain-Brandwidth Product, f T -- MHz
6mA
ITR08868
2.4
1000
10mA
8mA
0
0
2SB1121 / 2SD1621
f=1MHz
For PNP, minus sign is omitted
100
7
5
2SB
1121
3
2SD
162
2
1
2
10
1.0
10
10
2
3
5
7 100
2
3
5
7 1000
Collector Current, IC -- mA
3
VCE(sat) -- IC
21
6
D1
2S
2
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
ITR08874
10
m
0m s
s
10
IC=2A
DC
5
ITR08873
op
era
7
5
tio
n
3
2
3
0.01
3
2SB1121 / 2SD1621
ICP=5A
1.0
0.1
7
5
3
2
2
10
s
3
2S
7
ASO
7
5
1
12
B1
5 7 0.01
5
10
1.0
7
5
0.1
7
5
3
Collector-to-Base Voltage, VCB -- V
2SB1121 / 2SD1621
IC / IB=10
For PNP, minus sign is omitted
3
2
2
ITR08872
1m
3
2
2
Collector Current, IC -- A
10
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
1.2
--1000
2SB1121 / 2SD1621
VCE=2V
For PNP, minus sign is omitted
2.8
1.6
0
--800
Collector-to-Emitter Voltage, VCE -- mV
3.2
2SD1621
A
20m
30
0.4
IB=0mA
0
mA
50mA
mA
0
--3
0
--2
A
--1.6
0m
--4
IC -- VCE
2.0
mA
A
Collector Current, IC -- A
2SB1121
From top
--250mA
--200mA
--150mA
--100mA
--5
0m
Collector Current, IC -- A
--2.0
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
For PNP, minus sign is omitted
3
5
7
1.0
2
3
5
7
10
2
Collector-to-Emitter Voltage, VCE -- V
3
5
ITR08876
No.1787-3/4
2SB1121 / 2SD1621
PC -- Ta
1.8
2SB1121 / 2SD1621
Collector Dissipation, PC -- W
1.6
1.4
M
ou
1.2
nte
do
na
1.0
ce
ram
ic
0.8
bo
ard
0.6
No h
(2
50
mm
eat s
0.4
ink
2
✕0
.8m
m)
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08875
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1787-4/4