SANYO 2SB1122_11

2SB1122 / 2SD1622
Ordering number : EN2040B
SANYO Semiconductors
DATA SHEET
2SB1122 / 2SD1622
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amplifier Applications
Applications
•
Voltage regulators relay drivers, lamp drivers, electrical equipment.
Features
•
•
Adoption of FBET process.
Ultrasmall size making it easy to provide high-density hybrid IC’s.
Specifications ( ) : 2SB1122
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)60
(--)50
V
(--)5
V
Collector Current
VEBO
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
500
mW
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Mounted on a ceramic board (250mm2✕0.8mm)
V
1.3
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
max
Unit
VCB=(--)50V, IE=0A
(--)100
nA
VEB=(--)4V, IC=0A
(--)100
nA
Marking 2SB1122 : BE
2SD1622 : DE
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
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31710EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/5
2SB1122 / 2SD1622
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
hFE1
VCE=(--)2V, IC=(--)100mA
hFE2
VCE=(--)2V, IC=(--)1A
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)500mA, IB=(--)50mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)5
Turn-ON Time
ton
See specified Test Circuit.
(40)40
Storage Time
tstg
See specified Test Circuit.
(300)350
ns
Fall Time
tf
See specified Test Circuit.
(30)30
ns
DC Current Gain
*: The 2SB1122 / 2SD1622 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
Package Dimensions
unit : mm (typ)
7007B-004
140 to 280
200 to 400
100*
max
560*
30
150
MHz
(12)8.5
pF
(--180)120 (--500)300
(--)0.9
(--)1.2
mV
V
V
ns
U
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
VR
RB
OUTPUT
IB2
RL
50Ω
50Ω
+
100μF
+
470μF
--5V
25V
IC=10IB1= --10IB2=500mA
(For PNP, the polarity is reversed)
No.2040-2/5
2SB1122 / 2SD1622
IC -- VCE
--1.0
2SB1122
mA
--1
--0.8
--0.6
--4mA
--0.4
--2mA
--1mA
--0.2
--1
--2
--3
3mA
2mA
0.4
1mA
IB=0mA
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V
ITR08878
IC -- VBE
1200
2SD1622
VCE=2V
--800
--600
--400
800
600
400
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- mA
1000
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- mA
m
10
0.6
ITR08877
2SB1122
VCE= --2V
--200
200
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0
5
100
7
5
3
2
1.0
1.2
ITR08880
2SD1622
VCE=2V
25°C
Ta=75°C
3
--25°C
0.8
5
25°C
2
0.6
hFE -- IC
1000
7
DC Current Gain, hFE
Ta=75°C
3
0.4
Base-to-Emitter Voltage, VBE -- V
2SB1122
VCE= --2V
7
0.2
ITR08879
hFE -- IC
1000
DC Current Gain, hFE
9m
A
0
--1000
2
--25°C
100
7
5
3
2
10
7
10
5
7
5
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC -- mA
2
5
3
Output Capacitance, Cob -- pF
2SB1122
100
7
5
3
2
3
5
7 100
2
3
5
7 1000
2
3
ITR08882
Cob -- VCB
5
3
2SD1622
2
Collector Current, IC -- mA
VCE=10V
2
7 10
ITR08881
f T -- IC
5
Gain-Bandwidth Product, f T -- MHz
4mA
A
--5
IC -- VBE
--1200
8m
0.8
0
--4
Collector-to-Emitter Voltage, VCE -- V
7m
0.2
IB=0mA
0
6mA
5mA
A
A
--6mA
0
2SD1622
--8mA
Collector Current, IC -- A
Collector Current, IC -- A
2
--1
IC -- VCE
1.0
0mA
f=1MHz
3
2
2SB
11
2SD 22
162
2
10
7
5
3
For PNP, minus sign is omitted
10
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
2
3
For PNP, minus sign is omitted
2
5
ITR08883
5
7
1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
5
7 100
ITR08884
No.2040-3/5
2SB1122 / 2SD1622
VCE(sat) -- IC
2SB1122
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
°C
25
--100
7
C
75°
Ta=
°C
--25
5
3
2
7 --10
2
3
5
7 --100
2
3
Collector Current, IC -- mA
2
100
°C
25
7
5
5°C
7
Ta=
3
5
--2
°C
2
5
5
3
2
25°C
--1.0
Ta= --25°C
7
75°C
5
7
10
2
3
5
7 100
2
3
5 7 1000
2
ITR08886
Collector Current, IC -- mA
VBE(sat) -- IC
10
2SD1622
IC / IB=10
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1122
IC / IB=10
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
5 7 --1000
2
ITR08885
VBE(sat) -- IC
--10
3
5
3
2
25°C
1.0
Ta= --25°C
7
75°C
5
3
2
2
5
7 --10
2
3
5
7 --100
2
3
Collector Current, IC -- mA
5 7 --1000
2
ITR08887
5
7
5
DC
3
2
op
era
tio
n
0.1
7
5
3
For PNP, minus sign is omitted
Ta=25°C Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
2
0.01
5
7
1.0
2
3
5
7
10
2
3
3
Collector-to-Emitter Voltage, VCE -- V
5
7 100
2
3
5 7 1000
2
ITR08888
PC -- Ta
2SB1122 / 2SD1622
1.2
Collector Dissipation, PC -- W
s
s
0m
2
1.3
10
10
IC=1A
1.0
10
1.4
2SB1122 / 2SD1622
ms
7
Collector Current, IC -- mA
ASO
ICP=2A
1m
Collector Current, IC -- A
5
10
5
2
2SD1622
IC / IB=10
7
--10
3
VCE(sat) -- IC
1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1000
M
ou
nt
1.0
ed
on
ac
er
0.8
am
ic
bo
ar
0.6
d(
25
0.5
No
0.4
heat
0m
m2
✕
0.8
sink
m
m
)
0.2
0
5
7
100
ITR08889
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08890
No.2040-4/5
2SB1122 / 2SD1622
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2040-5/5