Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. unit:mm 2003B [2SA1319/2SC3332] 5.0 4.0 4.0 5.0 Switching Test Circuit IB1 OUTPUT RB RL 333Ω IB2 VR 0.45 0.44 14.0 INPUT 0.45 0.5 0.6 2.0 PW=20μs D.C.≤1% 50Ω + 100μF + 470μF 1 2 1 : Emitter 2 : Collector 3 : Base SANYO : NP 3 100V --5V 20IB1=--20IB2=IC=300mA (For PNP, the polarity is reversed.) ( ) : 2SA1319 1.3 1.3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO IC (–)6 V Collector Current Collector Current (Pulse) ICP PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg V (–)0.7 A (–)1.5 A 700 mW 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Conditions ICBO IEBO VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 hFE1 hFE2 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA Ratings min 100* R S T hFE 100 to 200 140 to 280 200 to 400 max Unit (–)0.1 μA (–)0.1 μA 400* 80 * : The 2SA1319/2SC3332 are classified by 100mA hFE as follows : Rank typ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4 2SA1319/2SC3332 Continued from preceding page. Parameter Symbol Gain Bandwidth Product Base-to-Emitter Saturation Voltage 120 IC=(–)250mA, IB=(–)25mA (0.20) 0.12 (0.5) 0.4 V (–)0.85 (–)1.2 V V(BR)EBO Turn-ON Time ton Storage Time Fall Time ns ns IC -- VCE From top 100mA 90mA 80mA 70mA 60mA 700 --60mA --20mA --300 --200 --100 600 500 2SC3332 Pulse 50m A 40mA 30mA 20mA 400 10mA 300 200 100 --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE – V 0 IB=0 --1.0 Collector Current, IC – mA --700 --600 --400 2SA1319 Pulse --1.5mA --300 --1.0mA --200 0.2 0.4 0.6 0.8 1.0 2SC3332 Pulse 4.0mA 3.5mA 3.0mA 800 2.5mA 600 2.0mA 1.5mA 400 1.0mA 200 --0.5mA --100 0.5mA IB=0 --10 --20 --30 --40 --50 --60 --70 --80 Collector-to-Emitter Voltage, VCE – V ITR03220 0 2SA 1319 332 2SC3 600 400 200 For PNP, minus sign is omitted. 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 1.2 ITR03222 IB=0 0 10 20 30 40 50 60 70 Collector-to-Emitter Voltage, VCE – V Common Base Output Capacitance, Cob – pF VCE=5V 800 0 0 IC -- VBE 1000 ITR03219 IC -- VCE 1000 --3.0mA --2.5mA --2.0mA --500 IB=0 0 Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA --5.0mA --4.5mA --4.0mA --3.5mA 0 ITR03218 IC -- VCE --800 Collector Current, IC – mA ns (60)60 --40mA 0 (60)50 See specified Test Circuit --400 0 V tf 800 --500 V (–)6 See specified Test Circuit Collector Current, IC – mA Collector Current, IC – mA --600 V tstg --120mA --80mA pF (–)160 (900) 1000 2SA1319 Pulse MHz (–)180 IE=(–)10μA, IC=0 See specified Test Circuit IC -- VCE --700 Unit VCE(sat) Emitter-to-Base Breakdown Voltage From top --200mA --180mA --160mA --140mA max (11)8 Collector-to-Emitter Breakdown Voltage --800 typ VCE=(–)10V, IC=(–)50mA VCB=(–)10V VBE(sat) IC=(–)250mA, IB=(–)25mA V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Base Breakdown Voltage min fT C ob Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Ratings Conditions 80 ITR03221 Cob -- VCB 100 7 5 3 2 2SA 131 9 2SC 333 2 10 7 5 3 2 1.0 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 2 100 ITR03223 No.1334-2/4 2SA1319/2SC3332 BE hFE -- IC 1000 5 2 5 3 5 7 --10 2 3 3 5 7 --100 2 Collector Current, IC – mA 3 2 VC E =10 V 5V 100 7 5 3 2 5 7 2 3 5 7 --100 2 Collector Current, IC – mA --10 3 5 7 2S For PNP, minus sign is omitted. 7 10 2 3 5 7 100 2 5V 5 3 2 5 7 2 10 3 5 7 2 100 5 7 1000 ITR03227 3 ASO Ta=25°C Single pulse ICP 10 5 1m 10 s ms 0m 3 2 DC 100 op era 5 s tio 3 2 n 10 5 5 7 1000 2 ITR03225 Collector Current, IC – mA Collector Current, IC – mA 2S A1 31 9 32 5 7 1000 3 C3 3 V V CE=10 5 5 2 fT -- IC ITR03226 1.0 7 100 100 10 --1000 2 5 2 3 3 3 3 3 2 3 2 2SC3332 IC / IB=10 0.1 7 10 5 5 2 5 Collector Current, IC – mA VCE(sat) -- IC 3 3 ITR03224 2SA1319 10 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 2 3 2 fT -- IC 5 Gain-Bandwidth Product, fT – MHz 7 --1000 5 Gain-Bandwidth Product, fT – MHz 3 3 Collector Current, IC – mA 5 7 1000 2 ITR03228 5 3 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE – V 2 3 ITR03229 PC -- Ta 800 Collector Dissipation, PC – mW 10V V 3 7 5 7 2 5V 5 10 10 10 7 =2 E 2V 2 100 VC =-E 3 --10V VC 5 DC Current Gain, hFE 3 7 2SC3332 Pulse 5 2 100 CB 7 3 --5V DC Current Gain, hFE 1000 2SA1319 Pulse 7 g hFE -- IC 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR03230 No.1334-3/4 2SA1319/2SC3332 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.1334-4/4