FAIRCHILD MBR20200CT_10

MBR20200CT
Dual High Voltage Schottky Rectifier
Features
•
•
•
•
•
•
Low Forward Voltage Drop
Low Power Loss and High Efficiency
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
Absolute Maximum Ratings*
Symbol
VRRM
VR
1 2 3
Mark : MBR20200CT
1. Anode
3. Anode
2. and Tab Cathode
Ta = 25°C unless otherwise noted
Parameter
Value
Unit
200
V
200
V
10 (Per Leg)
20 (Per Device)
A
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
IF(AV)
Average Rectified Forward Current, TC=115°C
IFSM
Peak Forward Surge Current, 8.3mS Half Sine wave
TSTG
Storage Temperature Range
150
A
-55 to +150
°C
Operating Junction Temperature
150
°C
TJ
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Ta = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
RθJA
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics*
Symbol
IR
Parameter
Reverse Current
Unit
1.5
°C/W
62.5
°C/W
Ta = 25°C unless otherwise noted
Test Condition
TC = 25 °C
TC = 125 °C
VR= 200V
VR= 200V
TC = 25 °C
IF= 10A
IF= 10A
TC = 125 °C
Forward Voltage
VF
IF= 20A
TC = 25 °C
IF= 20A
TC = 125 °C
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
© 2010 Fairchild Semiconductor Corporation
MBR20200CT Rev. A2
Max.
Min.
Max.
Unit
0.2
5
mA
0.9
0.8
1.0
0.9
V
www.fairchildsemi.com
1
MBR20200CT — Dual High Voltage Schottky Rectifier
November 2010
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
1000
100
1
Reverse Current, IR[uA]
Forward Current, IF[A]
10
o
T J=125 C
o
T J=75 C
0.1
o
T J=25 C
o
TJ=125 C
10
1
o
TJ=75 C
0.1
0.01
o
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TJ=25 C
1E-3
1.0
50
Forward Voltage Drop, V F[V]
Figure 3.Junction Capacitance
150
200
Figure 4. Power Derating
[A]
30
1
0.9
0.8
0.7
F(AV)
f=1mhz
0.6
Average Forward Current, I
Juntion Capacitance, CJ[nF]
100
Reverse Voltage, VR[V]
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
DC
20
15
10
5
0
0
10
25
50
75
100
125
150
o
Case Temperature, T C[ C]
Reverse Voltage, V R[V]
© 2010 Fairchild Semiconductor Corporation
MBR20200CT Rev. A2
25
www.fairchildsemi.com
2
MBR20200CT — Dual High Voltage Schottky Rectifier
Typical Performance Characteristics
MBR20200CT — Dual High Voltage Schottky Rectifier
Phisical Dimensions
TO-220 [ DUAL GAUGE ]
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
MBR20200CT Rev. A2
www.fairchildsemi.com
3
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The datasheet is for reference information only.
Rev. I50
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