SANYO 2SC6146

2SC6146
Ordering number : ENA1160
SANYO Semiconductors
DATA SHEET
2SC6146
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
•
•
•
•
High breakdown voltage.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
Conditions
Ratings
Unit
VCBO
VCES
800
V
800
V
VCEO
VEBO
350
V
8
V
1
A
IC
ICP
2
A
0.5
A
Collector Dissipation
IB
PC
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Base Current
PW≤300μs, duty cycle≤10%
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Ratings
min
typ
Unit
max
ICBO
IEBO
VCB=400V, IE=0A
10
μA
VEB=5V, IC=0A
10
μA
hFE1
VCE=5V, IC=0.1A
100
hFE2
VCE=5V, IC=0.5A
VCE=5V, IC=1mA
20
hFE3
200
10
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2208CB MS IM TC-00001663 No. A1160-1/4
2SC6146
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
Unit
max
Gain-Bandwidth Product
fT
Output Capacitance
Cob
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
tstg
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
1.0
μs
Storage Time
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
1.0
μs
Fall Time
tf
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
0.3
μs
10
pF
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
IC=1mA, IE=0A
IC=100μA, RBE=0Ω
IC=5mA, RBE=∞
IE=1mA, IC=0A
Package Dimensions
0.8
V
1.5
V
800
V
800
V
350
V
8
V
Switching Time Test Circuit
unit : mm (typ)
7519-003
IB1
PW=20μs
D.C.≤1%
2.5
6.9
1.45
OUTPUT
IB2
1.0
VR
RB
RL
4.5
1.0
INPUT
1.0
50Ω
+
470μF
+
100μF
1.0
0.9
1
2
4.0
0.6
0.5
3
VCC=200V
0.45
2.54
2.54
VBE= --5V
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
0.6
40mA
30mA
20mA
0.4
10mA
0.2
0.7
0.6
0.5
0.4
0.3
0.2
--40°
C
50mA
0.8
20°
C
0.8
VCE=5V
0.9
00mA
A 90mA 1
A 80m
m
0
7
60mA
Collector Current, IC -- A
Collector Current, IC -- A
200
IC -- VBE
1.0
150mA
Ta=
1
mA
25°C
IC -- VCE
1.0
0.1
IB=0mA
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-to-Emitter Voltage, VCE -- V
4.5
5.0
IT13485
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT13486
No. A1160-2/4
2SC6146
hFE -- IC
5
3
DC Current Gain, hFE
DC Current Gain, hFE
Ta=120°C
2
25°C
100
7
5
VCE=5V
3
Ta=120°C
2
--40°C
3
2
10
7
5
25°C
100
7
--40°C
5
3
2
10
3
7
2
5
1.0
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
3
0.001
5 7 1.0
IT13487
Collector Current, IC -- A
7
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
2
10
7
5
3
2
3
5 7 0.01
2
2
3
5
7
2
10
3
5
Collector-to-Base Voltage, VCB -- V
10
VCE(sat) -- IC
2
1.0
7
5
3
C
20°
2
1
Ta=
0.1
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0
7
5
3
C
20°
2
1
Ta=
0.1
7
5
0.01
C
25°
--40°C
2
3
5
7
2
0.1
3
Collector Current, IC -- A
2
3
5
Ta= --40°C
25°C
120°C
3
2
0.01
2
3
5
7
2
0.1
3
5
Collector Current, IC -- A
3
2
ICP=2A
IC=1A
s
0μ
s
0μ
30
1.0
7
5
7 1.0
IT13492
Forward Bias A S O
5
3
2
DC
0.1
7
5
10
op
1m
s
m
s
era
tio
n
3
2
0.01
7
5
3
2
1.0
IT13493
7 1.0
IT13490
5
IC/IB1= 10
IB2/IB1= 10
R Load
Collector Current, IC -- A
5
IC / IB=5
7
SW Time -- IC
0.1
0.1
3
VBE(sat) -- IC
1.0
1.0
IT13491
tf
2
0.1
2
7
tstg
7
10
Switching Time, SW Time -- μs
1.0
5
C
25°
--40°C
3
2
5 7 1.0
IT13488
Collector Current, IC -- A
IC / IB=10
3
3
3
IT13489
5
2
VCE(sat) -- IC
3
0.01
7
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5 7 0.1
IC / IB=5
5
2
1.0
3
Collector Current, IC -- A
Cob -- VCB
3
Output Capacitance, Cob -- pF
hFE -- IC
5
VCE=0.7V
Tc=25°C
Single pulse
0.001
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Collector-to-Emitter Voltage, VCE -- V
5 7
IT13699
No. A1160-3/4
2SC6146
Reverse Bias A S O
Ta=25°C
L=500μH
IB2= --0.2A
Single pulse
3
Collector Current, IC -- A
2
1.0
7
5
3
2
0.1
7
5
3
PC -- Ta
1.2
1.0
Collector Current, IC -- A
5
0.8
0.6
0.4
0.2
2
0.01
100
0
2
3
5
7
Collector-to-Emitter Voltage, VCE -- V
1000
IT13495
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT13496
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1160-4/4