SANYO 2SK4085LS_12

2SK4085LS
Ordering number : ENA0553D
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4085LS
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance RDS(on)=0.33Ω (typ.)
Input capacitance Ciss=1200pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (Pulse)
V
±30
V
Limited only by maximum temperature Tch=150°C
16
A
IDpack *2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
11
A
IDP
PW≤10μs, duty cycle≤1%
60
A
2.0
W
IDc *1
Drain Current (DC)
Unit
500
Allowable Power Dissipation
PD
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
141
mJ
16
A
Avalanche Current *5
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=16A (Fig.1)
*5 L≤1mH, Single pulse
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
Marking
Electrical Connection
6.68
3.3
2.54
3.23
K4085
LOT No.
2.76
1
12.98
15.8
15.87
2
1.47 MAX
0.8
3
1
2.54
2
3
0.5
2.54
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
http://semicon.sanyo.com/en/network
40412 TKIM TC-00002743/O1007 TIIM TC-00000927/40407QB TIIM TC-00000628/22107QB TIIM TC-00000556 No. A0553-1/5
2SK4085LS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
Input Capacitance
Ciss
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Ratings
Conditions
min
Unit
max
500
VDS=10V, ID=1mA
V
100
μA
±100
nA
3
VDS=10V, ID=8A
ID=8A, VGS=10V
5
4.5
V
9
S
0.33
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=16A
0.43
Ω
1200
pF
250
pF
55
pF
26.5
ns
78
ns
146
ns
57
ns
46.6
nC
8.2
nC
27.4
IS=16A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
nC
0.95
1.3
V
Fig.2 Switching Time Test Circuit
VIN
L
VDD=200V
10V
0V
≥50Ω
RG
ID=8A
RL=25Ω
VIN
D
2SK4085LS
10V
0V
typ
VDD
50Ω
VOUT
PW=10μs
D.C.≤0.5%
G
2SK4085LS
P.G
ID -- VDS
45
Tc=25°C
15V
35
8V
30
25
20
15
10
10
15
20
25
Drain-to-Source Voltage, VDS -- V
75°C
25
20
15
5
VGS=5V
5
30
10
6V
5
Tc= --25°C
25°C
40
Drain Current, ID -- A
35
Drain Current, ID -- A
VDS=20V
10V
0
ID -- VGS
45
40
0
RGS=50Ω
S
30
IT11732
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
18
20
IT11733
No. A0553-2/5
2SK4085LS
RDS(on) -- VGS
Tc=75°C
25°C
--25°C
0.2
3
5
7
9
11
13
10
=
Tc
--2
°C
75
2
A
=8
ID
0.4
0.3
0.2
0.1
--25
1.0
7
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
5
75
100
125
150
IT11735
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V
IT11737
Ciss, Coss, Crss -- VDS
10000
7
5
VDD=200V
VGS=10V
7
50
VGS=0V
IT11736
SW Time -- ID
1000
3
25
IS -- VSD
3
2
5
3
0.1
0
3
2
5°C
3
0.5
=1
S
, VG
Case Temperature, Tc -- °C
Source Current, IS -- A
5
0V
5
°C
25
7
0.6
IT11734
VDS=10V
2
0.7
0
--50
15
| yfs | -- ID
3
0.8
--25°C
0.4
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.8
0
f=1MHz
3
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
0.9
1.0
0.6
RDS(on) -- Tc
1.0
ID=8A
Tc=7
5°C
25°C
1.2
td (off)
2
100
7
tf
tr
5
Ô
td(on)
3
2
Ô
Ciss
1000
7
5
CossÔ
3
2
100
7
5
CrsÔ
s
3
2
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
10
7
100
7
5
3
2
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
0
10
20
30
Total Gate Charge, Qg -- nC
0
5
10
40
50
IT11740
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
VDS=200V
ID=16A
9
Gate-to-Source Voltage, VGS -- V
5
IT11738
VGS -- Qg
10
3
10
7
5
3
2
1
10 0ms
DC
0m
IDpack(*2)=11A
s
op
era
tio
n
Operation in this area
is limited by RDS(on).
1.0
7
5
3
2
0.1
7
5
3
2
10
10
Tc=25°C
Single pulse
0.01
1.0
2
3
50
IT11739
ASO
IDP=60A(PW≤10μs)
IDc(*1)=16A
45
μs
0μ
s
1m
s
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
5 7 10
2
3
5 7 100
2
Drain-to-Source Voltage, VDS -- V
3
5 71000
IT16814
No. A0553-3/5
2SK4085LS
PD -- Ta
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
160
IT11730
EAS -- Ta
120
PD -- Tc
45
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
2.5
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11742
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0553-4/5
2SK4085LS
Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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mentioned above.
This catalog provides information as of April, 2012. Specifications and information herein are subject
to change without notice.
PS No. A0553-5/5