3LP01C Ordering number : EN6645B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP01C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% Unit --30 V ±10 V --0.1 A --0.4 A PD Tch 0.25 W Channel Temperature 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=--1mA, VGS=0V IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--100μA --0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--50mA 80 8 10.4 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--30mA, VGS=--2.5V 11 15.4 Ω ID=--1mA, VGS=--1.5V 27 54 Ω Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage --30 V VDS=--30V, VGS=0V ID=--50mA, VGS=--4V Marking : XA --1 μA ±10 μA --1.4 110 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982 No.6645-1/4 3LP01C Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ratings Conditions min typ Unit max VDS=--10V, f=1MHz VDS=--10V, f=1MHz 7.5 pF 5.7 pF 1.8 pF td(on) VDS=--10V, f=1MHz See specified Test Circuit. 24 ns Rise Time tr See specified Test Circuit. 55 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 120 ns Fall Time tf See specified Test Circuit. 130 ns Total Gate Charge Qg nC Qgs 0.18 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA VDS=--10V, VGS=--10V, ID=--100mA VDS=--10V, VGS=--10V, ID=--100mA 1.43 Gate-to-Source Charge Diode Forward Voltage VSD IS=--100mA, VGS=0V Package Dimensions 0.25 --0.83 nC --1.2 V Switching Time Test Circuit unit : mm (typ) 7013A-013 0.1 3 VDD= --15V VIN ID= --50mA RL=300Ω VIN PW=10μs D.C.≤1% 1.5 2.5 0.5 2.9 0V --4V D VOUT G 2 1 : Gate 2 : Source 3 : Drain SANYO : CP --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --25 °C --3 . --0.16 --2.0V Drain Current, ID -- A --0.06 VDS= --10V --0.18 5V . --2 V --0.07 ID -- VGS --0.20 --6.0 Drain Current, ID -- A --0.08 --4 .0V --3.5V --0.09 0V ID -- VDS --0.10 S --0.14 25°C Ta= 0.3 1.1 0.4 50Ω --0.12 75° C 0.95 P.G 0.05 0.5 3LP01C 1 --0.10 --0.08 --0.06 --0.04 --0.02 --0.01 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 IT00077 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT00078 No.6645-2/4 3LP01C RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 10 --25°C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 8 6 4 2 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 --0.7 --25°C 25°C 3 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT00085 3 IT00080 VGS= --1.5V 2 100 7 5 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --1.0 3 IT00082 ⏐yfs⏐ -- ID VDS= --10V 7 5 3 25°C 2 0.1 5°C 2 Ta= -- 75°C 7 5 3 2 2 3 5 7 2 --0.1 3 IT00084 SW Time -- ID VDD= --15V VGS= --4V 7 Switching Time, SW Time -- ns 5 Ta=7 5°C Source Current, IS -- A 7 2 --0.1 RDS(on) -- ID 1000 --0.1 --0.6 7 Drain Current, ID -- A 2 --0.01 --0.5 5 3 IT00083 VGS=0V 2 3 5 0.01 --0.01 160 IS -- VSD 3 2 Drain Current, ID -- mA Forward Transfer Admittance, ⏐yfs⏐ -- S 10 2 1.0 mA --30 = ID 5V, --2. A = 50m V GS = -I V, D 4.0 = -S VG 12 3 IT00081 16 14 --25°C 5 10 --0.1 3 RDS(on) -- Ta 18 7 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C Ta=75°C 25°C Ta=75°C 10 7 3 7 2 1000 5 2 3 IT00079 VGS= --2.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --10 RDS(on) -- ID 100 5 1.0 --0.01 0 0 VGS= --4V 7 25 10 RDS(on) -- ID 100 Ta=25°C 5 3 tf 2 100 td(off) 7 5 tr 3 td(on) 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00086 No.6645-3/4 3LP01C Ciss, Coss, Crss -- VDS 100 7 Gate-to-Sourse Voltage, VGS -- V Ciss, Coss, Crss -- pF VDS= --10V ID= --0.1A --9 5 3 2 10 Ciss 7 Coss 5 3 2 Crss --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --10 --5 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 IT00088 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W VGS -- Qg --10 f=1MHz 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice. PS No.6645-4/4