SANYO AML2002

AML2002
Ordering number : ENA1837
SANYO Semiconductors
DATA SHEET
AML2002
NPN Epitaxial Planar Silicon Transistor
LED Back Light
Features
•
•
•
•
VCEO=200V, IC=0.7A
Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A
High-speed switching tf=70ns(typ.)@IC=0.3A
The plastic-covered heat sink eliminates the need for an insulator when mounting the AML2002
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Unit
220
V
200
V
8
V
0.7
A
2
A
1.5
W
10
W
150
°C
-55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7516A-002
• Package
: TO-126ML
• JEITA, JEDEC
: TO-126
• Minimum Packing Quantity : 200 pcs./bag
8.0
Marking
4.0
3.6
2
3.0
11.0
3
LOT No.
1.5
7.5
L2002
1
3.0
1.6
0.8
0.8
0.75
Electrical Connection
3.3
1.0
1.4
1.0
15.5
0.7
2
3
1.7
1
1 : Emitter
2 : Collector
3 : Base
2.4
4.8
SANYO : TO-126ML
http://semicon.sanyo.com/en/network
12611CB TKIM TC-00002562 No. A1837-1/4
AML2002
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
VCB=100V, IE=0A
VEB=4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=5V, IC=100mA
VCE=10V, IC=100mA
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=0.35A, IB=35mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
Conditions
min
typ
Unit
max
200
1
μA
1
μA
560
120
MHz
9
IC=0.35A, IB=35mA
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
IC=1mA, RBE=∞
V(BR)EBO
ton
IE=10μA, IC=0A
See specified Test Circuit.
tstg
tf
pF
125
220
0.82
1.2
mV
V
220
V
200
V
8
V
50
ns
See specified Test Circuit.
2
μs
See specified Test Circuit.
70
ns
Switching Time Test Circuit
IB1
PW=50μs
D.C.≤1%
OUTPUT
IB2
INPUT
RB
RL
50Ω
+
820μF
VCC=100V
IC=10IB1= --10IB2=0.3A
IC -- VCE
0.5
20mA
4mA
0.3
6mA
8mA
10mA
0.2
2mA
IB=0mA
0.1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
0.8
0.08
200μA
0.06
0.04
100μA
IB=0μA
0
1
2
3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
--25°C
0.3
0.8
Base-to-Emitter Voltage, VBE -- V
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
1000
7
5
DC Current Gain, hFE
0.4
400μA
300μA
10
IT15965
VCE=5V
Ta=75°C
3
2
0.5
μA
0.10
IT15964
VCE=5V
Ta=
75°
C
25°C
Collector Current, IC -- A
0.12
0
0.7
0
700
0.14
0.02
1.0
0.6
500μA
A
Collector Current, IC -- A
0.4
0μ
A
0.6
0.7
600μA
80
0.16
90
0.18
60mA
50mA
40mA
30mA
0.8
Collector Current, IC -- A
80mA
0μ
A
100mA
0.9
IC -- VCE
0.20
1m
1.0
25°C
--25°C
100
7
5
3
2
10
7
5
3
2
0.9
1.0
IT15966
1.0
0.01
2
3
5
7
0.1
2
3
Collector Current, IC -- A
5
7 1.0
IT15967
No. A1837-2/4
AML2002
hFE -- IC
100
7
5
0.5
V
2.0
V
V
3
2
10
7
5
3
2
1.0
0.01
2
3
5
7
2
0.1
3
5
Collector Current, IC -- A
Cob -- VCB
100
1.0
IT15956
2
10
7
5
3
2
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
VCE(sat) -- IC
1.0
7
5
3
2
°C
Ta=75
0.1
7
5
--25°C
3
2
0.01
0.01
2
3
5
7
25°C
2
0.1
3
5
Collector Current, IC -- A
1.0
IT15971
7 1.0
IT15968
IC / IB=10
5
3
2
0.1
5°C
7
7
Ta=
5
°
--25
3
C
C
25°
2
2
3
5
7
2
0.1
3
5
7 1.0
IT15970
5
7 1.0
IT15972
VBE(sat) -- IC
Ta= --25°C
7
75°C
25°C
5
3
2
2
3
5
7
2
0.1
3
Collector Current, IC -- A
ICP=2A
10ms
100ms
IC=0.7A
n
0.1
7
5
3
2
0.01
7
5
3
2
<10μs
μs
100
1.0
7
5
3
2
ASO
io
at
Collector-to-Emitter
2 3 5 7100 2 3 5 71000
Voltage, VCE -- V IT16012
5
er
0.001
0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10
3
op
s
0μ
n
io
50
at
er
op
Ta=25°C
Single pulse
2
0.1
s
0μ
50
C
s
7
C
s
1m
5
VCE(sat) -- IC
0.1
0.01
7
<10μs
3
D
μs
100
0m
s
0.1
7
5
3
2
0.01
7
5
3
2
10
2
IC / IB=10
ICP=2A
IC=0.7A
2
10
7
5
3
2
m
10
1.0
7
5
3
2
3
1.0
ASO
D
Collector Current, IC -- A
10
7
5
3
2
5
Collector Current, IC -- A
IC / IB=20
3
2
7
0.01
0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
7
5
100
7
5 7 100
IT15969
Collector-to-Base Voltage, VCB -- V
2
1.0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
3
Collector Current, IC -- A
Collector Current, IC -- A
Output Capacitance, Cob -- pF
5
5
10
0.01
7
f=1MHz
7
VCE=10V
7
Gain-Bandwidth Product, fT -- MHz
1.0
100
7
5
.0V
=5
E
VC
DC Current Gain, hFE
3
2
fT -- IC
1000
Ta=25°C
1m
s
Tc=25°C
Single pulse
0.001
0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10
2 3 5 7100 2 3 5 71000
IT16013
Collector-to-Emitter Voltage, VCE -- V
No. A1837-3/4
AML2002
PC -- Ta
1.6
PC -- Tc
12
1.5
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15974
10
8
6
4
2
0
0
25
50
75
100
125
150
Case Temperature, Tc -- °C
175
IT15975
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PS No. A1837-4/4