SANYO ATP103

ATP103
Ordering number : ENA1623
SANYO Semiconductors
DATA SHEET
ATP103
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--55
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
PD
Tc=25°C
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
V
--165
A
50
W
Tch
150
°C
Tstg
--55 to +150
°C
EAS
IAV
57
mJ
--28
A
Note : *1 VDD=--10V, L=100μH, IAV=--28A
*2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
Marking : ATP103
Ratings
min
typ
max
--30
Unit
V
--1
μA
±10
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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D0209PA TK IM TC-00002144 No. A1623-1/4
ATP103
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
RDS(on)1
VDS=--10V, ID=--1mA
VDS=--10V, ID=--28A
ID=--28A, VGS=--10V
RDS(on)2
ID=--14A, VGS=--4.5V
Input Capacitance
Ciss
VDS=--10V, f=1MHz
2430
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
555
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
395
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
19
ns
See specified Test Circuit.
400
ns
td(off)
tf
See specified Test Circuit.
150
ns
See specified Test Circuit.
145
ns
VDS=--15V, VGS=--10V, ID=--55A
VDS=--15V, VGS=--10V, ID=--55A
47
nC
10
nC
VDS=--15V, VGS=--10V, ID=--55A
IS=--55A, VGS=0V
--1.03
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
--1.2
--2.6
45
V
S
10
13
mΩ
14.5
20.5
mΩ
8.7
nC
--1.5
V
Package Dimensions
unit : mm (typ)
7057-001
1.5
4.6
0.5
7.3
0.55
0.7
0.5
3
0.8
0.6
1 : Gate
2 : Drain
3 : Source
4 : Drain
0.4
2.3
0.1
2.3
1.7
2
1
0.4
0.4
9.5
4
4.6
2.6
6.05
6.5
SANYO : ATPAK
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --28A
RL=0.54Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
ATP103
50Ω
S
No. A1623-2/4
ATP103
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
ID= --14A
20
18
16
14
12
10
8
VDS= --10V
Single pulse
3
°C
25
2
C
5°
10
=
Tc
7
--2
°C
75
5
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
Drain Current, ID -- A
3
5 7 --100
20
=
VGS
10
0
--25
A
--28
V, I D=
25
50
75
100
125
td(off)
tf
100
7
5
tr
3
td(on)
2
5 7 --1.0
2
3
5 7 --10
150
IT15231
IS -- VSD
VGS=0V
Single pulse
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT15233
Ciss, Coss, Crss -- VDS
f=1MHz
3
2
--5.0
IT15229
14
= -, ID
V
5
.
--4
5
3
--4.5
5
7
5
75°
C
--4.0
--10
V GS=
IT15232
1000
7
3
--3.5
A
15
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
SW Time -- ID
2
--3.0
Case Temperature, Tc -- °C
VDD= --15V
VGS= --10V
10
7
--0.1
--2.5
25
0
--50
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
3
--2.0
Single pulse
IT15230
| yfs | -- ID
--1.5
RDS(on) -- Tc
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
--1.0
Gate-to-Source Voltage, VGS -- V
6
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
7
--0.5
30
22
Gate-to-Source Voltage, VGS -- V
0
IT15228
--28A
24
0
--2.0
Tc=25°C
Single pulse
28
26
--1.8
Tc=
75°C
--0.2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
25°
C
5°C
--10
--5
0
Tc=
7
--10
--20
°C
--15
--30
--2
5
VGS= --3.5V
--20
25°
C
--25
--40
--25°C
--30
--50
25°C
--16
.
--35
--60
--4.0V
Drain Current, ID -- A
--40
VDS= --10V
Single pulse
Tc=
--
--6
.0V
V
--8.0
--45
Drain Current, ID -- A
V
5
--4.
0V --10.0
V
--50
ID -- VGS
--70
Tc=25°C
Single pulse
25°
C
ID -- VDS
--55
Ciss
2
1000
7
Coss
Crss
5
3
2
2
Drain Current, ID -- A
3
5 7--100
2
IT15234
100
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT15235
No. A1623-3/4
ATP103
VGS -- Qg
VDS= --15V
ID= --55A
3
2
--8
--6
--4
--2
IDP= --165A
--100
7
5
ID= --55A
0
5
10
15
20
25
30
35
40
Total Gate Charge, Qg -- nC
PD -- Tc
DC
--10
7
5
Operation in
this area is
limited by RDS(on).
3
2
50
30
20
10
0
0
20
40
60
80
100
2
3
120
Case Temperature, Tc -- °C
140
160
IT15238
er
ati
on
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT15237
EAS -- Ta
120
40
op
Tc=25°C
Single pulse
IT15236
50
PW≤10μs 1
0μ
s
10
0
1m
μs
s
--1.0
7
5
--0.1
--0.1
Avalanche Energy derating factor -- %
60
45
1
10 0ms
0m
s
3
2
3
2
0
Allowable Power Dissipation, PD -- W
ASO
5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--10
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1623-4/4