SANYO ATP613

ATP613
Ordering number : ENA1903
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ATP613
General-Purpose Switching Device
Applications
Features
•
•
•
Reverse recovery time trr=60ns(typ.)
Input Capacitance Ciss=350pF(typ.)
Halogen free compliance
•
•
ON-resistance RDS(on)=1.55Ω(typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
500
V
±30
V
5.5
A
19
A
PW≤10μs, duty cycle≤1%
Source-to-Drain Diode Forward Current (DC)
ID
IDP
IS
Source-to-Drain Diode Forward Current (Pulse)
ISP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
PD
Tch
Tc=25°C
Channel Temperature
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
93
mJ
5.5
A
Drain Current (Pulse)
Avalanche Current *2
5.5
A
19
A
70
W
150
°C
Note : *1 VDD=99V, L=5mH, IAV=5.5A
*2 L≤5mH, Single pulse (Fig.1)
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
1.5
6.5
Packing Type: TL
0.4
0.4
0.5
4
4.6
2.6
Marking
0.8
2.3
0.6
2.3
6.05
4.6
9.5
LOT No.
TL
Electrical Connection
0.55
0.7
3
0.1
0.5
2
1
1.7
7.3
ATP613
0.4
2,4
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
SANYO : ATPAK
3
http://semicon.sanyo.com/en/network
D1510QB TKIM TC-00002545 No. A1903-1/5
ATP613
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
500
V(BR)DSS
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
3
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2.75A
1.5
Static Drain-to-Source On-State Resistance
RDS(on)
ID=2.75A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
14.2
ns
Rise Time
tr
td(off)
46
ns
37.6
ns
Turn-OFF Delay Time
Fall Time
ID=10mA, VGS=0V
VDS=400V, VGS=0V
V
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
μA
±100
nA
5
2.9
2.0
Ω
350
pF
68
pF
15
pF
VDS=30V, f=1MHz
See Fig.2
V
S
1.55
tf
Qg
Total Gate Charge
100
20.4
ns
13.8
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=5.5A, VGS=0V
1.1
Reverse Recovery Time
trr
See Fig.3
60
ns
Reverse Recovery Charge
Qrr
IS=5.5A, VGS=0V, di/dt=100A/μs
120
nC
VDS=200V, VGS=10V, ID=5.5A
Fig.1 Avalanche Resistance Test Circuit
D
≥50Ω
RG
10V
0V
VIN
G
1.5
V
VDD=200V
ID=2.75A
RL=72.8Ω
VIN
D
ATP613
VOUT
PW=10μs
D.C.≤0.5%
VDD
50Ω
nC
nC
Fig.2 Switching Time Test Circuit
L
S
10V
0V
3.2
7.6
G
ATP613
P.G
RGS=50Ω
S
Fig.3 Reverse Recovery Time Resistance Test Circuit
ATP613
D
500μH
G
S
VDD=50V
Driver MOSFET
No. A1903-2/5
ATP613
ID -- VDS
6
7V
2
4
6
8
10
12
14
16
18
0
20
4.0
3.5
3.0
Tc=75°C
2.0
25°C
1.5
--25°C
1.0
0.5
2
4
6
8
10
12
5°C
1.0
7
5
Tc=
3
2
--2
75°
C
0.1
7
5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
2
100
tf
5
td (off)
3
tr
2
10
0.1
3
5
7
1.0
25°
C
=
V GS
1.5
1.0
0.5
--25
0
25
2
Drain Current, ID -- A
3
5
7
10
IT16207
50
75
100
125
150
IT16204
IS -- VSD
VGS=0V
Single pulse
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ciss, Coss, Crss -- VDS
1.6
IT16206
f=1MHz
5
Ciss
3
2
100
Cos
s
7
5
3
Crs
s
2
td(on)
2
2.0
7
Ciss, Coss, Crss -- pF
3
7
=2.
, ID
V
0
1
1000
VDD=200V
VGS=10V
5
75A
2.5
Diode Forward Voltage, VSD -- V
SW Time -- ID
7
3.0
0.01
5 7 10
IT16205
Drain Current, ID -- A
1000
3.5
100
7
5
3
2
3
2
0.01
0.01
12
IT16202
4.0
Case Temperature, Tc -- °C
Source Current, IS -- A
C
25°
10
Single pulse
0
--50
VDS=10V
3
2
8
RDS(on) -- Tc
IT16203
| yfs | -- ID
10
7
5
6
4.5
14 15
Gate-to-Source Voltage, VGS -- V
4
5.0
0
0
2
Gate-to-Source Voltage, VGS -- V
ID=2.75A
Single pulse
2.5
0
IT16201
RDS(on) -- VGS
4.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
4
°C
25°
C
--25
°C
2
5.0
Forward Transfer Admittance, | yfs | -- S
6
Tc=
75
0
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
75°C
2
6V
VGS=5V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0
8
C
8V
25°C
Tc=
75°
10V
8
4
Tc=
--25
°C
10
Drain Current, ID -- A
Drain Current, ID -- A
VDS=20V
15V
10
ID -- VGS
12
Tc=25°C
--25
°C
12
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT16208
No. A1903-3/5
ATP613
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Total Gate Charge, Qg -- nC
PD -- Tc
14
16
50
40
30
20
10
0
20
40
60
80
100
10
7
5
3
2
0μ
ID=5.5A
10
1.0
7
5
3
2
0.1
7
5
3
2
120
Case Temperature, Tc -- °C
140
160
IT16211
s
s
1m
10
s
m
s
DC 0m
op s
er
ati
o
Operation in
this area is
limited by RDS(on).
n
Tc=25°C
2
3
5 7 100
2
3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
60
10μ
10
IT16209
70
0
IDP=19A (PW≤10μs)
0.01 Single pulse
2 3
5 7 10
1.0
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
ASO
100
7
5
3
2
VDS=200V
ID=5.5A
5 7 1000
IT16710
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT16212
No. A1903-4/5
ATP613
Note on usage : Since the ATP613 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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applications of our customer who is considering such use and/or outside the scope of our intended standard
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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independent device, the customer should always evaluate and test devices mounted in the customer' s
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of December, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1903-5/5