SANYO BFL4001

BFL4001
Ordering number : ENA1638
SANYO Semiconductors
DATA SHEET
BFL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
High-speed switching.
Avalanche resistance guarantee.
10V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900
Gate-to-Source Voltage
VGSS
±30
V
Limited only by maximum temperature Tch=150°C
6.5
A
IDpack*2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
4.1
A
IDP
PW≤10μs, duty cycle≤1%
13
A
2.0
W
Drain Current (DC)
Drain Current (Pulse)
IDc*1
V
Allowable Power Dissipation
PD
37
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
237
mJ
6.5
A
Avalanche Current *5
Tc=25°C (SANYO’s ideal heat dissipation condition*)3
Note : *1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=10mH, IAV=6.5A
*5 L≤10mH, single pulse
Marking : FL4001
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
31010QB TK IM TC-00002256 No. A1638-1/5
BFL4001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=10mA, VGS=0V
VDS=720V, VGS=0V
Ratings
min
typ
Unit
max
900
V
1.0
mA
±100
nA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1mA
VDS=20V, ID=3.25A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3.25A, VGS=10V
Input Capacitance
Ciss
VDS=30V, f=1MHz
850
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
130
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
43
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
49
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
156
ns
Fall Time
tf
See specified Test Circuit.
52
ns
VDS=200V, VGS=10V, ID=6.5A
VDS=200V, VGS=10V, ID=6.5A
44
nC
7.0
nC
22
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
2.0
1.8
4.0
3.6
2.1
VDS=200V, VGS=10V, ID=6.5A
IS=6.5A, VGS=0V
V
S
2.7
0.85
1.2
Ω
V
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
2.8
0.6
16.1
16.0
7.2
3.5
3.2
1.2
14.0
3.6
0.9
1.2
0.75
0.7
1 : Gate
2 : Drain
3 : Source
2.4
1 2 3
2.55
SANYO : TO-220FI(LS)
2.55
Switching Time Test Circuit
Avalanche Resistance Test Circuit
VDD=200V
PW=10μs
D.C.≤0.5%
L
ID=3.25A
RL=61.5Ω
VGS=10V
D
≥50Ω
RG
VOUT
10V
0V
G
BFL4001
50Ω
VDD
BFL4001
P.G
RGS=50Ω
S
No. A1638-2/5
BFL4001
ID -- VDS
14
ID -- VGS
14
Tc=25°C
12
VDS=20V
12
10
20V
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
10V
7V
8
6
6V
4
5V
2
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
25°C
6
75°C
4
0
40
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
IT15294
RDS(on) -- VGS
6
8
2
VGS=4V
0
10
RDS(on) -- Tc
7
9
10
IT15295
Tc=75°C
3
25°C
2
--25°C
1
4
5
6
7
8
9
10
11
12
13
Gate-to-Source Voltage, VGS -- V
°C
25
2
1.0
=
Tc
7
C
5°
--2
°C
75
5
3
2
0.1
7
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
25
50
75
100
125
150
IT15297
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
SW Time -- ID
0.01
0.2
5 7 10
IT15298
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
5
VDD=200V
VGS=10V
1.2
IT15299
f=1MHz
3
2
3
td (off)
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
0
3
2
Drain Current, ID -- A
7
--25
3
2
VDS=20V
3
1
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
=
V GS
2
0
--50
15
A
.25
=3
, ID
V
10
3
IT15296
| yfs | -- ID
7
14
4
Tc=
75°C
0
5
--25°
C
4
6
25°C
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=3.25A
100
7
5
tf
3
tr
td(on)
2
Ciss
1000
7
5
3
2
Coss
100
7
5
Crs
s
3
2
10
7
0.1
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
7
10
2
3
IT15300
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT15301
No. A1638-3/5
BFL4001
VGS -- Qg
10
Drain Current, ID -- A
2
1
3
2
0
5
10
15
20
25
30
35
40
45
Total Gate Charge, Qg -- nC
0.5
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT15304
EAS -- Ta
120
5 7 1.0
2 3
5 7 10
2 3
5 7100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
20
2 3
PD -- Tc
40
1.5
0
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
Tc=25°C
Single pulse
0.01
0.1
50
2.0
0
Operation in
this area is
limited by RDS(on).
IT15302
PD -- Ta
2.5
Avalanche Energy derating factor -- %
3
2
0.1
7
5
s
0μ
3
1.0
7
5
on
ati
er
4
s
op
5
1m
IDpack(*2)=4.1A
DC
6
3
2
μs
s
m s
10 0m
7
10
IDc(*1)=6.5A
10
8
0
IDP=13A (PW≤10μs)
10
7
5
10
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
VDS=200V
ID=6.5A
5 71000 2
IT15303
37
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15305
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1638-4/5
BFL4001
Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1638-5/5