BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 Gate-to-Source Voltage VGSS ±30 V Limited only by maximum temperature Tch=150°C 16 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 11 A IDP PW≤10μs, duty cycle≤1% 60 A 2.0 W IDc*1 Drain Current (DC) Drain Current (Pulse) V Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 159 mJ 16 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7509-002 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 FL4037 0.6 16.1 16.0 2 LOT No. 0.75 2.4 1 2 3 2.55 1 1.2 14.0 3.6 0.9 1.2 2.55 0.7 1 : Gate 2 : Drain 3 : Source 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 90810QB TK IM TC-00002471 No. A1831-1/5 BFL4037 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 500 V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±24V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=8A Static Drain-to-Source On-State Resistance RDS(on) ID=8A, VGS=10V 0.33 Input Capacitance Ciss VDS=30V, f=1MHz 1200 Output Capacitance Coss VDS=30V, f=1MHz 250 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 55 pF Turn-ON Delay Time td(on) tr See Fig.2 26.5 ns Rise Time See Fig.2 78 ns Turn-OFF Delay Time td(off) See Fig.2 146 ns Fall Time tf Qg See Fig.2 57 ns VDS=200V, VGS=10V, ID=16A 48.6 nC 8.2 nC 27.4 0.95 600 ns 5000 nC Total Gate Charge ID=10mA, VGS=0V VDS=400V, VGS=0V V Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Qgs Qgd Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=16A VDS=200V, VGS=10V, ID=16A IS=16A, VGS=0V Reverse Recovery Time trr See Fig.3 Reverse Recovery Charge Qrr IS=16A, VGS=0V, di/dt=100A/μs 9 10V 0V L V S 0.43 Ω pF nC 1.3 V VDD=200V VIN ID=8A RL=25Ω VIN G BFL4037 S 50Ω μA Fig.2 Switching Time Test Circuit ≥50Ω RG 10V 0V ±10 5 4.5 Gate-to-Source Charge D μA 3 Gate-to-Drain “Miller” Charge Fig.1 Avalanche Resistance Test Circuit 100 VDD D PW=10μs D.C.≤0.5% VOUT G BFL4037 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Test Circuit BFL4037 D 500μH G S VDD=50V Driver MOSFET No. A1831-2/5 BFL4037 ID -- VDS Drain Current, ID -- A 35 8V 25 20 15 10 10 15 20 25 Tc=75°C 0.4 25°C --25°C 0.2 9 11 13 2 5 5°C = Tc 3 --2 75 °C 2 1.0 7 0.6 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 0.5 5 20 IT11733 =1 S , VG 0.3 0.2 0.1 --25 0 25 50 75 100 125 150 IT11735 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 18 A =8 ID 0.4 IT11736 SW Time -- ID 1000 3 16 0V 3 2 5 3 0.1 14 3 2 5°C 7 12 0.7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 10 Case Temperature, Tc -- °C VDS=10V 10 8 0.8 IT11734 | yfs | -- ID 3 6 RDS(on) -- Tc 0 --50 15 Gate-to-Source Voltage, VGS -- V 1.4 IT11737 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.6 7 4 0.9 0.8 5 2 1.0 1.0 3 0 Gate-to-Source Voltage, VGS -- V ID=8A 0 15 IT11732 RDS(on) -- VGS 1.2 20 0 30 Drain-to-Source Voltage, VDS -- V 25 5 VGS=5V 5 75°C 10 6V 0 30 --25°C 30 5 Tc= --25°C 25°C 40 10V 35 Drain Current, ID -- A VDS=20V 15V 40 0 ID -- VGS 45 Tc=25°C Tc=7 5°C 25°C 45 td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT11738 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11739 No. A1831-3/5 BFL4037 VGS -- Qg 10 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 10 20 40 30 50 Total Gate Charge, Qg -- nC 1.0 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % IT11730 EAS -- Ta 120 160 1m s ms IDpack(*2)=11A 10 DC 1.0 7 5 3 2 10 0m era tio Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 s op n *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.5 20 10 7 5 3 2 10 μs 0μ s 10 IDc(*1)=16A PD -- Tc 45 2.0 0 IDP=60A (PW≤10μs) IT11740 PD -- Ta 2.5 0 ASO 2 VDS=200V ID=16A 2 3 5 7 IT15944 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11742 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1831-4/5 BFL4037 Note on usage : Since the BFL4037 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2010. Specifications and information herein are subject to change without notice. PS No. A1831-5/5