CPH6122 Ordering number : EN7225A SANYO Semiconductors DATA SHEET CPH6122 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --30 V Collector-to-Emitter Voltage VCEO --30 V Emitter-to-Bass Voltage VEBO --5 V IC --3 A --5 A Bass Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) --600 Mounted on ceramic board (600mm2×0.8mm) mA 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Cob Marking : AW Conditions VCB=--30V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--500mA VCE=--10V, IC=--500mA VCB=--10V, f=1MHz Ratings min typ max 200 Unit --0.1 µA --0.1 µA 560 400 MHz 25 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1106EA SY IM / 72602 TS IM TA-100026 No.7225-1/4 CPH6122 Continued from preceding page. Parameter Symbol VCE(sat)1 VCE(sat)2 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Bass Breakdown Voltage V(BR)EBO Turn-On Time Fall Time min typ IC=--1.5A, IB=--30mA IC=--1.5A, IB=--75mA IC=--1.5A, IB=--30mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ tf Unit max --180 --270 mV --120 --180 mV --0.83 --1.2 V --30 V --30 V IE=--10µA, IC=0A See specified Test Circuit. ton tstg Storage Time Ratings Conditions --5 V 50 ns See specified Test Circuit. 270 ns See specified Test Circuit. 27 ns Package Dimensions Switching Time Test Circuit 6 5 4 OUTPUT IB2 RB VR 0.05 1.6 2.8 IB1 PW=20µs D.C.≤1% INPUT 0.15 2.9 0.2 0.6 unit : mm (typ) 7018A-002 24Ω 50Ω 1 2 0.95 3 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector 0.4 0.9 0.2 0.6 + + 100µF 470µF VCC= --12V VBE=5V --20IB1=20IB2=IC= --500mA SANYO : CPH6 IC -- VCE --2.5 Collector Current, IC -- A --8mA --6mA --1.2 --4mA --1.0 --0.8 --2mA --0.6 --0.4 --2.0 --1.5 Ta=75 °C 25°C --25°C A --3 --4 0 --1.4 VCE= --2V --10mA A --1.6 0 --2 --50m Collector Current, IC -- A --1.8 IC -- VBE --3.0 mA 0m mA --2.0 --1.0 --0.5 --0.2 IB=0mA 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V 0 Ta=75°C 3 25°C --25°C 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT04556 --0.4 --0.6 --0.8 --1.0 Bass-to-Emitter Voltage, VBE -- V IT04555 fT -- IC 5 Gain-Bandwidth Product, FT -- MHz 5 --0.2 IT04554 VCE= --2V 7 10 --0.01 0 --1.0 hFE -- IC 1000 DC Current Gain, hFE --0.9 VCE= --10V 3 2 100 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT04557 No.7225-2/4 CPH6122 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 7 5 3 2 C C 75° Ta= 5°C --2 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 5 2 2 3 5 0m --1.0 7 5 DC s op era 3 tio 2 n --0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE -- V 7 --1.0 2 3 5 7 IT04559 --1.0 °C Ta= --25 ° 25 C 75°C 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IT04561 PC -- Ta 1.2 Collector Dissipation, PC -- W Collector Current, IC -- A 10 ms 5 1.3 s s 0µ 0µ 50 s 10 2 3 IC / IB=50 1.4 1m 2 Collector Current, IC -- A <50µs ICP= --5A IC= --3A 10 3 7 --0.1 VBE(sat) -- IC ASO --10 7 5 = Ta 3 5 --0.01 5 7 --10 IT04560 Collector Current, IC -- A °C 75 C 5° --2 --100 2 --1000 7 5 2 Collector Current, IC -- A IC / IB=50 --100 3 IT04558 VCE(sat) -- IC 25° 5 --10 --0.01 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 IC / IB=20 7 7 10 --1.0 VCB(sat) -- IC --1000 25 °C 100 M ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (6 00 m 0.4 m2 ✕ 0. 8m m ) 0.2 0 3 5 IT04562 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04563 No.7225-3/4 CPH6122 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No.7225-4/4