Ordering number : EN1892B DCA010 SANYO Semiconductors DATA SHEET DCA010 Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode Features • • • Package Dimensions Ideally suited for use in hybrid ICs because of very small-sized package. Fast switching speed. Small interterminal capacitance. unit : mm 1117B [DCA010] 0.5 0.4 3 Electrical Connection 1.5 2.5 Anode 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 2 Cathode (Top view) 0.8 1.1 1 0.5 3 Cathode 1 : Cathode 2 : Cathode 3 : Anode SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Symbol VRM VR IFM Average Rectified Current IO Surge Current (1µs) IFSM Allowable Power Dissipation Junction Temperature Storage Temperature P Tj Tstg Conditions Unit rating Total rating Unit rating Total rating Unit rating Total rating Ratings 85 80 300 450 100 150 4 6 200 125 --55 to +125 Unit V V mA mA mA mA A A mW °C °C Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106 / 12000 GI IM / 2019MO, TS No.1892-1/3 DCA010 Electrical Characteristics at Ta=25°C Parameter Forward Voltage Symbol VF1 VF2 VF3 IR1 IR2 C trr Reverse Current Interterminal Capacitance Reverse Recovery Time Conditions IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0, f=1MHz IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp min typ 0.61 0.74 max 1.20 0.1 0.5 4.0 4.0 Unit V V V µA µA pF ns Marking : W5 Reverse Recovery Time Test Circuit 0.01µF DUT 0.1Irp IF=10mA 0 2kΩ 50Ω 50Ω Irp --6V 50ns trr IF -- VF 103 5 Ta=100°C 5 2 2 Reverse Current, IR -- µA 102 5 °C --25 2 1.0 °C 5 25 00 °C 2 10 Ta =1 Forward Current, IF -- mA IR -- VR 10 5 2 10--1 1.0 75°C 5 2 50°C 10--1 5 25°C 2 10--2 5 5 2 10--3 2 10--2 0 0.2 0.4 0.6 0.8 1.0 Forward Voltage, VF -- V 0 1.2 40 60 80 IT02034 C -- VR 3.0 f=1MHz 5 Interterminal Capacitance, C -- pF Reverse Recovery Time, trr -- ns 7 3 2 10 7 5 3 2 1.0 7 5 0.1 100 Reverse Voltage, VR -- V trr -- IF 100 20 IT02033 2 3 5 1.0 2 3 5 10 Forward Current, IF -- mA 2 3 5 100 IT02035 2.5 2.0 1.5 1.0 0.5 0 0.1 2 3 5 1.0 2 3 5 10 2 Reverse Voltage, VR -- V 3 5 2 100 IT02036 No.1892-2/3 DCA010 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Feburuary, 1999. Specifications and information herein are subject to change without notice. PS No.1892-3/3