QEE113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description ■ λ= 940nm The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = GaAs ■ Matched Photosensor: QSE113 ■ Medium Wide Emission Angle, 50° ■ Package Material: Clear Epoxy ■ High Output Power ■ Gray stripe on the top side Package Dimensions 0.175 (4.44) 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE Schematic 0.020 (0.51) SQ. (2X) 0.100 (2.54) ANODE CATHODE 0.030 (0.76) 0.100 (2.54) NOM Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 www.fairchildsemi.com QEE113 — Plastic Infrared Light Emitting Diode August 2008 Symbol Parameter Rating Units TOPR Operating Temperature -40 to +100 °C TSTG Storage Temperature -40 to +100 °C TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C TSOL-F (Flow)(2,3) 260 for 10 sec °C 50 mA IF Soldering Temperature Continuous Forward Current VR Reverse Voltage PD Power Dissipation(1) 5 V 100 mW Notes: 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical / Optical Characteristics (TA = 25°C) Symbol Parameter λPE Peak Emission Wavelength TCλ Temperature Coefficient Test Conditions IF = 20mA 2Θ1/2 Emission Angle IF = 100mA VF Forward Voltage IF = 100mA, tp = 20ms TCVF VR = 5V IE Radiant Intensity IF = 100mA, tp = 20ms Temperature Coefficient tf Fall Time Cj Junction Capacitance ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 IF = 100mA VR = 0V 3 Units 945 nm 0.3 nm / °C ° -2 Reverse Current Rise Time Max. 1.5 Temperature Coefficient tr Typ. 50 IR TCIE Min. 7.5 V mV / °C 10 µA 12 mW/sr -0.7 % / °C 800 ns 800 ns 14 pF www.fairchildsemi.com 2 QEE113 — Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Fig. 1 Normalized Intensity vs. Wavelength Fig. 2 Peak Wavelength vs. Ambient Temperature 1.0 λPE – PEAK EMISSION WAVELENGTH 975 NORMALIZED INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 700 750 800 850 900 950 1,000 IF = 20mA DC 970 965 960 955 950 945 940 935 1,050 0 10 20 λ (nm) Ie – NORMALIZED RADIANT INTENSITY Ie – NORMALIZED RADIANT INTENSITY 1 60 70 80 90 100 100 Normalized to: IF = 20mA Pulsed tPW = 20ms Duty Cycle = 4% TA = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 10 1000 0 10 20 30 40 50 60 70 80 90 100 TA – AMBIENT TEMPERTURE (°C) IF – FORWARD CURRENT (mA) Fig. 6 Forward Voltage vs. Ambient Temperature Fig. 5 Forward Voltage vs. Forward Current 1.55 3.5 IF Pulsed tPW = 20ms Duty Cycle = 4% TA = 25°C VF – FORWARD VOLTAGE (V) VF – FORWARD VOLTAGE (V) 50 1.4 Normalized to: IF = 100mA Pulsed tPW = 20ms Duty Cycle = 4% TA = 25°C 2.5 2.0 1.5 1.0 10 40 Fig. 4 Normalized Radient Intensity vs. Ambient Temperature Fig. 3 Normalized Radiant Intensity vs. Forward Current 10 3.0 30 TA – AMBIENT TEMPERTURE (°C) IF = 20mA Pulsed tPW = 20ms Duty Cycle = 4% 1.50 1.45 1.40 1.35 1.30 1.25 100 0 1000 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 10 20 30 40 50 60 70 80 90 100 TA – AMBIENT TEMPERTURE (°C) IF – FORWARD CURRENT (mA) www.fairchildsemi.com 3 QEE113 — Plastic Infrared Light Emitting Diode Typical Performance Curves IC (ON) – NORMALIZED COLLECTOR CURRENT Fig. 8 Coupling Characteristics of QEE113 And QSE113 Fig. 7 Radiation Diagram 110° 100° 90° 80° 70° 120° 60° 130° 50° 140° 40° 150° 30° 160° 20° 170° 180° 1.0 10° 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0° 1.0 1.0 Normalized to: d = 0 inch IF Pulsed tpw = 100µs Duty Cycle = 0.1% VCC = 5V RL = 100Ω TA = 25°C 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 LENS TIP SEPARATION (inches) ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 www.fairchildsemi.com 4 QEE113 — Plastic Infrared Light Emitting Diode Typical Performance Curves (Continued) Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ ® FACT FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ PDP SPM™ Power-SPM™ ® The Power Franchise TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 www.fairchildsemi.com 5 QEE113 — Plastic Infrared Light Emitting Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.