FW813 Ordering number : ENA1884 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW813 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=39mΩ (typ.) 4V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 60 V ±20 V 5 A PW≤10μs, duty cycle≤1% 52 A When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 2.3 W Total Dissipation PD PT 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Package Dimensions Product & Package Information unit : mm (typ) 7005A-003 • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1,000 pcs./reel 8 0.2 0.3 0.8 5.0 5 Packing Type : TL Marking 1.5 1.8 MAX W813 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 TL LOT No. Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOP8 http://semicon.sanyo.com/en/network D0810PA TKIM TC-00002348 No. A1884-1/4 FW813 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=60V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A 4.2 RDS(on)1 ID=5A, VGS=10V 39 49 mΩ RDS(on)2 ID=3A, VGS=4.5V 54 76 mΩ RDS(on)3 ID=3A, VGS=4V 64 90 mΩ Input Capacitance Ciss Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time 60 V 1.2 1 μA ±10 μA 2.6 V S 725 pF 60 pF VDS=20V, f=1MHz See specified Test Circuit. 45 pF 9.6 ns See specified Test Circuit. 18 ns td(off) See specified Test Circuit. 49 ns Fall Time tf See specified Test Circuit. 27 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=5A 15 nC Gate-to-Source Charge Qgs 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=5A VDS=30V, VGS=10V, ID=5A 3.2 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.81 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=5A RL=6Ω VIN D PW=10μs D.C.≤1% VOUT G FW813 P.G 50Ω ID -- VDS 4.5V 4.0 V 6.0V 5 V 3.5 8 6 5 4 3 2 1 1 VGS=2.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16122 0 25 0 0.5 1.0 1.5 2.0 °C 2.5 °C Ta= 75°C 3.0V 7 --25 2 0 VDS=10V 9 Drain Current, ID -- A 3 ID -- VGS 10 16.0V 10.0V 4 Drain Current, ID -- A S 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT16123 No. A1884-2/4 FW813 RDS(on) -- VGS 5A 100 80 60 40 20 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V = Ta °C 25 -- 75 7 °C 5 3 20 --40 --20 0 20 40 60 80 100 120 140 160 IT16125 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 7 5 tf td(on) 10 7 tr 5 3 0.4 0.6 0.8 1.0 1.2 1.4 IT16127 Ciss, Coss, Crss -- VDS Ciss 7 f=1MHz 5 3 2 100 7 Coss 5 Crss 3 2 2 1.0 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A VGS -- Qg 10 5 10 7 10 IT16128 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Total Gate Charge, Qg -- nC IT16130 5 0 10 15 20 25 30 35 40 45 50 55 Drain-to-Source Voltage, VDS -- V VDS=30V ID=5A 9 0 0.2 1000 Ciss, Coss, Crss -- pF 3 0 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V td (off) 2 0.01 5 7 10 IT16126 Drain Current, ID -- A Switching Time, SW Time -- ns 40 3 2 0.1 0.01 Gate-to-Source Voltage, VGS -- V =3A V, I D 5 . 4 = 5A VGS I = 0V, D . 0 1 = VGS 60 10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 25° 2 1.0 =4.0 VGS Ambient Temperature, Ta -- °C 5 3 =3A V, I D 80 0 --60 16 VDS=10V 7 100 IT16124 | yfs | -- ID 10 120 °C 25°C --25°C ID=3A Ta=7 5 120 RDS(on) -- Ta 140 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 10 7 5 3 2 ASO IDP=52A (PW≤10μs) 10 10 ID=5A 1m s ms 10 DC μs 0μ s 10 0m 1.0 7 5 3 2 0.1 7 5 3 2 60 IT16129 s 10 s op er Operation in this area is limited by RDS(on). ati on Ta=25°C Single pulse When mounted on ceramic substrate (2000mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16131 No. A1884-3/4 FW813 Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.5 2.3 2.0 To t al 1.5 1u di ss nit ip ati on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16132 Allowable Power Dissipation(FET1), PD -- W PD -- Ta 3.0 PD (FET1) -- PD (FET2) 2.4 2.3 2.2 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.3 2.4 Allowable Power Dissipation(FET2), PD -- W IT16133 Note on usage : Since the FW813 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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