SANYO LA5735MC

Ordering number : ENA2022
Monolithic Linear IC
Separately-Excited Step-Down
LA5735MC
Switching Regulator
(Variable Type)
Overview
The LA5735MC is a separately-excited step-down switching regulator (variable type).
Functions
• Time-base generator (300kHz) incorporated.
• Current limiter incorporated.
• Thermal shutdown circuit incorporated.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Input voltage
Symbol
Conditions
Ratings
Unit
VIN
34
V
SW pin application reverse voltage
VSW
-1
V
VOS pin application voltage
VVOS
-0.2 to 7
V
Allowable power dissipation
Pd max
0.75
W
Topr
-30 to +125
°C
Storage temperature
Tstg
-40 to +150
°C
Junction temperature
Tjmax
150
°C
Operating temperature
Mounted on a circuit board.*
* Specified circuit board : 114.3×76.1×1.6mm3, glass epoxy board.
Caution 1) Absolute maximum ratings represent the value which cannot be exceeded for any length of time.
Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high
voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details.
Recommended Operating Conditions at Ta = 25°C
Parameter
Input voltage range
Symbol
VIN
Conditions
Ratings
Unit
4.5 to 32
V
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
32812 SY 20120207-S00002 No.A2022-1/6
LA5735MC
Electrical Characteristics at Ta = 25°C, VIN = 15V
Ratings
Parameter
Symbol
Conditions
Unit
min
Reference voltage
VOS
Reference pin bias current
IFB
Switching frequency
fosc
Short-circuit protection circuit
fscp
IO = 0.3A
typ
1.20
240
max
1.23
1.26
V
1
2
μA
300
360
kHz
15
kHz
operating switching frequency
Saturation voltage
Vsat
IOUT = 0.3A, VOS = 0V
Maximum on duty
D max
VOS = 0V
100
%
Minimum on duty
D min
VOS = 5V
0
%
Output leakage current
Ilk
SWOUT = -0.4V
Supply current
Iin
VOS = 2V
Current limiter operating current
IS
Thermal shutdown operating
1
1.15
5
V
200
μA
10
mA
0.7
A
TSD
Designed target value. *
165
°C
ΔTSD
Designed target value. *
15
°C
temperature
Thermal shutdown Hysteresis
width
* Design target value : Design guarantee values are replaced with electrical measurements, and are not measured by temperature.
Package Dimensions
unit : mm (typ)
3424
4.9
0.2
Allowable power dissipation, Pd max - W
0.835
0.375
6.0
3.9
0.42
1.75 MAX
1.27
2
0.175
1
Pd max -- Ta
1
8
Designated board : 114.3×76.1×1.6mm3
glass epoxy
0.8
0.75
Mounted on a board
0.6
0.4
0.2
0.15
0
--30
0
30
60
90
120
150
Ambient temperature, Ta - C
SANYO : SOIC8
No.A2022-2/6
LA5735MC
Pin Assignment
NC
NC
GND
NC
VIN
NC SWOUT VOS
Block Diagram
VIN
3 SWOUT
1
Reg.
OCP
Reset
OSC
Drive
NC
2
NC
5
NC
7
NC
8
Comp.
TSD
4 VOS
Amp.
VREF
6
GND
Note : Since the NC pins are not connected within the IC package, they can be used as connection points.
Application Circuit Example
L1
VIN
SWOUT
LA5735MC
C3
+
C1
+
C2
D1
VOS
R2
GND
R1
Note: Insome cases, the output may not turn on if power is applied when a load is connected. If this is a problem, increase
the value of the inductor.
No.A2022-3/6
LA5735MC
Protection Circuit Functional Descriptions
1. Overcurrent protection function
The overcurrent protection function detects, on a pulse-by-pulse basis, the output transistor current and turns off that
output transistor current if it exceeds 0.7A in a pulse-by-pulse manner.
Limit current
Inductor current
SWOUT voltage
2. Short circuit protection function
This IC prevents the current from increasing when the outputs are shorted by setting the switching frequency to 15kHz
if the VOS pin voltage falls below 0.8V.
Note : At startup, since the switching frequency will be 15kHz while the VOS pin voltage is 0.8V or lower, the current
capacity is reduced. If the load is applied at startup and the applications has trouble starting, increase the value of
the inductor to resolve this problem.
Timing Chart
VIN voltage
30kHz
160kHz
SWOUT voltage
1.23V
0.8V
VOS voltage
0V
No.A2022-4/6
LA5735MC
Part selection and set
1. Resistors R1 and R2
R1 and R2 are resistors to set the output voltage. When the large resistance value is set, the error of set voltage
increases due to the VOS pin current. The output voltage may also increases due to the leak current of switching
transistor at light load. In consequence, it is essential to see R1 and R2 currnet to around 500μA.
R1=
1.23V
≈ 2.4kΩ
500μA
We recommend values in the range 2.0 to 2.4kΩ
VOUT
R2= 1.23V -1 × R1
The following equation gives the output voltage set by R1 and R2.
R2
VO= (1+ R1 ) × 1.23V (typ)
2. Capacitor C1, C2 and C3
The large ripple current flows through C1 and C2, so that the high-frequency low-impedance product for switching
power supply must be used. Do not use, for C2, a capacitor eith extremely small equivalent series resistance (ESR),
such as ceramic capacitor, tantalum capacitor. Otherwise, the output waveform may develop abnormal oscillation.
The C2 capacitance and ESR value stabilization conditions are as follows:
1
≤ 20kHz
2 × π × C2 × ESR
C3 is a capacitor for phase compensation of the feedback loop. Abnormal oscillation may occur when the C2
capacitance value is small or the equivalent series resistance is small. In this case, addition od the capacitance of C3
enables phase compensation, contributing to stabilization of power supply.
3. Input capacitor: Effective-value current
The AC ripple currents flowing in the input capacitor is large than that in the output capacitor. The equation
expressing the effective-value current is as follows. Use the capacitor within the rated current range.
IC1=
1
Vout
Vout
) + × ΔIR 2 )
(Iout 2 (1 −
12
Vin
Vin
[Arms]
4. Output capacitor: Effective-value current
The AC ripple current flowing in the output capacitor is the triabgular wave. Therefore, its effective value is
obtained from the following equation. Select the output capacitor so that it does not exceed the allowable ripple
current value.
VOUT (VIN - VOUT)
1
IC2 = 2 3 ×
L × fsw × VIN
√
fsw = Switching frequency
[Arms]
300kHz
5. Choke coil L1
Note that choke coil heating due to overload or load shorting may be a problem.The inductance value can be
determined from the following equation once the input voltage, output voltage, and current ripple conditions are
known. ΔIR indicates the ripple current value.
Reference example : VIN = 12V, VOUT = 5V, ΔIR = 150mA
L=
VIN - VOUT - Vsat
× Ton
ΔIR
12 - 5.0 - 1.0
× 1.58 × 10-6
0.15
≈ 68μH
T
Ton = ((V - V
Vsat)/(V
IN OUT
OUT + VF)) + 1
Toff = T - Ton
t : Switching repetition period ··· 3.33μs is assumed for the calculation
VF : Schottky diode forward voltage0.4V is assumed for the calculation
=
No.A2022-5/6
LA5735MC
6. Inductance current : peak value
The ripple current peak value must be held within the rated current values for the inductor used. Here, IRP is the
ripple current. IRP can be determined from the following equation.
Reference example : VIN = 12V, VOUT = 5V, IOUT = 0.5A, L = 68μH
VIN - VOUT - Vsat
× Ton
2L
12 - 5.0 - 1.0
× 1.58 × 10-6
= 0.5 +
2 × 68 × 10-6
IRP = IOUT +
≈ 0.57A
7. Inductance current : ripple current value
Here ΔIR is the ripple current. ΔIR can be determined from the following equation. If the load current becomes less
than one half the ripple current, the inductor current will become discontinuous.
VIN - VOUT - Vsat
× Ton
L
12 - 5.0 - 1.0
× 1.58 × 10-6
=
68 × 10-6
≈ 0.15A
ΔIR =
8. Diode D1
A Schottky barrier diode must be used for this diode. If a fast recovery diode is used, it is possible that the IC could
be destroyed by the applied reverse voltage due to the recovery and the on-state voltage.
9. Diode current: peak current
Applications must be designed so that the peak value of the diode current remains within the rated current of the
diode. The peak value of the diode current will be the same current as the peak value of the inductor current.
10. Repetitive peak reverse voltage
Applications must be designed so that the repetitive peak reverse voltage remains within the voltage rating of the
diode. Here, VRRM is the repetitive peak reverse voltage. VRRM can be determined from the following equation.
VRRM ≥ VCC
Since noise voltage and other terms will be added in actual operation, the voltage handling capacity of the device
should be about 1.5 times that given by the above calculation.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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above.
This catalog provides information as of March, 2012. Specifications and information herein are subject
to change without notice.
PS No.A2022-6/6