Ordering number : ENA0377 LB11988V Monolithic Digital IC Fan Motor Driver Overview The LB11988V is a motor driver IC optimal for driving the DC fan motors. Features • 3-Phase full-wave current-linear drive system. • Current limiter circuit built in. • Output stage upper/lower over-saturation prevention circuit built in. • Forward/backward rotation direction setting circuit built in. • FG amplifier built in. • Thermal shutdown circuit built in. Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Maximum supply voltage Conditions Ratings Unit VCC max 24 V VS max 24 V Maximum output current IO max Allowable power dissipation Pd max Independent IC 1.3 A 0.5 W Operating temperature range Topr -30 to +75 °C Storage temperature range Tstg -55 to +150 °C Allowable Operating Range at Ta = 25°C Parameter Supply voltage Hall input amplitude Symbol Conditions Ratings Unit VS 5 to 22 VCC 7 to 22 VHALL Between hall inputs ±30 to ±80 V mVo-p Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. D1306 TI IM B8-7391 No.A0377-1/7 LB11988V Electrical Characteristics at Ta = 25°C, VCC = 12V, VS = 12V Parameter Symbol Ratings Conditions min VCC supply current ICC RL = 560Ω (Y) VOsat1 IO = 500mA, Rf = 0.5Ω, unit typ max 15 24 2.1 2.6 2.6 3.5 mA Output Output saturation voltage Sink+Source (with saturation prevention) V VOsat2 IO = 1.0A, Rf = 0Ω, Sink+Source (with saturation prevention) Output leakage current IOleak 1.0 mA +6 mV 3 µA 3 VCC-3 V 8 Hall amplifier Input offset voltage Voff(HALL) Input bias current Ib(HALL) Common-mode input voltage Vcm(HALL) -6 VIN, WIN 1 FR Threshold voltage VFRTH 4 Input bias current Ib(FR) -5 V µA Current limit LIM pin current limit level ILIM Rf = 0.5Ω, Hall input logic fixed (U, V, W = H, H, L) 1 A 0.28 V Saturation Saturation prevention circuit VOsat(DET) lower set voltage RL = 560Ω (Y),Rf = 0.5Ω Voltage between each OUT and RF FG Amplifier Output “High” voltage Vfgoh(SH) Output “Low” voltage Vfgol(SH) Hysteresis width Vhys TSD operating temperature T-TSD 11.8 V 0.3 Design target value* 23 mV 170 °C *: T-TSD is not measured because it stands for design target. Package Dimensions unit : mm (typ) 3315 1 12 0.8 0.15 0.3 1.5MAX (1.3) (0.48) Allowable Power Dissipation,Pd max - W 0.5 5.6 13 7.6 24 Pd max - Ta 0.6 9.75 Independent IC 0.5 0.4 0.2 0.1 0 -30 0.1 0.30 0.3 -10 10 30 50 Ambient Temperature, Ta- °C 70 90 ILB01791 SANYO : SSOP24J(275mil) No.A0377-2/7 LB11988V Truth Table and Control Function Hall Input Source → Sink 1 2 3 4 5 6 V→W W→V U→W W→U U→V V→U W→V V→W W→U U→W V→U U→V FR U V W H H L H L H L L H L H L H H L L L H H L L H H H L L H L Note: “H” in the FR column represents a voltage of 8V or more. “L” represents a voltage of 4V or less. (At VCC=12V) Note: “H” under the Hall Input columns represents a state in which “+” has a potential which is higher by 0.01V or more than that of the “-“ phase inputs. Conversely “L” represents a state in which “+” has a potential which is lower by 0.01V or more than that of the “-” phase inputs. Note: Since a 180° energized system is used as a drive system, other phases than the sink and source are not OFF. H L Pin Assignment 1 WOUT VOUT 24 2 NC UOUT 23 3 NC NC 22 4 FGOUT NC 21 5 FR 6 GND 7 NC 8 NC 9 FC LB11988V RF 20 (PWR) VS 19 VCC 18 NC 17 WIN- 16 10 UIN+ WIN+ 15 11 UIN- VIN- 14 12 VIN+ NC 13 Top view No.A0377-3/7 LB11988V Pin Functions Pin Name GND Pin Pin Functions No. 6 Input/Output Equivalent Circuit GND for others than the output transistor. Minimum potential of output transistor is at RF pin. UIN+, UIN- 10,11 U-phase Hall device input pin; Each (-) input Each (+) input logic “H” presents IN+>IN- 11 10 WIN+,WIN- 12,14 15,16 V-phase Hall device input pin; 12 logic “H” presents IN+>IN- 15 14 200Ω 200Ω 100µA VIN+, VIN- W-phase Hall device input pin; 16 logic “H” presents IN+>IN23 U-phase output pin. 24 V-phase output pin. WOUT 1 W-phase output pin. RF 20 (Built-in spark killer diode) 19 VS Output current detection pin. Connecting Rf between this pin and GND Each OUT activates current limiting circuit. Then the 23 24 1 lower over-saturation prevention circuit is Lower oversaturation prevention circuit block activated in accordance with this pin 30kΩ voltage. Since the over-saturation prevention level is set with this voltage, the lower over-saturation prevention effect may deteriorate in the high current range VCC 150µA UOUT VOUT 200Ω 20 RF if the Rf value is reduced to an extremely low level. VS 19 Power supply pin for supplying power to output section in IC. FR 5 Forward/Reverse switching pin. 200µA VCC 200Ω 1/2VCC FR 5 9 Frequency characteristics compensation VCC pin for over-saturation prevention circuit loop. 10kΩ FC 9 FC Continued on next page. No.A0377-4/7 LB11988V Continued from preceding page. Pin Name VCC Pin No. 18 Pin Functions Input/Output Equivalent Circuit Power supply pin for supplying power to all circuits expect output section in IC; this voltage must be stabilized so as to eliminate ripple and noise. FG amplifier output pin. Resistive load provided internally. VCC VCC 5kΩ 3 10kΩ FGOUT 3 FGOUT No.A0377-5/7 VCC 18 FR 5 16 WIN- WIN+ 15 14 VIN- VIN+ 12 11 UIN- UIN+ 10 VCC Reference voltage Bandgap 1.2V Forward/Reverse switching Hall input combination unit (linear matrix) distribution Differential 9 TSD Current limitter LIMREF Combined output logarithmic compression unit FC GND 6 Feedback amplifier Logarithmic inverse transformation & differential distribution 0.1µF UIN- UIN+ 13.6kΩ 30kΩ FG amplifier Schmidt amplifier Drive distribution circuit & lower saturation prevention control Upper saturation prevention control 20 1 24 23 3 FGOUT 5kΩ VCC WOUT VOUT UOUT 19 RF VS 0.5Ω 0.1µF×3 LB11988V Block Diagram No.A0377-6/7 LB11988V Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.A0377-7/7