2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V 310 195 1.2 mA mA A ID Maximum Drain Current TJ Operating Junction Temperature Range -55 to +150 °C Storage Temperature Range -55 to +150 °C TSTG - Continuous TJ = 100°C - Pulsed * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RθJA Value Units Total Device Dissipation Derating above TA = 25°C Parameter 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient * 410 °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 www.fairchildsemi.com 1 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10μA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C IGSS Gate-Body Leakage 60 VGS = ±20V, VDS = 0V V 1.0 0.5 μA mA ±10 μA 2.1 V On Characteristics (Note1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 1.1 RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA, TJ = 100°C VGS = 5V, ID = 50mA VGS = 5V, ID = 50mA, TJ = 100°C 1.6 2.4 2 3 Ω Ω Ω Ω VDS(ON) Drain-Source On-Voltage VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA 3.75 1.5 V V ID(ON) gFS On-State Drain Current VGS = 10V, VDS = 2V 500 mA Forward Transconductance VDS = 2V, ID = 0.2A 80 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 50 pF 25 pF 5 pF 20 60 ns ns Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30V, RL = 150Ω, VGS= 10V, ID = 200mA, RGEN = 25Ω Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current 115 mA ISM IS Maximum Pulsed Drain-Source Diode Forward Current 0.8 A VSD Drain-Source Diode Forward Voltage 1.1 V VGS = 0V, IS = 115mA Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 www.fairchildsemi.com 2 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Temperature. 2.2 2.4 2.1 RDS(on) (Ω) Normalized Drain-Source On-Resistance ID. Drain-Source Current (A) VGS = 10V 9V 8V 6V 1.8 7V 1.5 5V 1.2 0.9 4V 0.6 0.3 VGS = 3V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 1.8 VGS = 10V 1.6 ID = 500mA 1.4 VGS = 5V 1.2 ID = 50mA 1.0 0.8 0.6 0.4 -50 4.5 0 VDS. Drain-Source Voltage (V) 100 150 o Figure 3. On-Resistance Variation with Gate Voltage and Drain Current. Figure 4. On-Resistance Variation with Drain Current and Temperature. 3.0 5 VGS = 10V VGS = 4V 4.5V 2.5 RDS(on) Drain-Source On-Resistance VGS = 7V 5V (Ω) RDS(on), (Ω) Drain-Source On-Resistance 50 TJ. Junction Temperature ( C) 2.0 6V 1.5 8V 1.0 10V 9V 4 3 o TA = 125 C 2 o TA = 25 C 1 o TA = -55 C 0.5 0.0 0.5 1.0 1.5 0 0.0 2.0 0.5 ID. Drain-Source Current(A) 3.5 ID. Drain-Source Current (A) o TA = -55( C) 3.0 o TA = 25( C) 2.5 2.0 o TA = 125( C) 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 2.0 1.10 VDS = VGS 1.05 1.00 ID = 1mA 0.95 ID = 0.25mA 0.90 0.85 0.80 0.75 -25 0 25 50 75 100 125 o VGS. Gate-Source Voltage (V) TJ. Junction Temperature ( C) © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 1.5 Figure 6. Gate Threshold Variation with Temperature. Vth. Normalized Gate-Source Threshold Voltage (V) Figure 5. Transfer Characteristics VDS = 10V 1.0 ID. Drain Current (A) www.fairchildsemi.com 3 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. 10000 VGS = 0 V ID=250uA 1.075 IS. Reverse Drain Current [mA] BVdss , Normalized Drain Source Breakdown Voltage 1.100 1.050 1.025 1.000 0.975 0.950 0.925 -25 0 25 50 75 100 1000 100 o TA=125 C 10 o TA=25 C 1 o TA=-55 C 0.1 0.0 125 0.2 o 0.4 Figure 9. Capacitance Characteristics. 0.8 1.0 1.2 Figure 10. Gate Charge Characteristics. 100 10 VGS. Gate-Source Voltage (V) CISS, COSS, CRSS. Capacitance (pF) VDS = 25V CISS 10 COSS 8 6 2 ID = 115mA 1 1 10 ID = 500mA 4 CRSS f = 1MHZ VGS = 0V 0 0.0 100 0.2 0.4 0 10 100μs 1ms 10ms 100ms 1S -1 DC RDS(on) Limit -2 10 Vgs=10V Single Pulse o Rthja=410 C/W o Ta = 25 C -3 10 -4 10 -1 10 0 10 1 10 0.8 1.0 1 50% Rthja(t)=r(t)*Rthja o Rthja=410 C/W 20% 0.1 10% 5% 2% D=1% Single Pulse 0.01 1E-4 2 10 1E-3 0.01 0.1 1 10 100 1000 t1, time(sec) VDS, Drain-Source Voltage [V] © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 0.6 Figure 12. Transient Thermal Response Curve. r(t), Normalized Transient Thermal Resistance Figure 11. Maximum Safe Operating Area. 10 ID = 280mA Qg. Gate Charge (nC) VDS. Drain to Source Voltage (V) ID, Drain Current [A] 0.6 VSD. Body Diode Forward Voltage [V] TJ, Junction Temperatture( C) www.fairchildsemi.com 4 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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