MBR1035 - MBR1060 Schottky Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. PIIN1 • Metal silicon junction, majority carrier conduction PIIN2 Case • High current capacity, low forward voltage drop • Guard ring for over voltage protection. 1 2 TO-220AC Absolute Maximum Ratings* Symbol Ta = 25°C unless otherwise noted Value Parameter 1035 1045 35 45 1050 1060 50 60 Units VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current 10 A V IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 150 A Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD Parameter Value Units Power Dissipation 2.0 W RθJA Thermal Resistance, Junction to Ambient 60 °C/W RθJL Thermal Resistance, Junction to Lead 2.0 °C/W Electrical Characteritics Symbol Ta = 25°C unless otherwise noted Value Parameter VF Forward Voltage IR Reverse Current @ rated VR TC = 25°C TC = 125°C IRRM Peak Repetitive Reverse Surge Current 2.0μs Pulse Width, f = 1.0 KHz 1035 1050 0.57 0.84 0.72 IF = 10A, TC = 25°C IF = 10A, TC = 125°C IF = 20A, TC = 25°C IF = 20A, TC = 125°C 1060 0.80 0.70 0.95 0.85 0.1 15 1.0 © 2012 Fairchild Semiconductor Corporation MBR1035 - MBR1060 Rev. D0 1045 Units V V V V mA mA 0.5 A www.fairchildsemi.com 1 MBR1035 - MBR1060 — Schottky Rectifiers June 2012 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] 12 10 MBR1035-MBR1045 8 MBR1050-MBR1060 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 6 4 2 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 Figure 1. Forward Current Derating Curve 125 100 75 50 25 0.1 20 10 TA = 25º C 10 Reverse Current, IR [mA] Forward Current, IF [A] 150 1 10 Number of Cycles at 60Hz MBR1035-MBR1045 1 MBR1050-MBR1060 0.1 MBR1035-MBR1045 T A = 125 º C 1 MBR1050-MBR1060 TA = 75º C 0.1 MBR1035-MBR1045 0.01 TA = 25º C μS Pulse Width = 300μ 2% Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] MBR1050-MBR1060 1 0.001 1.2 Figure 3. Forward Voltage Characteristics Transient Thermal Impedance [ºC/W]º Total Capacitance, CT [pF] 20 40 60 80 100 120 Percent of Rated Peak Reverse Voltage [%] 100 2000 1000 MBR1035-MBR1045 500 MBR1050-MBR1060 200 1 10 Reverse Voltage, VR [V] 100 Figure 5. Total Capacitance 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics © 2012 Fairchild Semiconductor Corporation MBR1035 - MBR1060 Rev. D0 0 Figure 4. Reverse Current vs Reverse Voltage 5000 100 0.1 100 Figure 2. Non-Repetitive Surge Current 50 T A = 150 ºC 175 www.fairchildsemi.com 2 MBR1035 - MBR1060 — Schottky Rectifiers Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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