FDB8443_F085 ® N-Channel PowerTrench MOSFET 40V, 80A, 3.0mΩ Features Applications Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q101 Distributed Power Architecture and VRMs RoHS Compliant Primary Switch for 12V Systems ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 1 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET Sep 2011 Symbol Drain to Source Voltage VDSS VGS Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 146oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) ID 25 Pulsed EAS Single Pulse Avalanche Energy PD A See Figure 4 (Note 1) 531 mJ Power Dissipation 188 W Derate above 25oC 1.25 W/oC -55 to +175 oC 0.8 oC/W 62 o C/W 43 o C/W TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) 2 Thermal Resistance Junction to Ambient TO-263, 1in copper pad area RθJA Package Marking and Ordering Information Device Marking Device Package FDB8443 FDB8443_F085 TO-263AB Reel Size Tape Width Quantity 24mm 800 units 330mm Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.8 4 V ID = 80A, VGS= 10V - 2.3 3.0 ID = 80A, VGS= 10V, TJ = 175oC - 4.2 5.5 VDS = 25V, VGS = 0V, f = 1MHz - 9310 - pF - 800 - pF pF Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 510 - RG Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 142 185 nC VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 2 VDD = 20V ID = 35A Ig = 1mA - 17.5 23 nC - 36 - nC - 18.8 - nC - 32 - nC www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (VGS = 10V) ton Turn-On Time - - 58 ns td(on) Turn-On Delay Time - 18.4 - ns tr Rise Time - 17.9 - ns td(off) Turn-Off Delay Time - 55 - ns tf Fall Time - 13.5 - ns toff Turn-Off Time - - 109 ns ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 35A, dISD/dt = 100A/μs V - 42 55 ns - 48 62 nC Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 3 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 200 1.0 160 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 VGS = 10V 120 80 40 0 25 175 CURRENT LIMITED BY PACKGAE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) 1000 CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 4 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench ® MOSFET Typical Characteristics 500 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10us 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 SINGLE PULSE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 10ms TJ = MAX RATED o TC = 25 C STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 200 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 4.0 4.5 160 VGS = 5V VGS = 4.5V 120 80 40 0 5.0 VGS = 4V 0 VGS, GATE TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 60 TJ = 25oC o 40 TJ = 175 C 20 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench ® MOSFET Typical Characteristics 1.15 VGS = VDS ID = 250μA 1.10 1.0 1.05 0.8 1.00 0.6 0.4 -80 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 20000 Ciss 10000 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 10 ID = 35A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 80 100 120 Qg, GATE CHARGE(nC) 140 160 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.C1 7 www.fairchildsemi.com FDB8443_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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