SANYO LV4924VH

Ordering number: ENA1997
Bi-CMOS IC
LV4924VH
Class-D Audio power Amplifier
Power cell BTL 10W×2ch
Overview
The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the
previous stage. This IC is a power cell that takes in PWM signals as an input and is used to form a digital amplifier system
for TVs, amusement equipment, and other such systems.
Features
• BTL output, class D amplifier system
• High-efficiency class D amplifier
• Muting function reduces impulse noise at power on / off
• Protection circuits incorporated for over-current, thermal, supply voltage drop, output offset detector
• Built-in bootstrap diodes
Specification
•
•
•
•
Output 15W (VD=16V, RL=8Ω, fIN=1kHz, AES17, THD+N=10%)
Output 10W (VD=13V, RL=8Ω, fIN=1kHz, AES17, THD+N=10%)
Efficiency
: 89% (VD=13V, RL=8Ω, fIN=1kHz, PO=10W)
THD+N
: 0.1% (VD=13V, RL=8Ω, fIN=1kHz, PO=1W, Filter: AES17)
Maximum Ratings / Absolute Maximum Ratings /Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VD
Externally applied voltage
22
V
Maximum PWM pin voltage
VIN
PWM_A1,PWM_A2,PWM_B1,PWM_B2
Maximum pull-up pin voltage
Vpup max
NPN Open collector pin
20
6
V
V
Allowable power dissipation
Pd max
Exposed Die-pad Soldered *1
4.6
W
Maximum junction temperature
Tj max
150
°C
Operating temperature
Topr
-25 to 75
°C
Storage temperature
Tstg
-50 to 150
°C
*1 Customer bread board rev.1.0: 90.0mm × 70.0 mm × 1.6 mm (two-layer) Material: glass epoxy
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
N1611 SY 20111031-S00002 No.A1997-1/15
LV4924VH
Recommended Operating Range at Ta = 25°C
Parameter
Symbol
Recommended supply voltage
Ratings
Conditions
min
typ
Unit
max
VD
Externally applied voltage
9
13
20
V
Recommended PWM pin voltage
VIN
PWM_A1,PWM_A2,PWM_B1,PWM_B2
0
Recommended pull-up supply
Vpup
NPN Open collector pin
-
3.3
5
V
-
18
V
RL
Speaker load
4
8
-
Ω
range
voltage
Recommended load resistance
Electrical Characteristics Ta=25°C, VD=13V, RL=8Ω, L=22μH (TOKO: A7040HN-220M), C=0.33μF (Matsuo: 553M6302-334K)
Parameter
Symbol
Ratings
Conditions
min
Quiescent current
ICCO
STBY=H, MUTE=H, fIN=384kHz, Duty=50%
Current at MUTE
Imute
STBY=H, MUTE=L, VIN=GND
Standby current
Ist
STBY=L, MUTE=L, VIN=GND
H input voltage
VIH
PWM_A, PWM_B, STBY, MUTE
L input voltage
VI L
PWM_A, PWM_B, STBY, MUTE
H input current
I IH
VIN=5V
L input current
IIL
Output pin leakage current
IOFF
VIN=GND
NPN Open collector output
Output pin current
IOL
Power Tr ON resistance
*1
Rds ON
typ
30
38
45
mA
2
4
6
mA
-
10
μA
2.3
-
5.5
V
0
-
1.0
V
60
μA
-20
-
-
-
-
-
OFF-stage 5.0V pull-up
Unit
max
-
μA
-
NPN Open collector output
0.5
ON-stage, VOL=0.4V
1
-
Id=1A
-
220
μA
-
mA
-
mΩ
Turn ON delay time
td ON
fIN=384kHz, Duty=50%
-
30
50
Turn OFF delay time
td OFF
fIN=384kHz, Duty=50%
-
30
50
ns
Rise-up time
tr
fIN=384kHz, Duty=50%
-
5
20
ns
-
5
20
ns
Fall time
tf
fIN=384kHz, Duty=50%
*1 : The maximum power transistor ON resistance(RDSON) is 270mΩ(design guarantee value).
ns
Note : The value of these characteristics were measured in SANYO test environment. The actual value in an end system will vary depending on the printed
circuit board pattern, the components used, and other factors.
Electrical Characteristics
(Reference value: The table below shows the reference value when FPGA equivalent to the Sanyo reference model is used.)
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Output 1
PO1
THD+N=10%, fIN=1kHz, AES17
-
10
-
W
Output 2
PO2
VD=16V, THD+N=10%, fIN=1kHz, AES17
-
15
-
W
Total harmonic distortion
THD+N
PO=1W, fIN =1kHz, AES17
0.1
%
Note : The value of these characteristics were measured in SANYO test environment. The actual value in an end system will vary depending on the printed
circuit board pattern, the components used, and other factors.
Audio data
IIS
PWM BD-mode
MCLK
MCLK
BCLK
BCLK
LRCLK
SDATA
FPGA
LRCLK
LV4924VH
SDATA
No.A1997-2/15
LV4924VH
Package Dimensions
unit : mm (typ)
3417
BOTTOM VIEW
TOP VIEW
15.0
36
0.5
(3.5)
5.6
7.6
(4.7)
12
1.625
0.22
0.2
0.65
(1.5)
SIDE VIEW
0.05
2.17
1.7 MAX
(0.68)
SANYO : HSSOP36(275mil)
OUT_CH2_P
OUT_CH2_P
PVD2
PVD2
27
26
25
24
23
19
20
21
22
10
11
12
13
14
15
16
17
18
NC8
NC9
NC10
NC11
GND
BOOT_CH2_P
28
NC7
OUT_CH1_N
29
VDDA2
OUT_CH1_N
30
NC6
BOOT_CH1_N
31
BOOT_CH2_N
VDDA1
32
NC5
BOOT_CH1_P
33
OUT_CH2_N
OUT_CH1_P
34
PWM_A2
OUT_CH1_P
35
OUT_CH2_N
PVD1
36
PWM_B2
PVD1
Pin Assignment
1
2
3
4
5
6
7
8
9
STBY
MUTE
SOS
NC1
NC2
NC3
NC4
PWM_A1
PWM_B1
LV4924VH
GND
Top view
No.A1997-3/15
LV4924VH
Reference data for thermal design
Overall view of substrate
Mounted on a specified board (Customer bread board rev.1.0): 90.0mm × 70.0 mm × 1.6 mm (two-layer) Material: glass epoxy
Pd max-Ta
Allowable power dissipation, Pd max -- W
6
5
4.6
4
3.2
3
Pd max -- Ta
Specified board : 90.0 × 70.0 × 1.6mm3
glass epoxy
Exposed Die-Pad
Soldered
Exposed Die-Pad
Not Soldered
2.7
2
1.9
1
0
--25
0
25
50
75
100
Ambient temperature, Ta -- C
1. Data of the Exposed Die-Pad (heat spreader) substrate as mounted represents the value in the state where the exposed
Die-Pad surface is wet for 90% or more.
2. For the set design, derating design should be made while ensuring allowance.
Stresses to become an object of derating are the voltage, current, junction temperature, power loss and mechanical
stresses including vibration, impact and tension.
Accordingly, these stresses must be as low or small as possible in the design.
Approximate targets for general derating are as follows:
(1) Maximum value 80% or less for the voltage rating.
(2) Maximum value 80% or less for the current rating.
(3) Maximum value 80% or less for the temperature rating.
3. After set design, be sure to verify the design with the product.
Also check the soldered state of the Exposed Die-Pad, etc. and verify the reliability of the soldered joint.
If any void or deterioration is observed in these sections, thermal conduction to the substrate is deteriorated, resulting in
thermal damage of IC.
No.A1997-4/15
LV4924VH
GND
GND
Block Diagram
Pin Equivalent Circuit
Pin No.
1
Pin name
STBY
I/O
I
Description
Equivalent Circuit
Standby mode control
PVD
1
GND
2
MUTE
I
Muting control
PVD
VDDA
2
GND
Continued on next page.
No.A1997-5/15
LV4924VH
Continued from preceding page.
Pin No.
3
Pin name
SOS
I/O
Description
I
Internal protection circuit detection output (OR output of the
Equivalent Circuit
PVD
thermal detection, over-current, voltage drop protection,
offset detection circuit) of an NPN open collector output type
3
GND
4
NC1
-
Non connection
5
NC2
-
Non connection
6
NC3
-
Non connection
7
NC4
-
Non connection
8
PWM_A1
I
PWM input (plus input) of OUT_CH1_P
9
PWM_B1
I
PWM input (negative input) of OUT_CH1_N
10
PWM_B2
I
PWM input (negative input) of OUT_CH2_N
11
PWM_A2
I
PWM input (plus input) of OUT_CH2_P
VDDA
PVD
GND
FIN
GND
-
ground
12
NC5
-
Non connection
13
NC6
-
Non connection
14
NC7
-
Non connection
15
NC8
-
Non connection
16
NC9
-
Non connection
17
NC10
-
Non connection
18
NC11
-
Non connection
19, 20
PVD2
-
Power pin
21, 22
OUT_CH2_P
O
Output pin, Channel 2 plus
26, 27
OUT_CH2_N
O
Output pin, Channel 2 minus
28, 29
OUT_CH1_N
O
Output pin, Channel 1 minus
33, 34
OUT_CH1_P
O
Output pin, Channel 1 plus
PVD
GND
23
BOOT_CH2_P
I/O
Bootstrap I / O pin, channel 2 plus
24
VDDA2
O
Internal power supply decoupling capacitor connection
25
BOOT_CH2_N
I/O
Bootstrap I / O pin, channel 2 minus
30
BOOT_CH1_N
I/O
Bootstrap I / O pin, channel 1 minus
31
VDDA1
O
Internal power supply decoupling capacitor connection
BOOT_CH1_P
I/O
32
35, 36
PVD1
-
Bootstrap I / O pin, channel 1 plus
Power pin
No.A1997-6/15
LV4924VH
Description of functions
System Standby
The built-in 5V regulator is turned ON / OFF by changing over "H" and "L" of "STBY". The regulator is turned OFF
with "STBY" at "L" and ON with "STBY" at "H".
This signal also causes initialization of the internal logic initialization with "L" and the normal mode with "H".
MUTE Function
The MUTE function is mainly for muting of the output and for reduction of pop noise at power ON.
Muting the output
The output PWM can be turned ON / OFF by changing over "H" and "L" of "MUTE". The PWM output is stopped
(putting all of PWM outputs at high impedance) with "MUTE" at "L" and enters the normal operation mode with
"MUTE" at "H".
Sequence at power ON
To reduce the pop noise, turn ON power supply while controlling in the following timing (PWM=BD mode).
In particular, all of inputs of PWM must be held at "L" at canceling of MUTE function.
* Please observe the following items for the destruction prevention of the output transistor.
(1) Under all conditions must control the period at the "H" level about the PWM input so as not to become more than
200μs when period of the "H" level MUTE and STBY signals both.
No.A1997-7/15
LV4924VH
Sequence at power OFF
To reduce the pop noise, turn OFF power supply while controlling in the following timing (PWM=BD mode).
Protection Circuit
LV4924VH incorporates the over-current protection circuit, thermal protection circuit, supply voltage drop protection
circuit and output offset detection protection circuit. Activation of any one of these circuits causes the SOS output pin
to become active and thus "L".
Over-current protection circuit
This circuit is a protection circuit* to protect the output transistor from the over-current and compatible with any mode
of lightning, ground fault, and load short-circuit.
Protection is done when the detection current value (about 6A) set inside IC is reached, forcing the output transistor to
remain OFF for about 20μs. After forced OFF, the transistor returns automatically to the normal operation and performs
protection again if the over-current continues to flow.
Output Current
Control
Operation
Self-recovery &
Normal Operation
Internal Control Signal
* The over-current protection circuit functions only to avoid the abnormal state, such as output short-circuit, etc.,
temporarily, and does not guarantee to offer the protection to prevent damage to IC.
No.A1997-8/15
LV4924VH
Thermal protection circuit
This circuit detects the temperature (150°C or more) inside LSI for protection. While this protection circuit is active,
the output Tr is turned OFF on both high- and low-sides, putting the output in the high-impedance state. This operation
is also provided with the hysteresis.
Supply voltage drop protection circuit
To avoid unstable operation at low voltages, this circuit monitors the PVD pin voltage and turns ON the amplifier when
this voltage exceeds the Attack voltage (VD = 7V typ.). In addition, to avoid unstable operation when the PVD pin
voltage has dropped because of certain reasons, the Recover voltage (VD = 6V typ.) is set. Both Attack and Recover
voltages have the hysteresis (about 1V) to prevent continuous ON / OFF operation of the supply voltage drop
protection circuit.
PVD Pin Voltage
Recovery Voltage
Internal
Control
Signal
Output offset detection protection circuit
This circuit is a protection circuit intended to alleviate burn of the loudspeakers when DC outputs to the BTL output for
a certain period or more.
The circuit detects the case in which each BTL input of each channel continues to disagree (for about 300ms), turns
OFF the output Tr on both high- and low-sides, and puts the output in the high-impedance state.
No.A1997-9/15
LV4924VH
GND
GND
Application Circuit
* SOS of pin 3 is the open collector output.
Therefore, to monitor this output with CPU, it is necessary to pull up (resistor: R1) at power supply of CPU, etc.
When the output is not to be used (not to be monitored), it is not necessary to pull-up the resistor.
No.A1997-10/15
LV4924VH
Characteristics Data: L=22μH (TOKO: A7040HN-220M), C=0.33μF (Matsuo: 553M6302-334K)
Ist -- VD
0.3
Ipd -- Ta
0.3
Standby current, Ist - A
Standby current, Ist - A
V D =13V, RL=8
IN=Low, STBYB=Low
MUTEB=Low
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
22
0.2
0.1
0
-40
24
-20
Supply voltage, VD - V
IMUTE -- VD
8
Muting current, Imute - mA
Muting current, Imute - mA
5
4
3
2
60
80
100
120
100
120
100
120
100
120
6
5
4
3
2
1
1
4
6
8
10
12
14
16
18
20
0
-40
22
-20
Supply voltage, VD - V
70
RL=8
IN=Duty50%[0 to 3.3V]
STBYB=High, MUTEB=High
60
Quiescent current, Icco - mA
60
50
40
30
20
10
0
4
6
8
10
12
14
16
20
40
60
80
18
20
Icco -- Ta
VD=13V, RL=8
IN=Duty50%[0 to 3.3V]
STBYB=High, MUTEB=High
50
40
30
20
10
0
-40
22
-20
Supply voltage, VD - V
0
20
40
60
80
Ambient temperature, Ta - C
VDD1,2 -- VD
6
0
Ambient temperature, Ta - C
Icco -- VD
70
Quiescent current, Icco - mA
40
V D =13V, RL=8
IN=0, STBYB=High
MUTEB=Low
7
6
0
20
IMUTE -- Ta
8
RL=8 , IN=Low
STBYB=High, MUTEB=Low
7
0
Ambient temperature, Ta - C
VDD1,2 -- Ta
6
5
5
4
4
VDDA1,2[V]
VDDA1,2[V]
RL=8
3
3
2
2
1
1
0
4
6
8
10
12
14
16
Supply voltage, VD - V
18
20
22
0
-40
VD=13V
RL=8
-20
0
20
40
60
80
Ambient temperature, Ta - C
No.A1997-11/15
LV4924VH
td ON -- VD
50
50
40
30
20
10
0
8
10
12
14
16
td ON -- Ta
60
Turn ON delay time, td ON - nsec
Turn ON delay time, td ON - nsec
60
18
20
40
30
20
10
0
-40
22
VD=13V
RL=8
-20
Supply voltage, VD - V
td OFF -- VD
60
50
Turn OFF delay time, td OFF - nsec
Turn OFF delay time, td OFF - nsec
60
40
30
20
10
0
8
10
12
14
16
18
20
40
60
80
100
120
20
50
80
100
120
100
120
100
120
VD=13V
RL=8
40
30
20
10
0
-40
22
td OFF -- Ta
-20
Supply voltage, VD - V
0
20
40
60
Ambient temperature, Ta - C
tr -- VD
30
0
Ambient temperature, Ta - C
tr -- Ta
30
Rise-up time, tr - nsec
Rise-up time, tr - nsec
VD=13V
RL=8
20
10
0
8
10
12
14
16
18
20
20
10
0
-40
22
-20
Supply voltage, VD - V
tf -- VD
30
0
20
40
60
80
Ambient temperature, Ta - C
CH sep. -- Ta
30
20
Full time, tr - nsec
Full time, tr - nsec
VD=13V
RL=8
10
0
8
10
12
14
16
18
Supply voltage, VD - V
20
22
20
10
0
-40
-20
0
20
40
60
80
Ambient temperature, Ta - C
No.A1997-12/15
LV4924VH
Efficiency -- Power
100
Pd - Power
4
80
60
Pd - W
Efficiency - %
3
2
40
1
20
0
0
2
4
6
8
0
10
0
2
60
3
Pd - W
Efficiency - %
4
40
0
3
6
9
12
0
15
0
3
fIN=1kHz
THD+N=1%
2CH-Drive
AES17
24
32
28
RL=6
Power@THD+N=1% - W
Power@THD+N=1% - W
28
RL=4
20
16
RL=8
12
9
6
Power - W/ch
Power@THD+N+1% -- VD
32
8
4
24
Power@THD+N+1% -- Ta
VD=13V
fIN=1kHz
THD+N=1%
2CH-Drive
AES17
20
16
RL=4
12
RL=6
8
RL=8
4
8
10
12
14
18
16
20
0
-40
22
-20
Supply voltage, VD - V
fIN=1kHz
THD+N=10%
2CH-Drive
AES17
36
44
40
36
RL=6
32
28
Power@THD+N=10% - W
40
RL=4
24
20
RL=8
16
12
32
16
Supply voltage, VD - V
80
100
120
18
20
22
100
120
Power@THD+N+10% -- Ta
VD=13V
fIN=1kHz
THD+N=10%
2CH-Drive
AES17
RL=4
16
RL=6
12
4
14
60
20
4
12
40
24
8
10
20
28
8
8
0
Ambient temperature, Ta - C
Power@THD+N+10% -- VD
44
Power@THD+N=10% - W
15
1
Power - W/ch
0
12
2
20
0
10
Pd - Power
5
80
0
8
Power - W/ch
Efficiency -- Power
100
6
4
Power - W/ch
0
-40
RL=8
-20
0
20
40
60
80
Ambient temperature, Ta - C
No.A1997-13/15
LV4924VH
10
THD+N -- Frequency
VD=13V
RL=8
PO=1W
2CH-Drive
AES17
1
CH1
0.1
CH2
0.01
10
100
1000
THD+N -- Ta
100
Total harmonic distortion, THD+N -- %
Total harmonic distortion, THD+N -- %
100
100000
10000
10
VD=13V
RL=8
fIN=1kHz
PO=1W
2CH-Drive
AES17
1
CH1
0.1
CH2
0.01
-40
-20
10
THD+N -- Frequency
VD=16V
RL=8
PO=1W
2CH-Drive
AES17
1
CH1
0.1
CH2
0.01
10
100
1000
10
Total harmonic distortion, THD+N -- %
Total harmonic distortion, THD+N -- %
1
fIN=100Hz
fIN=1kHz
0.1
fIN=6.67kHz
0.1
Power - W
120
100
120
CH1
CH2
0.1
100
10
0.01
100
-20
1
0
20
40
80
60
Ambient temperature, Ta - C
VD=13V
RL=8
2CH-Drive
AES17
0.001
80
60
1
0.01
-40
100000
10000
THD+N -- Power
0.01
0.0001
40
VD=16V
RL=8
fIN=1kHz
PO=1W
2CH-Drive
AES17
Frequency - Hz
100
20
THD+N -- Ta
100
Total harmonic distortion, THD+N -- %
Total harmonic distortion, THD+N -- %
100
0
Ambient temperature, Ta - C
Frequency - Hz
10
100
THD+N -- Power
VD=16V
RL=8
2CH-Drive
AES17
10
1
fIN=100Hz
fIN=1kHz
0.1
fIN=6.67kHz
0.01
0.0001
0.001
0.01
0.1
1
10
100
Power - W
No.A1997-14/15
LV4924VH
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2011. Specifications and information herein are subject
to change without notice.
PS No.A1997-15/15