SANYO LV8014T

Ordering number : ENA1134
Bi-CMOS LSI
LV8014T
Forward/Reverse Motor Driver
Overview
LV8014T is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports
the PWM input. Its features are that the on resistance (0.75Ω typ) and current dissipation are low.
It also provides protection functions such as heat protection circuit and reduced voltage detection and is optimal for the
motors that need high-current.
Functions
• 2ch forward/reverse motor driver
• Possible to respond to 3V control voltage and 6V motor voltage device
• Low power consumption
• Low-temperature resistance 1.2Ω
• Built-in charge pump circuit
• Built-in low voltage reset and thermal shutdown circuit
• Four mode function forward/reverse, brake, stop.
• Compact TSSOP-24 package
Specifications
Absolute Maximum Ratings at Ta = 25°C, SGND = PGND = 0V
Parameter
Symbol
Supply voltage (For load)
Supply voltage (For control)
Conditions
Unit
-0.5 to 7.5
VCC max
-0.5 to 6.0
V
1.4
A
2.5
A
IO max
t ≤ 100ms
Output peak current
IO max2
t ≤ 10ms
Input voltage
VIN max
Allowable dissipation
Pd max
Output current
Ratings
VM1, 2 max
-0.5 to VCC+0.5
* Mounted on a substrate
800
V
V
mW
Operating temperature
Topr
-20 to +75
°C
Storage temperature
Tstg
-55 to +150
°C
* : Mounted on a substrate :
30×50×1.6mm3,
glass epoxy board
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
31208 TI IM B8-9014 No. A1134-1/6
LV8014T
Allowable Operating Ratings at Ta = 25°C, SGND = PGND = 0V
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage (VM Pin)
VM
2.0 to 7.0
V
Supply voltage (VCC Pin)
VCC
2.7 to 5.5
V
Input signal voltage
VIN
0 to VCC
V
Input signal frequenc
Capacitor for charge pump
f max
C1, C2, C3
100
kHz
0.001 to 0.1
μF
Electrical Characteristics at Ta = 25°C, VCC = VM1 = VM2 = 5.0V, SGND = PGND = 0V, unless especially specified.
Parameter
Symbol
Conditions
Ratings
Remarks
min
typ
Unit
max
Supply current for load at standby
IMO
EN = 0V
1
1.0
μA
Supply current for control at
ICO
EN = 0V,
2
1.0
μA
1.2
mA
standby
IN1 = IN2 = IN3 = IN4 = 0V
Current drain during operation
IC1
EN = 5V, VG at no load
H-level input voltage
VIH
2.7V ≤ VCC ≤ 5.5V
3
L-level input voltage
VIL
2.7V ≤ VCC ≤ 5.5V
H-level input current
IIH
4
IIL
4
0.7
0.6×VCC
VCC
V
0
0.2×VCC
V
1.0
μA
(IN1, IN2, IN3, IN4)
L-level input current
μA
-1.0
(IN1, IN2, IN3, IN4)
Pull-down resistance (EN1, 2)
RUP
100
200
400
kΩ
Ta = 25°C, VCC = VM = 5.0V, SGND = PGND = 0V
Parameter
Symbol
Conditions
Ratings
Remarks
min
Output ON resistance
RON
Sum of ON resistances at top and
typ
5
Unit
max
Ω
0.75
1.2
10.5
V
2.30
2.45
V
bottom
Charge pump voltage
Low-voltage detection operation
VG
6
8.5
VCS
7
2.15
Tth
8
VGLOAD
9
voltage
Thermal shutdown operation
180
°C
9
V
temperature
Charge pump capacity
8
(IG = 500μA)
IG current dissipation (Fin = 20kHz)
IG
CVG = 0.1μF
10
350
μA
11
1.0
ms
Charge pump start time
TVG
Output block
Turn on time
TPLH
12
0.2
0.4
μs
Turn off time
TPHL
12
0.2
0.4
μs
Remarks
1. It shows current dissipation of VM1, VM2 pin in output OFF state.
2. It shows current dissipation of VCC pin in stand-by state.
(The standard current depends on EN pin pull-down resistance.)
3. It shows current dissipation of VCC pin in state of EN = 5V (stand-by), including current dissipation of VG pin.
4. For IN1, IN2, IN3 and IN4 pins, no pull-down and pull-up resistance is needed. (High impedance pin)
5. It shows sum of upper and lower saturation voltages of OUT pin.
6. It controls charge-pump oscillation and makes specified voltage.
7. When low voltage is detected, the lower output is turned OFF.
8. When thermal protection circuit is activated, the lower output is turned OFF.
When the heat temperature is fallen, it is turned ON again.
9. IG (VG pin load current) = 500μA
10. It shows VG pin current dissipation in state of PWM input for IN pin.
11. It specifies start-up time from 10% to 90% when VG is in non-load state
(when setting the capacitor between VG and GND to 0.1μF and VCC is 5V).
12. It specifies 10% to 90% for start-up and 90% to 10% for shut-down.
No. A1134-2/6
LV8014T
Package Dimensions
unit : mm (typ)
3260A
Pd max - Ta
Allowable power dissipation, Pd max - mW
1000
6.5
0.5
6.4
13
4.4
24
12
1
0.5
0.15
0.22
1.2max
800
600
480
400
200
0
-20
0.08
(1.0)
(0.5)
Specified Board: 30×50×1.6mm3
glass epoxy board.
0
20
40
60
75 80
100
Ambient temperature, Ta - °C
SANYO : TSSOP24(225mil)
EN2
IN1
IN2
IN3
IN4
EXTRA
SGND
C2L
C2H
C1L
C1H
VCC
Pin Assignment
24
23
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
EN1
VM2
NC
PGND
OUT4
OUT3
OUT2
OUT1
PGND
NC
VM1
VG
LV8014T
Top view
No. A1134-3/6
LV8014T
Block Diagram
C2H 16
12 VG
OSC,CHARGE_PUMP
C2L 17
C1H 14
Low-voltage
thermal
protection
C1L 15
11 VM1
8 OUT1
VCC 13
H
BRIDGE1
EN1 1
EN2 24
7 OUT2
4 P-GND
LEVEL
SHIFT
IN1 23
2 VM2
CMOS
LOGIC
IN2 22
6 OUT3
IN3 21
H
BRIDGE2
IN4 20
EXTRA 19
5 OUT4
9 P-GND
18 SGND
Truth table
EXTRA
L
H
EN1
IN1
IN2
OUT1
OUT2
Circuit of
(EN2)
(IN3)
(IN4)
(OUT3)
(OUT4)
Charge Pump
H
H
H
Z
Z
ON
H
L
L
H
Reverse
Forward
Mode
Standby
L
H
H
L
L
L
L
L
L
-
-
L
L
OFF
Standby
H
H
-
L
H
ON
Reverse
L
-
H
L
Forward
-
-
L
L
Brake
L
Brake
- : Don’t care Z : High-Impedance
* Current drain becomes zero in the standby mode.
* The output side becomes OFF, with motor drive stopped, during voltage reduction and thermal protection.
No. A1134-4/6
LV8014T
Pin Functions
Pin No.
Pin name
15
C1L
17
C2L
14
C1H
16
C2H
Function
Equivalent Circuit
Voltage raising capacitor connection pin
VCC
Voltage raising capacitor connection pin
VG
C1H
C2H
23
IN1
22
IN2
21
IN3
Driver output changeover
20
IN4
19
EXTRA
1
EN1
Logic enable pin
24
EN2
TOUT output control pin
VCC
VCC
(Pull-down resistor incorporated)
200kΩ
8
OUT1
7
OUT2
6
OUT3
5
Driver output pin
VM
OUT4
PGND
OUT
OUT
PGND
2
VM2
11
VM1
13
VCC
12
VG
Motor power supply
Logic power supply
Driver drive circuit power supply
VG
C2H
0.1μF
0.01μF
C2L
18
SGND
Logic GND
9
PGND
Driver GND
4
PGND
(both terminals to be connected)
.
No. A1134-5/6
LV8014T
Sample Application Circuit
1.0 to 6.5V
VG
C2L
0.1μF
0.01μF
8.5 to 10.5V
C2H
VM1
0.01μF
2.7 to 5.5V
*1
C1H
C1L
OUT1
VCC
OUT2
EN1
PGND
EN2
IN1
OUT3
IN2
OUT4
IN3
PGND
IN4
VM2
M
CPU
*1
SGND
EXTRA
*1 : Connect a kickback absorption capacitor directly near IC. Coil kickback may cause rise of the voltage of VM line, and
the voltage exceeding the maximum rating may be applied momentarily, resulting in deterioration or damage of IC.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1134-6/6