MCH3476 Ordering number : ENA1952 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3476 General-Purpose Switching Device Applications Features • • 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Gate-to-Source Voltage Drain Current (DC) 20 ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) V ±12 V 2 A 8 A 0.8 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 2.0 0.25 Unit VDSS VGSS Packing Type : TL Marking 1.6 2 TL 0.3 Electrical Connection 0.07 0.85 0.25 1 0.65 FH LOT No. 0 t o 0.02 LOT No. 2.1 3 3 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 1 2 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002601 No. A1952-1/4 MCH3476 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=1A, VGS=4.5V 93 125 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 135 190 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 200 310 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 128 pF Output Capacitance Coss VDS=10V, f=1MHz 28 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 21 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.1 ns Rise Time tr See specified Test Circuit. 11 ns Turn-OFF Delay Time See specified Test Circuit. 14.5 ns Fall Time td(off) tf See specified Test Circuit. 12 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=2A 1.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=2A 0.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=2A 0.55 Diode Forward Voltage VSD IS=2A, VGS=0V 0.85 Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 20 V 0.4 1 μA ±10 μA 1.3 VDS=10V, ID=1A V 1.9 S nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G MCH3476 P.G 50Ω ID -- VDS 1.8 V 2.5V 4.5V ID -- VGS VDS=10V 2.0 0.5 VGS=1.2V °C 1.0 --25 1.0 1.5 75 °C 1.5V Ta = Drain Current, ID -- A 1.5 2.5 Ta=25°C 8.0V 6.0V 2.0 0.5 25° C Drain Current, ID -- A S 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT16372 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT16373 No. A1952-2/4 MCH3476 RDS(on) -- VGS ID=0.3A 0.5A 1A 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 C 5° --2 C = Ta 75° °C 25 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 3 2 100 7 5 tf td(off) 10 7 5 tr td(on) 0 20 40 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 7 5 3 2 0 0.2 0.4 0.6 Ciss, Coss, Crss -- VDS f=1MHz Ciss 7 5 Coss Crss 3 Drain Current, ID -- A 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 4 1.6 1.8 2.0 IT16380 6 8 10 12 14 16 ASO 1m ID=2A 2 20 IT16379 s 10 DC 18 10 0μ s IDP=8A (PW≤10μs) ms 10 0m s op era tio n 3 3 2 0.8 2 1.0 7 5 0.5 0.6 0 Drain-to-Source Voltage, VDS -- V 1.0 0.4 1.2 IT16377 100 0.1 7 5 0.2 1.0 2 2 0 0.8 3 3 1.5 160 IT16642 0.1 7 5 3 2 10 3.5 2.0 140 1.0 7 5 3 2 10 7 5 2.5 120 5 5 7 10 3.0 100 7 VDS=10V ID=2A 4.0 80 VGS=0V IT16644 VGS -- Qg 4.5 60 IS -- VSD 2 1.0 0.01 Gate-to-Source Voltage, VGS -- V --20 1000 3 2 0 --40 Diode Forward Voltage, VSD -- V VDD=10V VGS=4.5V 3 2 50 0.001 5 7 10 IT16643 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 100 10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 7 150 Ambient Temperature, Ta -- °C 5 1.0 200 0 --60 10 VDS=10V 7 0.3A , I D= 1.8V = VGS .5A I =0 2.5V, D = VGS =1.0A 4.5V, I D V GS= 250 IT16641 | yfs | -- ID 10 300 5°C 25°C --25° C 300 350 Ta= 7 350 RDS(on) -- Ta 400 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16381 No. A1952-3/4 MCH3476 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16382 Note on usage : Since the MCH3476 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1952-4/4