MCH6122 Ordering number : ENA1287 SANYO Semiconductors DATA SHEET MCH6122 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier Applications • Relay drivers, lamp drivers, motor drivers, charger circuit. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO -30 V -30 V VEBO IC -5 V -3 A ICP IB Junction Temperature PC Tj Storage Temperature Tstg -5 -600 When mounted on ceramic substrate (600mm2×0.8mm) A mA 1 W 150 °C -55 to +150 °C Marking : AY Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O0808EA TI IM TC-00001607 No. A1287-1/4 MCH6122 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO IECO Emitter Cutoff Current Collector Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-On Time Storage Time VEC= -4.5V, IB=0A VCE= -2V, IC= -500mA VCE(sat)1 VCB= -10V, f=1MHz IC= -1.5A, IB= -30mA VCE(sat)2 VBE(sat) V(BR)CBO 200 -120 -180 mV -0.83 -1.2 IC= -10μA, IE=0A IC= -1mA, RBE=∞ IE= -10μA, IC=0A See specified Test Circuit. 0.25 V -30 V See specified Test Circuit. 270 ns 27 ns IB1 OUTPUT IB2 VR 50Ω RB + 24Ω + 470μF 3 VBE=5V 2 3 6 5 4 SANYO : MCPH6 VCE= --2V --10mA --2.5 Collector Current, IC -- A --50m A --8mA --6mA --1.2 --4mA --1.0 --0.8 --2mA --0.6 IC -- VBE --3.0 --0.4 --2.0 --1.5 C 25°C --25°C 0m A mA 0 --2 --3 VCC= --12V --20IB1=20IB2=IC=--500mA Ta=75 ° 0.85 0.3 1 mA ns See specified Test Circuit. INPUT 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector --4 0 V 50 Switching Time Test Circuit 2.1 1.6 0.25 V -30 -5 4 0.65 0.07 Collector Current, IC -- A --1.4 pF IC= -1.5A, IB= -30mA IC -- VCE --1.6 MHz IC= -1.5A, IB= -75mA 0.15 --2.0 --1.8 μA 560 mV 100μF 2 μA -1 -270 0 t o 0.02 1 μA -0.1 25 PW=20μs D.C.≤1% 5 -0.1 400 unit : mm (typ) 7022A-007 6 Unit max -180 Package Dimensions 2.0 typ VCE= -10V, IC= -500mA tstg tf Fall Time min VCB= -30V, IE=0A VEB= -4V, IC=0A V(BR)CEO V(BR)EBO ton Emitter-to-Base Breakdown Voltage Ratings Conditions --1.0 --0.5 --0.2 0 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V --0.9 --1.0 IT04554 0 0 --0.2 --0.4 --0.6 --0.8 Bass-to-Emitter Voltage, VBE -- V --1.0 IT04555 No. A1287-2/4 MCH6122 hFE -- IC 5 Ta=75°C 3 25°C --25°C 2 Gain-Bandwidth Product, FT -- MHz DC Current Gain, hFE 7 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Cob -- VCB 100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 7 2 --10 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 7 5 3 2 C 25° C 75° Ta= 5°C --2 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 op io at er --1.0 7 5 μs s s 1m 500 s s m 0m n 25 a= (T ) °C 3 2 --0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 7 --1.0 2 3 5 IT04557 2 C 5° =7 a T C 5° --2 --100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IT04559 VBE(sat) -- IC IC / IB=50 --1.0 °C Ta= --25 ° 5 2 C 75°C 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 IT04561 PC -- Ta When mounted on ceramic substrate (600mm2×0.8mm) 100μ 10 10 5 3 <10μs C Collector Current, IC -- A ICP= --5A IC= --3A 3 5 1.2 D 3 2 ASO 2 IC / IB=20 5 --0.01 5 7 --10 IT04560 Collector Current, IC -- A --10 7 5 7 --0.1 Collector Current, IC -- A Collector Dissipation, PC -- W --10 --0.01 5 2 --1000 7 5 3 IT04558 IC / IB=50 --100 2 VCB(sat) -- IC --10 --0.01 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 100 7 5 3 2 --1000 7 2 3 Collector Current, IC -- A f=1MHz 10 --1.0 VCE= --10V 7 --0.01 5 7 --10 IT04556 Collector Current, IC -- A fT -- IC 5 VCE= --2V 25 °C 1000 5 IT13916 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13915 No. A1287-3/4 MCH6122 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1287-4/4